Yusuke Hoshi

2.3k total citations · 1 hit paper
86 papers, 1.7k citations indexed

About

Yusuke Hoshi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Yusuke Hoshi has authored 86 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 41 papers in Atomic and Molecular Physics, and Optics and 35 papers in Materials Chemistry. Recurrent topics in Yusuke Hoshi's work include Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Nanowire Synthesis and Applications (20 papers). Yusuke Hoshi is often cited by papers focused on Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Nanowire Synthesis and Applications (20 papers). Yusuke Hoshi collaborates with scholars based in Japan, United States and France. Yusuke Hoshi's co-authors include Noritaka Usami, Kentarou Sawano, Kohei M. Itoh, Takeshi Tayagaki, Kenta Takeda, Tomohiro Otsuka, Matthieu R. Delbecq, Seigo Tarucha, Giles Allison and Takashi Nakajima and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Yusuke Hoshi

79 papers receiving 1.7k citations

Hit Papers

A quantum-dot spin qubit with coherence limited by charge... 2017 2026 2020 2023 2017 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yusuke Hoshi Japan 17 1.1k 988 598 264 213 86 1.7k
Kenji Toyoda Japan 19 648 0.6× 333 0.3× 437 0.7× 322 1.2× 137 0.6× 82 1.2k
Jun Cheng China 15 705 0.6× 460 0.5× 588 1.0× 245 0.9× 75 0.4× 48 1.4k
Kenjiro Hashi Japan 17 257 0.2× 486 0.5× 322 0.5× 30 0.1× 230 1.1× 111 1.2k
Karim Hassan France 23 613 0.6× 1.0k 1.0× 219 0.4× 97 0.4× 468 2.2× 103 1.5k
Sangkyung Lee South Korea 16 232 0.2× 485 0.5× 280 0.5× 32 0.1× 92 0.4× 56 966
J. Zhou China 13 209 0.2× 546 0.6× 397 0.7× 20 0.1× 30 0.1× 36 1.3k
Yajun Gao China 22 673 0.6× 669 0.7× 541 0.9× 612 2.3× 56 0.3× 74 1.5k
Thomas Brumme Germany 15 531 0.5× 697 0.7× 789 1.3× 7 0.0× 208 1.0× 33 1.2k
Mathias Jørgensen Denmark 16 65 0.1× 175 0.2× 595 1.0× 26 0.1× 37 0.2× 22 728
K. K. Bardhan India 16 170 0.2× 279 0.3× 392 0.7× 21 0.1× 126 0.6× 36 717

Countries citing papers authored by Yusuke Hoshi

Since Specialization
Citations

This map shows the geographic impact of Yusuke Hoshi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yusuke Hoshi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yusuke Hoshi more than expected).

Fields of papers citing papers by Yusuke Hoshi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yusuke Hoshi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yusuke Hoshi. The network helps show where Yusuke Hoshi may publish in the future.

Co-authorship network of co-authors of Yusuke Hoshi

This figure shows the co-authorship network connecting the top 25 collaborators of Yusuke Hoshi. A scholar is included among the top collaborators of Yusuke Hoshi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yusuke Hoshi. Yusuke Hoshi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
3.
Watanabe, Kenji, et al.. (2024). Effect of Environmental Conditions on the Electrical Properties of MoTe2 Monolayers with hBN Cap Layer. ECS Meeting Abstracts. MA2024-02(32). 2338–2338.
5.
Hoshi, Yusuke, et al.. (2021). Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing. Applied Physics Express. 14(4). 45504–45504. 2 indexed citations
6.
Yoneda, Jun, Kenta Takeda, Tomohiro Otsuka, et al.. (2017). A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nature Nanotechnology. 13(2). 102–106. 558 indexed citations breakdown →
7.
Hoshi, Yusuke, Keisuke Arimoto, Junji Yamanaka, et al.. (2016). Compressively strained Si/Si1− xCx heterostructures formed on Ar ion implanted Si(100) substrates. Japanese Journal of Applied Physics. 55(3). 31302–31302. 1 indexed citations
9.
Sawano, Kentarou, Yusuke Hoshi, Shoichi Kubo, et al.. (2015). Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator. Thin Solid Films. 613. 24–28. 35 indexed citations
10.
Moriya, Rai, Kentarou Sawano, Yusuke Hoshi, et al.. (2014). 歪んだGe/SiGe量子井戸中の二次元正孔ガス立方Rashbaスピン-軌道相互作用. Physical Review Letters. 113(8). 1–86601. 10 indexed citations
11.
Moriya, Rai, Kentarou Sawano, Yusuke Hoshi, et al.. (2014). Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGeQuantum Well. Physical Review Letters. 113(8). 86601–86601. 106 indexed citations
12.
Portal, J.C., Devin K. Brown, Thomas Beck, et al.. (2014). Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves. Science and Technology of Advanced Materials. 15(4). 45005–45005. 1 indexed citations
13.
Ishizaki, Manabu, Akira Ohtani, Yusuke Hoshi, et al.. (2013). Proton-exchange mechanism of specific Cs+ adsorption via lattice defect sites of Prussian blue filled with coordination and crystallization water molecules. Dalton Transactions. 42(45). 16049–16049. 203 indexed citations
14.
Tayagaki, Takeshi, et al.. (2013). Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells. Thin Solid Films. 557. 368–371. 10 indexed citations
15.
Usami, Noritaka, Wugen Pan, Takeshi Tayagaki, et al.. (2012). Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals. Nanotechnology. 23(18). 185401–185401. 28 indexed citations
16.
Tanaka, Takahisa, Yusuke Hoshi, Kentarou Sawano, Y. Shiraki, & Kohei M. Itoh. (2012). Upper Limit of Two-Dimensional Hole Gas Mobility in Ge/SiGe Heterostructures. 1–2. 1 indexed citations
17.
Tayagaki, Takeshi, Noritaka Usami, Wugen Pan, Yusuke Hoshi, & Yoshihiko Kanemitsu. (2012). Enhanced carrier extraction under strong light irradiation in Ge/Si type-II quantum dot solar cells. 79. 3200–3203. 1 indexed citations
18.
Hoshi, Yusuke, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, & Y. Shiraki. (2011). Formation of Tensilely Strained Germanium-on-Insulator. Applied Physics Express. 5(1). 15701–15701. 23 indexed citations
19.
Ando, Yuichiro, Kenji Kasahara, S. Yamada, et al.. (2011). Electric-field control of spin accumulation signals in silicon at room temperature. Applied Physics Letters. 99(13). 49 indexed citations
20.
Miyazaki, Hiroyuki, et al.. (2009). Synthesizing of Yttria-silica Additives by Sol-gel Method for Multi Layered Ceramic Capacitor Device. Journal of the Society of Powder Technology Japan. 46(2). 86–89. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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