Zhiyou Guo

681 total citations
64 papers, 550 citations indexed

About

Zhiyou Guo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Zhiyou Guo has authored 64 papers receiving a total of 550 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Condensed Matter Physics, 32 papers in Electronic, Optical and Magnetic Materials and 26 papers in Electrical and Electronic Engineering. Recurrent topics in Zhiyou Guo's work include GaN-based semiconductor devices and materials (53 papers), Ga2O3 and related materials (31 papers) and Photocathodes and Microchannel Plates (20 papers). Zhiyou Guo is often cited by papers focused on GaN-based semiconductor devices and materials (53 papers), Ga2O3 and related materials (31 papers) and Photocathodes and Microchannel Plates (20 papers). Zhiyou Guo collaborates with scholars based in China, Slovakia and Japan. Zhiyou Guo's co-authors include Huiqing Sun, Hao Sun, Bei Deng, Xiaoqi Gao, Dan Xiang, Jie Sun, Xin Wang, Xiaojun Wang, Yuan Li and Huazhi Li and has published in prestigious journals such as Applied Physics Letters, Optics Express and IEEE Access.

In The Last Decade

Zhiyou Guo

61 papers receiving 504 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhiyou Guo China 13 390 267 216 213 188 64 550
Jiamang Che China 12 487 1.2× 351 1.3× 205 0.9× 167 0.8× 206 1.1× 24 552
Izak Baranowski United States 11 342 0.9× 235 0.9× 112 0.5× 343 1.6× 76 0.4× 16 487
Greeshma Chandan India 12 227 0.6× 210 0.8× 218 1.0× 197 0.9× 135 0.7× 18 442
Nikholas G. Toledo United States 8 385 1.0× 179 0.7× 143 0.7× 211 1.0× 164 0.9× 11 501
Liancheng Wang Singapore 10 285 0.7× 159 0.6× 196 0.9× 106 0.5× 136 0.7× 12 380
Chieh Hsieh Taiwan 14 390 1.0× 252 0.9× 276 1.3× 137 0.6× 252 1.3× 38 552
T.K. Ko Taiwan 14 468 1.2× 236 0.9× 263 1.2× 262 1.2× 110 0.6× 34 561
Charng-Gan Tu Taiwan 14 326 0.8× 246 0.9× 271 1.3× 129 0.6× 203 1.1× 34 474
An-Jye Tzou Taiwan 14 394 1.0× 179 0.7× 246 1.1× 335 1.6× 84 0.4× 32 571
Chia-Ying Su Taiwan 14 305 0.8× 237 0.9× 258 1.2× 111 0.5× 191 1.0× 28 440

Countries citing papers authored by Zhiyou Guo

Since Specialization
Citations

This map shows the geographic impact of Zhiyou Guo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhiyou Guo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhiyou Guo more than expected).

Fields of papers citing papers by Zhiyou Guo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhiyou Guo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhiyou Guo. The network helps show where Zhiyou Guo may publish in the future.

Co-authorship network of co-authors of Zhiyou Guo

This figure shows the co-authorship network connecting the top 25 collaborators of Zhiyou Guo. A scholar is included among the top collaborators of Zhiyou Guo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhiyou Guo. Zhiyou Guo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Longfei, Huiqing Sun, Yuanhao Zhang, et al.. (2024). NPDC structure double-channel N-polar E-mode GaN HEMTs: Innovations in enhancing RF and DC performance and mitigating trap effects. Microelectronics Journal. 154. 106461–106461. 4 indexed citations
2.
3.
Li, Yuan, et al.. (2023). Study of GaN/AlGaN air structure gate HEMTs with high linearity for RF applications. AEU - International Journal of Electronics and Communications. 161. 154526–154526. 3 indexed citations
4.
Ding, Xiao, Yuan Li, Fan Xia, et al.. (2021). Novel gate air cavity GaN HEMTs design for improved RF and DC performance. Results in Physics. 29. 104718–104718. 4 indexed citations
5.
Zhang, Miao, et al.. (2021). Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance. IEEE Access. 9. 9895–9902. 14 indexed citations
6.
Zhang, Hewei, et al.. (2019). Fiber-based unidirectional emission with enhanced extraction efficiency of a single quantum dot from an optimized structure. Optics Communications. 455. 124480–124480. 3 indexed citations
7.
Sun, Huiqing, Zhifu Li, Jie Sun, et al.. (2018). [INVITED] Special AlGaN graded superlattice hole and electron blocking layers improved performance of AlGaN-based ultraviolet light-emitting diodes. Optics & Laser Technology. 106. 469–473. 9 indexed citations
8.
Guo, Zhiyou, et al.. (2018). Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer. Optics Communications. 433. 236–241. 21 indexed citations
9.
Wang, Xin, Huiqing Sun, Xian Yang, et al.. (2018). Performance enhancement of AlGaN-based UV-LEDs inserted with a pin-doped AlGaN layer between the active region and electron-blocking layer. Materials Science in Semiconductor Processing. 83. 133–138. 9 indexed citations
10.
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12.
Sun, Huiqing, Huiqing Sun, Hao Sun, et al.. (2015). Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer. Superlattices and Microstructures. 88. 467–473. 50 indexed citations
13.
Sun, Huiqing, Huiqing Sun, Huan Zheng, et al.. (2015). Investigation of the dual-wavelength light-emitting diodes with AlInGaN spectral adjustment layer based on the Al/In ratios. Superlattices and Microstructures. 83. 176–183. 1 indexed citations
14.
Sun, Huiqing, et al.. (2015). Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region. Journal of Display Technology. 12(6). 573–576. 8 indexed citations
15.
Zheng, Huan, et al.. (2015). Effect of Polarization Field and Nonradiative Recombination Lifetime on the Performance Improvement of Step Stage InGaN/GaN Multiple Quantum Well LEDs. Journal of Display Technology. 11(9). 776–782. 8 indexed citations
16.
Yang, Bin, Zhiyou Guo, Nan Xie, et al.. (2014). A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED. Chinese Physics B. 23(4). 48502–48502. 5 indexed citations
17.
Guo, Zhiyou, et al.. (2013). Proposal of a wavelength filter with a cut corner based on Equilateral-Triangle-Resonator. Optics Express. 21(14). 16536–16536. 2 indexed citations
18.
Guo, Zhiyou, et al.. (2012). The preparation and performance analysis of GaN-based high-voltage DC light emitting diode. Acta Physica Sinica. 61(13). 138502–138502. 2 indexed citations
19.
Gao, Xiaoqi, Zhiyou Guo, Yufei Zhang, & Dongxing Cao. (2010). The Electronic Structure and Optical Properties of Al-N Codoped ZnO. Chinese Journal of Luminescence. 31(4). 509–514. 3 indexed citations
20.
Zhang, Yufei, et al.. (2010). First-principles of wurtzite ZnO (0001) and (0001) surface structures. Journal of Semiconductors. 31(8). 82001–82001. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026