Yanning Sun

1.2k total citations · 1 hit paper
15 papers, 932 citations indexed

About

Yanning Sun is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Yanning Sun has authored 15 papers receiving a total of 932 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in Yanning Sun's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Graphene research and applications (4 papers). Yanning Sun is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Graphene research and applications (4 papers). Yanning Sun collaborates with scholars based in United States and Switzerland. Yanning Sun's co-authors include Shu‐Jen Han, Alberto Valdes‐Garcia, Yu-Ming Lin, K.A. Jenkins, A. Grill, Christos Dimitrakopoulos, Inanc Meric, Phaedon Avouris, Yanqing Wu and Damon B. Farmer and has published in prestigious journals such as Science, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Yanning Sun

15 papers receiving 902 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Wafer-Scale Graphene Integrated Circuit

2011 702 citations Yu-Ming Lin, Alberto Valdes‐Garcia et al. Science profile →

Peers

Yanning Sun

MC

EEE

AMPO

BE

EOMM

Dongjea Seo South Korea

Chris M. Corbet United States

Jens Baringhaus Germany

Ivy Razado-Colambo France

Wanlong Guo China

Kimberly Sablon United States

A. J. M. Giesbers Netherlands

John J. Plombon United States

Mitsuhisa Ikeda Japan

Nicolas Leconte South Korea

Dongjea Seo South Korea

Yanning Sun

622 ×0.9

MC

360 ×0.6

EEE

219 ×0.8

AMPO

207 ×0.9

BE

92 ×1.1

EOMM

Citations per year, relative to Yanning Sun Yanning Sun (= 1×) peers Dongjea Seo

Countries citing papers authored by Yanning Sun

Since Specialization

Citations

This map shows the geographic impact of Yanning Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yanning Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yanning Sun more than expected).

Fields of papers citing papers by Yanning Sun

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yanning Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yanning Sun. The network helps show where Yanning Sun may publish in the future.

Co-authorship network of co-authors of Yanning Sun

This figure shows the co-authorship network connecting the top 25 collaborators of Yanning Sun. A scholar is included among the top collaborators of Yanning Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yanning Sun. Yanning Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

15 of 15 papers shown

1.

Majumdar, Amlan, Yanning Sun, Cheng‐Wei Cheng, et al.. (2014). CMOS-Compatible Self-Aligned In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Gate Lengths Down to 30 nm. IEEE Transactions on Electron Devices. 61(10). 3399–3404. 6 indexed citations

2.

Han, Shu‐Jen, Zhihong Chen, Ageeth A. Bol, & Yanning Sun. (2011). Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors. IEEE Electron Device Letters. 32(6). 812–814. 60 indexed citations

3.

Lin, Yu-Ming, Alberto Valdes‐Garcia, Shu‐Jen Han, et al.. (2011). Wafer-Scale Graphene Integrated Circuit. Science. 332(6035). 1294–1297. 702 indexed citations breakdown →

4.

Sun, Yanning, et al.. (2010). Improve variability in carbon nanotube FETs by scaling. 4. 283–284. 1 indexed citations

5.

Hopstaken, Marinus, Dirk Pfeiffer, Michael Gordon, et al.. (2010). Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs. ECS Transactions. 28(5). 207–215. 1 indexed citations

6.

Han, Shu‐Jen, Yanning Sun, Ageeth A. Bol, Wilfried Haensch, & Zhihong Chen. (2010). Study of channel length scaling in large-scale graphene FETs. 231–232. 5 indexed citations

7.

Sun, Yanning, E. Kiewra, J. P. de Souza, et al.. (2009). High mobility III–V channel MOSFETs for post-Si CMOS applications. 161–164. 2 indexed citations

8.

Singisetti, Uttam, Mark A. Wistey, Erdem Arkun, et al.. (2009). InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(6). 1394–1398. 28 indexed citations

9.

Sun, Yanning, E. Kiewra, J. P. de Souza, et al.. (2008). Scaling of In<inf>0.7</inf>Ga<inf>0.3</inf>As buried-channel MOSFETs. 1–4. 19 indexed citations

10.

Sun, Yanning, E. Kiewra, J. P. de Souza, et al.. (2008). High Performance Long-and Short-Channel In<inf>0.7</inf>Ga<inf>0.3</inf>As-channel MOSFETs. 637. 41–42. 2 indexed citations

11.

Sun, Yanning, E. Kiewra, J. P. de Souza, et al.. (2007). Enhancement-mode In<inf>0.70</inf>Ga<inf>0.30</inf>As-channel MOSFETs with ALD Al<inf>2</inf>O<inf>3</inf>. 209–210. 3 indexed citations

12.

Sun, Yanning, Steven J. Koester, E. Kiewra, et al.. (2007). Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics. 231–234. 2 indexed citations

13.

Sun, Yanning, E. Kiewra, Steven J. Koester, et al.. (2007). Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics. IEEE Electron Device Letters. 28(6). 473–475. 52 indexed citations

14.

Sun, Yanning, Steven J. Koester, E. Kiewra, et al.. (2006). Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics. 787. 49–50. 4 indexed citations

15.

Koester, Steven J., E. Kiewra, Yanning Sun, et al.. (2006). Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers. Applied Physics Letters. 89(4). 45 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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