Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange
- Journal
- ACS Nano
In The Last Decade
doi.org/10.1021/nn500897c →Countries where authors are citing Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange
This map shows the geographic impact of Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange more than expected).
Fields of papers citing Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange
This network shows the impact of Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange.
About Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange
This paper, published in 2014, received 905 indexed citations . Written by Patrick R. Brown, Dong-Hun Kim, Richard R. Lunt, Ni Zhao, Moungi G. Bawendi, Jeffrey C. Grossman and Vladimir Bulović covering the research area of Materials Chemistry and Electrical and Electronic Engineering. It is primarily cited by scholars working on Materials Chemistry (843 citations), Electrical and Electronic Engineering (736 citations) and Renewable Energy, Sustainability and the Environment (84 citations). Published in ACS Nano.
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This paper is also available at doi.org/10.1021/nn500897c.