Lanxia Cheng

2.5k total citations
38 papers, 2.2k citations indexed

About

Lanxia Cheng is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Lanxia Cheng has authored 38 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Materials Chemistry, 29 papers in Electrical and Electronic Engineering and 6 papers in Biomedical Engineering. Recurrent topics in Lanxia Cheng's work include Semiconductor materials and devices (14 papers), 2D Materials and Applications (12 papers) and Graphene research and applications (7 papers). Lanxia Cheng is often cited by papers focused on Semiconductor materials and devices (14 papers), 2D Materials and Applications (12 papers) and Graphene research and applications (7 papers). Lanxia Cheng collaborates with scholars based in United States, South Korea and Germany. Lanxia Cheng's co-authors include Jiyoung Kim, Robert M. Wallace, Angelica Azcatl, Rafik Addou, Moon J. Kim, Hui Zhu, Xiaoye Qin, Kyeongjae Cho, Antonio T. Lucero and Qingxiao Wang and has published in prestigious journals such as Advanced Materials, Nano Letters and ACS Nano.

In The Last Decade

Lanxia Cheng

38 papers receiving 2.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Lanxia Cheng United States 21 1.9k 1.3k 294 206 200 38 2.2k
Zhen‐Yu Juang Taiwan 16 2.5k 1.4× 974 0.8× 409 1.4× 194 0.9× 222 1.1× 25 2.8k
Wenbing Yang United States 20 1.5k 0.8× 1.9k 1.5× 311 1.1× 120 0.6× 105 0.5× 29 2.1k
Zohreh Ghorannevis Iran 13 2.7k 1.5× 1.7k 1.3× 348 1.2× 323 1.6× 212 1.1× 45 3.0k
Jichen Dong China 24 1.5k 0.8× 777 0.6× 229 0.8× 194 0.9× 307 1.5× 44 1.9k
A. Kanjilal India 25 1.1k 0.6× 1.2k 1.0× 274 0.9× 184 0.9× 194 1.0× 129 1.8k
Gwangwoo Kim South Korea 19 1.7k 0.9× 671 0.5× 299 1.0× 113 0.5× 202 1.0× 34 1.9k
Chia‐Seng Chang Taiwan 11 2.9k 1.6× 1.4k 1.1× 474 1.6× 405 2.0× 240 1.2× 36 3.3k
Amit Pawbake India 20 1.1k 0.6× 982 0.8× 223 0.8× 128 0.6× 159 0.8× 53 1.5k
Il‐Kwon Oh South Korea 23 1.3k 0.7× 1.4k 1.1× 218 0.7× 118 0.6× 172 0.9× 76 1.8k
Dung‐Sheng Tsai Taiwan 13 1.5k 0.8× 954 0.8× 370 1.3× 218 1.1× 402 2.0× 20 1.8k

Countries citing papers authored by Lanxia Cheng

Since Specialization
Citations

This map shows the geographic impact of Lanxia Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lanxia Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lanxia Cheng more than expected).

Fields of papers citing papers by Lanxia Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lanxia Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lanxia Cheng. The network helps show where Lanxia Cheng may publish in the future.

Co-authorship network of co-authors of Lanxia Cheng

This figure shows the co-authorship network connecting the top 25 collaborators of Lanxia Cheng. A scholar is included among the top collaborators of Lanxia Cheng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lanxia Cheng. Lanxia Cheng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Adinolfi, Valerio, Mario Laudato, Martin E. McBriarty, et al.. (2020). ALD Heterojunction Ovonic Threshold Switches. ACS Applied Electronic Materials. 2(12). 3818–3824. 11 indexed citations
2.
Lee, Jaebeom, Jaidah Mohan, Lanxia Cheng, et al.. (2020). Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics. ACS Applied Materials & Interfaces. 12(32). 36688–36694. 31 indexed citations
3.
Adinolfi, Valerio, Mario Laudato, Martin E. McBriarty, et al.. (2020). (Invited) ALD of Phase Change and Threshold Switching Materials for Next-Generation Nonvolatile Memory Devices. ECS Meeting Abstracts. MA2020-02(23). 1684–1684. 1 indexed citations
4.
Adinolfi, Valerio, et al.. (2020). Atomic layer deposition of germanium-selenium-tellurium compounds for low-leakage, tunable ovonic threshold switches. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(5). 15 indexed citations
5.
Adinolfi, Valerio, Lanxia Cheng, Mario Laudato, et al.. (2019). Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance. ACS Nano. 13(9). 10440–10447. 35 indexed citations
6.
Zhou, Guanyu, Rafik Addou, Qingxiao Wang, et al.. (2018). High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth. Advanced Materials. 30(36). e1803109–e1803109. 94 indexed citations
7.
Kim, Harrison Sejoon, Xin Meng, Si Joon Kim, et al.. (2018). Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper. ACS Applied Materials & Interfaces. 10(51). 44825–44833. 30 indexed citations
8.
Barrera, Diego, Qingxiao Wang, Yun-Ju Lee, et al.. (2017). Solution synthesis of few-layer 2H MX2 (M = Mo, W; X = S, Se). Journal of Materials Chemistry C. 5(11). 2859–2864. 37 indexed citations
9.
Yue, Ruoyu, Yifan Nie, Lee A. Walsh, et al.. (2017). Nucleation and growth of WSe 2 : enabling large grain transition metal dichalcogenides. 2D Materials. 4(4). 45019–45019. 111 indexed citations
10.
Barrera, Diego, Ali M. Jawaid, Lanxia Cheng, et al.. (2017). Inverted OPVs with MoS2 hole transport layer deposited by spray coating. Materials Today Energy. 5. 107–111. 7 indexed citations
11.
Huang, Jie, Hengji Zhang, Antonio T. Lucero, et al.. (2016). Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD). Journal of Materials Chemistry C. 4(12). 2382–2389. 15 indexed citations
12.
Huang, Jie, Mingun Lee, Antonio T. Lucero, et al.. (2016). 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors. Japanese Journal of Applied Physics. 55(6S1). 06GK04–06GK04. 6 indexed citations
13.
Cheng, Lanxia, Srikar Jandhyala, Greg Mordi, et al.. (2016). Partially Fluorinated Graphene: Structural and Electrical Characterization. ACS Applied Materials & Interfaces. 8(7). 5002–5008. 89 indexed citations
14.
15.
Zhu, Hui, Xiaoye Qin, Lanxia Cheng, et al.. (2016). Remote Plasma Oxidation and Atomic Layer Etching of MoS2. ACS Applied Materials & Interfaces. 8(29). 19119–19126. 160 indexed citations
16.
Zhu, Hui, Stephen McDonnell, Xiaoye Qin, et al.. (2015). Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study. ACS Applied Materials & Interfaces. 7(23). 13038–13043. 81 indexed citations
17.
Cheng, Lanxia, Antonio T. Lucero, Jie Huang, et al.. (2015). Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD. Journal of Materials Chemistry C. 3(20). 5192–5198. 34 indexed citations
18.
Yang, Xi, Martha I. Serna, Lanxia Cheng, et al.. (2015). Fabrication of MoS2 thin film transistors via selective-area solution deposition methods. Journal of Materials Chemistry C. 3(16). 3842–3847. 44 indexed citations
19.
Cheng, Lanxia, Xiaoye Qin, Antonio T. Lucero, et al.. (2014). Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone. ACS Applied Materials & Interfaces. 6(15). 11834–11838. 118 indexed citations
20.
Gong, Cheng, Chun-Ming Huang, Justin T. Miller, et al.. (2013). Metal Contacts on Physical Vapor Deposited Monolayer MoS2. ACS Nano. 7(12). 11350–11357. 283 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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