Zengli Huang

888 total citations
48 papers, 695 citations indexed

About

Zengli Huang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zengli Huang has authored 48 papers receiving a total of 695 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zengli Huang's work include GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (13 papers). Zengli Huang is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (13 papers). Zengli Huang collaborates with scholars based in China, Taiwan and India. Zengli Huang's co-authors include Zhenghui Liu, Rong Huang, Fangsen Li, Tong Liu, Ke Xu, Yanfei Zhao, Kai Zhang, Gengzhao Xu, Zhongming Zeng and Xinyao Shi and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Zengli Huang

46 papers receiving 675 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zengli Huang China 14 358 330 264 185 181 48 695
Bao‐Hsien Wu Taiwan 8 306 0.9× 206 0.6× 148 0.6× 117 0.6× 103 0.6× 12 510
Zaibing Guo Singapore 17 770 2.2× 341 1.0× 403 1.5× 119 0.6× 145 0.8× 55 1.1k
Wenzhi Lin United States 15 887 2.5× 413 1.3× 253 1.0× 118 0.6× 154 0.9× 28 1.1k
Jonathan J. P. Peters United Kingdom 13 436 1.2× 233 0.7× 241 0.9× 116 0.6× 58 0.3× 32 666
Ting Zhi China 16 479 1.3× 409 1.2× 347 1.3× 205 1.1× 451 2.5× 94 937
Honglyoul Ju South Korea 14 316 0.9× 387 1.2× 306 1.2× 112 0.6× 92 0.5× 30 741
Philipp M. Leufke Germany 11 213 0.6× 229 0.7× 258 1.0× 188 1.0× 64 0.4× 12 513
F. Cebollada Spain 15 281 0.8× 114 0.3× 447 1.7× 137 0.7× 151 0.8× 76 769
Masashi Akabori Japan 14 313 0.9× 406 1.2× 119 0.5× 221 1.2× 153 0.8× 88 777
Sergey Artyukhin Italy 19 641 1.8× 268 0.8× 650 2.5× 142 0.8× 307 1.7× 35 1.0k

Countries citing papers authored by Zengli Huang

Since Specialization
Citations

This map shows the geographic impact of Zengli Huang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zengli Huang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zengli Huang more than expected).

Fields of papers citing papers by Zengli Huang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zengli Huang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zengli Huang. The network helps show where Zengli Huang may publish in the future.

Co-authorship network of co-authors of Zengli Huang

This figure shows the co-authorship network connecting the top 25 collaborators of Zengli Huang. A scholar is included among the top collaborators of Zengli Huang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zengli Huang. Zengli Huang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhao, Luyu, Ying Yang, Xiaoqin Yang, et al.. (2025). Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. RSC Advances. 15(52). 44541–44547.
2.
Wang, Jin, Jingbo Zhang, Hongwei Gu, et al.. (2025). Compact beam control via non-periodic tantalum pentoxide high contrast gratings in GaN green laser. Journal of Applied Physics. 138(9).
3.
Xing, Yanhui, Guohao Yu, Liang Song, et al.. (2022). Study on H plasma treatment enhanced p-GaN gate AlGaN/GaN HEMT with block layer. Acta Physica Sinica. 71(10). 108501–108501. 2 indexed citations
4.
Chen, Hui, Zhenghui Liu, Yumin Zhang, et al.. (2021). Chemical etching of freestanding N-polar GaN in control of the surface morphology. Applied Surface Science. 580. 152125–152125. 4 indexed citations
5.
Tang, Yongjun, Meixin Feng, Jianxun Liu, et al.. (2021). Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings. Nanomaterials. 11(11). 3092–3092. 3 indexed citations
6.
Zhou, Rui, Meixin Feng, Jin Wang, et al.. (2020). InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100). ACS Photonics. 7(10). 2636–2642. 9 indexed citations
7.
Ding, Jie, Xiaohong Chen, Tao Zhang, et al.. (2020). Interdigital Structure Enhanced the Current Spreading and Light Output Power of GaN-Based Light Emitting Diodes. IEEE Access. 8. 105972–105979. 1 indexed citations
8.
Xu, Yi‐Jun, Xinyao Shi, Yushuang Zhang, et al.. (2020). Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon. Nature Communications. 11(1). 1330–1330. 156 indexed citations
9.
Liu, Jianxun, Jin Wang, Xiujian Sun, et al.. (2019). InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si. ACS Photonics. 6(8). 2104–2109. 11 indexed citations
10.
Zhao, Yanfei, Hongwei Gao, Rong Huang, et al.. (2019). Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy. Scientific Reports. 9(1). 16969–16969. 23 indexed citations
11.
Li, Lei, Xin Fang, Hui Zhao, et al.. (2018). Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion. Journal of Materials Engineering and Performance. 28(1). 162–168. 3 indexed citations
12.
Huang, Rong, Fangsen Li, Tong Liu, et al.. (2018). Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System. Scientific Reports. 8(1). 8521–8521. 6 indexed citations
13.
Zhao, Yanfei, Hu Wang, Wei Zhang, et al.. (2017). Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching. Journal of Micromechanics and Microengineering. 27(11). 115004–115004. 9 indexed citations
14.
Xu, Ke, Zhenghui Liu, Gengzhao Xu, et al.. (2017). Ultraviolet photoresponse of surface acoustic wave device based on Fe-doped high-resistivity GaN. Japanese Journal of Applied Physics. 56(5). 50307–50307. 3 indexed citations
15.
Zhong, Haijian, Zhenghui Liu, Lin Shi, et al.. (2014). Graphene in ohmic contact for both n-GaN and p-GaN. Applied Physics Letters. 104(21). 24 indexed citations
16.
Huang, Zengli, Jianfeng Wang, Zhenghui Liu, et al.. (2014). Nanoscale active hybrid plasmonic laser with a metal-clad metal–insulator–semiconductor square resonator. Journal of the Optical Society of America B. 31(7). 1422–1422. 6 indexed citations
17.
Huang, Zengli, W. Y. Weng, Shoou‐Jinn Chang, et al.. (2011). GaN Schottky Barrier Photodetectors With a Lattice-Matched ${\rm Al}_{0.82}{\rm In}_{0.18}{\rm N}$ Intermediate Layer. IEEE Sensors Journal. 11(11). 2895–2901. 2 indexed citations
18.
Weng, W. Y., Ting‐Jen Hsueh, Shoou‐Jinn Chang, et al.. (2011). An ${({\rm Al}_{\rm x}{\rm Ga}_{1-{\rm x}})}_{2}{\rm O}_{3}$ Metal-Semiconductor-Metal VUV Photodetector. IEEE Sensors Journal. 11(9). 1795–1799. 16 indexed citations
19.
Huang, Zengli, Jianfeng Wang, Zhenghui Liu, et al.. (2010). Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity. Applied Physics Express. 3(7). 72001–72001. 6 indexed citations
20.
Zhang, Guiju, Chinhua Wang, Bing Cao, et al.. (2010). Polarized GaN-based LED with an integrated multi-layer subwavelength structure. Optics Express. 18(7). 7019–7019. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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