Yunpeng Jia

704 total citations
51 papers, 503 citations indexed

About

Yunpeng Jia is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yunpeng Jia has authored 51 papers receiving a total of 503 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 7 papers in Condensed Matter Physics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yunpeng Jia's work include Silicon Carbide Semiconductor Technologies (27 papers), Semiconductor materials and devices (24 papers) and Radiation Effects in Electronics (17 papers). Yunpeng Jia is often cited by papers focused on Silicon Carbide Semiconductor Technologies (27 papers), Semiconductor materials and devices (24 papers) and Radiation Effects in Electronics (17 papers). Yunpeng Jia collaborates with scholars based in China, United States and Italy. Yunpeng Jia's co-authors include Dongqing Hu, Yu Wu, Xintian Zhou, Yuanfu Zhao, Yun Tang, Yuan Li, Jia Guo, Lorenzo Mucchi, Romano Fantacci and Yamin Zhang and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Transactions on Electron Devices and Astronomy and Astrophysics.

In The Last Decade

Yunpeng Jia

44 papers receiving 488 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yunpeng Jia China 13 439 48 37 26 22 51 503
Surya Prakash Singh India 11 312 0.7× 28 0.6× 29 0.8× 35 1.3× 17 0.8× 43 382
Z.N. Low United States 7 390 0.9× 68 1.4× 13 0.4× 10 0.4× 51 2.3× 9 431
Jaewon Choi South Korea 11 270 0.6× 8 0.2× 21 0.6× 52 2.0× 10 0.5× 40 333
Yu-Hsuan Lin Taiwan 16 609 1.4× 40 0.8× 30 0.8× 18 0.7× 13 0.6× 48 686
J. A. Reynoso‐Hernández Mexico 13 656 1.5× 127 2.6× 66 1.8× 13 0.5× 33 1.5× 84 693
Jian Lu Singapore 12 429 1.0× 11 0.2× 33 0.9× 30 1.2× 8 0.4× 38 494
Jusung Kim South Korea 11 562 1.3× 34 0.7× 36 1.0× 10 0.4× 6 0.3× 55 609
Yohtaro Umeda Japan 9 448 1.0× 30 0.6× 158 4.3× 5 0.2× 17 0.8× 66 462
Victor Liang Taiwan 10 279 0.6× 16 0.3× 21 0.6× 8 0.3× 21 1.0× 34 328

Countries citing papers authored by Yunpeng Jia

Since Specialization
Citations

This map shows the geographic impact of Yunpeng Jia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yunpeng Jia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yunpeng Jia more than expected).

Fields of papers citing papers by Yunpeng Jia

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yunpeng Jia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yunpeng Jia. The network helps show where Yunpeng Jia may publish in the future.

Co-authorship network of co-authors of Yunpeng Jia

This figure shows the co-authorship network connecting the top 25 collaborators of Yunpeng Jia. A scholar is included among the top collaborators of Yunpeng Jia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yunpeng Jia. Yunpeng Jia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tang, Yun, Xintian Zhou, Mingwei Li, et al.. (2024). Comparison of Proton Irradiation Effects on Electrical Properties of Quasi-Vertical and Lateral GaN Schottky Barrier Diodes. IEEE Transactions on Nuclear Science. 72(1). 17–23.
2.
Jia, Yunpeng, et al.. (2024). Neutron Irradiation Induced Single-Event Burnout of IGBT. 385–390.
3.
Hu, Dongqing, et al.. (2023). Simulation Study on SEB Resistance of Silicon-based RESURF LDMOS Device with Drain Buffer Layer. 37. 198–205. 1 indexed citations
4.
Zhou, Xintian, Mingwei Li, Yunpeng Jia, et al.. (2023). SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness. IEEE Transactions on Electron Devices. 70(11). 5786–5794. 9 indexed citations
5.
Li, Yuan, Xintian Zhou, Yuanfu Zhao, et al.. (2022). Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests. IEEE Transactions on Electron Devices. 69(5). 2521–2527. 20 indexed citations
6.
Wang, Lihao, Yunpeng Jia, Xintian Zhou, et al.. (2022). Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress. Microelectronics Reliability. 133. 114545–114545. 3 indexed citations
7.
Jia, Yunpeng, Xintian Zhou, Yuanfu Zhao, et al.. (2021). SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness. Japanese Journal of Applied Physics. 60(12). 124005–124005. 3 indexed citations
8.
Jia, Yunpeng, Xintian Zhou, Yuanfu Zhao, et al.. (2021). A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode. IEEE Journal of the Electron Devices Society. 9. 839–845. 3 indexed citations
9.
Zhou, Xintian, Yunpeng Jia, Dongqing Hu, et al.. (2021). Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike. IEEE Transactions on Electron Devices. 68(8). 4010–4015. 24 indexed citations
10.
Zhou, Xintian, Yunpeng Jia, Dongqing Hu, et al.. (2020). SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode. IEEE Transactions on Electron Devices. 67(2). 582–587. 43 indexed citations
11.
Hu, Dongqing, et al.. (2020). Short-circuit Failure Mechanism of SiC Double-trench MOSFET. 2020 IEEE 5th Information Technology and Mechatronics Engineering Conference (ITOEC). 691–694. 2 indexed citations
12.
Zhou, Xintian, Yunpeng Jia, Dongqing Hu, & Yu Wu. (2019). A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility. IEEE Transactions on Electron Devices. 66(6). 2551–2556. 79 indexed citations
13.
Jia, Yunpeng, Xintian Zhou, Yuanfu Zhao, et al.. (2019). Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking. IEEE Electron Device Letters. 41(2). 216–219. 22 indexed citations
14.
Zhou, Xintian, et al.. (2019). Single-Event Effects in SiC Double-Trench MOSFETs. IEEE Transactions on Nuclear Science. 66(11). 2312–2318. 42 indexed citations
15.
Hu, Dongqing, Jingwei Zhang, Yunpeng Jia, & Yu Wu. (2018). Radiation and annealing effects of SiC MOSFETs at high voltage gate bias. European Conference on Power Electronics and Applications. 1 indexed citations
16.
Hu, Dongqing, et al.. (2018). Impact of Different Gate Biases on Irradiation and Annealing Responses of SiC MOSFETs. IEEE Transactions on Electron Devices. 65(9). 3719–3724. 47 indexed citations
17.
Hu, Dongqing, et al.. (2017). Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress. IEEE Transactions on Nuclear Science. 64(10). 2633–2638. 11 indexed citations
18.
Liu, Jianghong, et al.. (2013). Biochemical Treatment of Wastewater Containing Partially Hydrolyzed Polyacrylamide. Asian Journal of Chemistry. 25(12). 6939–6942. 4 indexed citations
19.
Nakano, Hiroshi, et al.. (2011). Mashup approach for embedding algebraic manipulations, formulas and graphs in web pages. 691–694. 1 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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