Lanxia Cheng

2.5k citations

38 papers · 2.2k indexed · h-index 21

Impact in

Materials Chemistry top 2%
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Electronic and Structural Properties of Oxides
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films

Papers in ⓘ

Materials Chemistry 33
- 2D Materials and Applications 12
- Graphene research and applications 7
- ZnO doping and properties 6
- Phase-change materials and chalcogenides 6
- MXene and MAX Phase Materials 6
Electrical and Electronic Engineering 29
- Semiconductor materials and devices 14
- Perovskite Materials and Applications 6
- Chalcogenide Semiconductor Thin Films 6

Co-authors: Jiyoung Kim (29 shared papers)Robert M. Wallace (17 shared papers)Angelica Azcatl (7 shared papers)Rafik Addou (7 shared papers)Moon J. Kim (10 shared papers)Hui Zhu (8 shared papers)Xiaoye Qin (7 shared papers)Kyeongjae Cho (5 shared papers)
Journals: ACS Applied Materials & Interfaces (7 papers)ACS Nano (5 papers)Journal of Materials Chemistry C (4 papers)Japanese Journal of Applied Physics (2 papers)The Journal of Physical Chemistry C (2 papers)
Partner nations: United States South Korea Germany

In The Last Decade

Lanxia Cheng

38 papers receiving 2.2k citations

Peers

Countries citing papers authored by Lanxia Cheng

Since Specialization

Citations

This map shows the geographic impact of Lanxia Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lanxia Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lanxia Cheng more than expected).

Fields of papers citing papers by Lanxia Cheng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lanxia Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lanxia Cheng. The network helps show where Lanxia Cheng may publish in the future.

Co-authors

The 25 scholars most cited alongside Lanxia Cheng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Lanxia Cheng Line = papers co-authored together Lanxia Cheng links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure Nano Letters ·Angelica Azcatl, Xiaoye Qin, Abhijith Prakash, Chenxi Zhang, Lanxia Cheng, Qingxiao Wang, Ning Lü, Moon J. Kim, Jiyoung Kim, Kyeongjae Cho, Rafik Addou, Christopher L. Hinkle, Joerg Appenzeller, Robert M. Wallace	2016	351
2	Metal Contacts on Physical Vapor Deposited Monolayer MoS₂ ACS Nano ·Cheng Gong, Chun-Ming Huang, Justin T. Miller, Lanxia Cheng, Yufeng Hao, David Cobden, Jiyoung Kim, Rodney S. Ruoff, Robert M. Wallace, Kyeongjae Cho, Xiaodong Xu, Yves J. Chabal	2013	283
3	HfSe₂ Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy ACS Nano ·Ruoyu Yue, Adam T. Barton, Hui Zhu, Angelica Azcatl, Luis Fabián Peña, Jian Wang, Xin Peng, Ning Lü, Lanxia Cheng, Rafik Addou, Stephen McDonnell, Luigi Colombo, Julia W. P. Hsu, Jiyoung Kim, Moon J. Kim, Robert M. Wallace, Christopher L. Hinkle	2014	202
4	Remote Plasma Oxidation and Atomic Layer Etching of MoS₂ ACS Applied Materials & Interfaces ·Hui Zhu, Xiaoye Qin, Lanxia Cheng, Angelica Azcatl, Jiyoung Kim, Robert M. Wallace	2016	160
5	Defects and Surface Structural Stability of MoTe₂ Under Vacuum Annealing ACS Nano ·Hui Zhu, Qingxiao Wang, Lanxia Cheng, Rafik Addou, Jiyoung Kim, Moon J. Kim, Robert M. Wallace	2017	138
6	Atomic Layer Deposition of a High-k Dielectric on MoS₂ Using Trimethylaluminum and Ozone ACS Applied Materials & Interfaces ·Lanxia Cheng, Xiaoye Qin, Antonio T. Lucero, Angelica Azcatl, Jie Huang, Robert M. Wallace, Kyeongjae Cho, Jiyoung Kim	2014	118
7	Nucleation and growth of WSe ₂ : enabling large grain transition metal dichalcogenides 2D Materials ·Ruoyu Yue, Yifan Nie, Lee A. Walsh, Rafik Addou, Chaoping Liang, Ning Lü, Adam T. Barton, Hui Zhu, Zifan Che, Diego Barrera, Lanxia Cheng, Pil‐Ryung Cha, Yves J. Chabal, Julia W. P. Hsu, Jiyoung Kim, Moon J. Kim, Luigi Colombo, Robert M. Wallace, Kyeongjae Cho, Christopher L. Hinkle	2017	111
8	Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks Materials ·Xin Meng, Youngchul Byun, Harrison Kim, Joy Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim	2016	103
9	High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth Advanced Materials ·Guanyu Zhou, Rafik Addou, Qingxiao Wang, Shahin Honari, Christopher R. Cormier, Lanxia Cheng, Ruoyu Yue, Christopher M. Smyth, Akash Laturia, Jiyoung Kim, William G. Vandenberghe, Moon J. Kim, Robert M. Wallace, Christopher L. Hinkle	2018	94
10	Partially Fluorinated Graphene: Structural and Electrical Characterization ACS Applied Materials & Interfaces ·Lanxia Cheng, Srikar Jandhyala, Greg Mordi, Antonio T. Lucero, Jie Huang, Angelica Azcatl, Rafik Addou, Robert M. Wallace, Luigi Colombo, Jiyoung Kim	2016	89
11	Al₂O₃ on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study ACS Applied Materials & Interfaces ·Hui Zhu, Stephen McDonnell, Xiaoye Qin, Angelica Azcatl, Lanxia Cheng, Rafik Addou, Jiyoung Kim, Peide D. Ye, Robert M. Wallace	2015	81
12	Fabrication of MoS₂ thin film transistors via selective-area solution deposition methods Journal of Materials Chemistry C ·Xi Yang, Martha I. Serna, Lanxia Cheng, Yang Gao, Mahmoud Baniasadi, Rodolfo A. Rodriguez-Davila, Jiyoung Kim, Manuel Quevedo-López, Majid Minary‐Jolandan	2015	44
13	Area-Selective ALD of TiO₂ Nanolines with Electron-Beam Lithography The Journal of Physical Chemistry C ·Jie Huang, Mingun Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim	2014	41
14	Solution synthesis of few-layer 2H MX₂ (M = Mo, W; X = S, Se) Journal of Materials Chemistry C ·Diego Barrera, Qingxiao Wang, Yun-Ju Lee, Lanxia Cheng, Moon J. Kim, Jiyoung Kim, Julia W. P. Hsu	2017	37
15	Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance ACS Nano ·Valerio Adinolfi, Lanxia Cheng, Mario Laudato, Ryan Clarke, V. Narasimhan, Simone Balatti, Son Hoang, Karl A. Littau	2019	35
16	Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS₂ for Two-Dimensional Material-Based Devices ACS Nano ·Lanxia Cheng, Jaebeom Lee, Hui Zhu, Arul Vigneswar Ravichandran, Qingxiao Wang, Antonio T. Lucero, Moon J. Kim, Robert M. Wallace, Luigi Colombo, Jiyoung Kim	2017	34
17	Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD Journal of Materials Chemistry C ·Lanxia Cheng, Kayoung Yun, Antonio T. Lucero, Jie Huang, Xin Meng, Guoda Lian, Ho-Seok Nam, Robert M. Wallace, Moon J. Kim, Archana Venugopal, Luigi Colombo, Jiyoung Kim	2015	34
18	Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics ACS Applied Materials & Interfaces ·Jaebeom Lee, Arul Vigneswar Ravichandran, Jaidah Mohan, Lanxia Cheng, Antonio T. Lucero, Hui Zhu, Zifan Che, M. Catalano, Moon J. Kim, Robert M. Wallace, Archana Venugopal, Woong Choi, Luigi Colombo, Jiyoung Kim	2020	31
19	Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper ACS Applied Materials & Interfaces ·Harrison Sejoon Kim, Xin Meng, Si Joon Kim, Antonio T. Lucero, Lanxia Cheng, Youngchul Byun, Joy S. Lee, Su Min Hwang, Aswin L. N. Kondusamy, Robert M. Wallace, Gary Goodman, A. Wan, Michael Telgenhoff, Byung Keun Hwang, Jiyoung Kim	2018	30
20	Combustion Synthesis of p-Type Transparent Conducting CuCrO_2+x and Cu:CrO_x Thin Films at 180 °C ACS Applied Materials & Interfaces ·Jian Wang, Trey B. Daunis, Lanxia Cheng, Bo Zhang, Jiyoung Kim, Julia W. P. Hsu	2018	30

About Lanxia Cheng

Lanxia Cheng is a scholar working on Materials Chemistry, Electrical and Electronic Engineering, Polymers and Plastics, Inorganic Chemistry and Biomedical Engineering, having authored 38 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), 2D Materials and Applications (12 papers), Graphene research and applications (7 papers), ZnO doping and properties (6 papers), Perovskite Materials and Applications (6 papers), Phase-change materials and chalcogenides (6 papers), MXene and MAX Phase Materials (6 papers) and Chalcogenide Semiconductor Thin Films (6 papers). The work is most often cited by research in Materials Chemistry (1.9k citations), Electrical and Electronic Engineering (1.3k citations), Renewable Energy, Sustainability and the Environment (206 citations), Electronic, Optical and Magnetic Materials (200 citations) and Biomedical Engineering (294 citations). Lanxia Cheng has collaborated with scholars based in United States, South Korea and Germany. Frequent co-authors include Jiyoung Kim, Robert M. Wallace, Angelica Azcatl, Rafik Addou, Moon J. Kim, Hui Zhu, Xiaoye Qin, Kyeongjae Cho, Antonio T. Lucero and Qingxiao Wang. Their work appears in journals such as ACS Applied Materials & Interfaces, ACS Nano, Journal of Materials Chemistry C, Japanese Journal of Applied Physics and The Journal of Physical Chemistry C.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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