Wonbo Shim

716 total citations
33 papers, 509 citations indexed

About

Wonbo Shim is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Cognitive Neuroscience. According to data from OpenAlex, Wonbo Shim has authored 33 papers receiving a total of 509 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 6 papers in Cellular and Molecular Neuroscience and 3 papers in Cognitive Neuroscience. Recurrent topics in Wonbo Shim's work include Advanced Memory and Neural Computing (31 papers), Ferroelectric and Negative Capacitance Devices (28 papers) and Semiconductor materials and devices (18 papers). Wonbo Shim is often cited by papers focused on Advanced Memory and Neural Computing (31 papers), Ferroelectric and Negative Capacitance Devices (28 papers) and Semiconductor materials and devices (18 papers). Wonbo Shim collaborates with scholars based in United States and South Korea. Wonbo Shim's co-authors include Shimeng Yu, Yandong Luo, Xiaochen Peng, Jae Hur, Jae-sun Seo, Panni Wang, Asif Islam Khan, Suman Datta, Zheng Wang and Gihun Choe and has published in prestigious journals such as The Journal of Chemical Physics, IEEE Transactions on Electron Devices and Journal of Materials Chemistry C.

In The Last Decade

Wonbo Shim

31 papers receiving 498 citations

Peers

Wonbo Shim

EEE

CMN

Martino Dazzi Switzerland

Kohji Hosokawa Japan

Vinay Joshi Switzerland

Yan Liao China

Yong-Min Ju South Korea

S. S. Teja Nibhanupudi United States

Panni Wang United States

Arman Kazemi United States

Yasmin Halawani United Arab Emirates

Hui-Yao Kao Taiwan

Martino Dazzi Switzerland

Wonbo Shim

414 ×0.9

EEE

112 ×1.3

64 ×1.0

CMN

65 ×1.0

27 ×1.1

Citations per year, relative to Wonbo Shim Wonbo Shim (= 1×) peers Martino Dazzi

Countries citing papers authored by Wonbo Shim

Since Specialization

Citations

This map shows the geographic impact of Wonbo Shim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wonbo Shim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wonbo Shim more than expected).

Fields of papers citing papers by Wonbo Shim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wonbo Shim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wonbo Shim. The network helps show where Wonbo Shim may publish in the future.

Co-authorship network of co-authors of Wonbo Shim

This figure shows the co-authorship network connecting the top 25 collaborators of Wonbo Shim. A scholar is included among the top collaborators of Wonbo Shim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wonbo Shim. Wonbo Shim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Shim, Wonbo, et al.. (2025). Design of 2T DRAM Cell With Surrounding Poly-Si Capacitor for Enhanced Retention and Mitigated Coupling Effect. IEEE Transactions on Device and Materials Reliability. 25(3). 460–464.

Shim, Wonbo, et al.. (2024). Advanced 2T0C DRAM Technologies for Processing-in-Memory—Part I: Vertical Transistor on Gate (VTG) DRAM Cell Structure. IEEE Transactions on Electron Devices. 71(11). 6633–6638. 2 indexed citations

Ismail, Muhammad, et al.. (2024). Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition. The Journal of Chemical Physics. 161(13). 8 indexed citations

Shim, Wonbo, et al.. (2024). Advanced 2T0C DRAM Technologies for Processing-in-Memory—Part II: Adaptive Layer-Wise Refresh Technique. IEEE Transactions on Electron Devices. 71(11). 6639–6646. 1 indexed citations

Kim, Yoon, et al.. (2023). Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications. Micromachines. 14(9). 1753–1753. 1 indexed citations

Jang, Junwon, et al.. (2023). Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing. Materials. 16(20). 6698–6698. 4 indexed citations

Park, Yongjin, Jihyung Kim, Sunghun Kim, et al.. (2023). Effect of interfacial SiO₂ layer thickness on the memory performances in the HfAlO_x-based ferroelectric tunnel junction for a neuromorphic system. Journal of Materials Chemistry C. 11(40). 13886–13896. 11 indexed citations

Song, S. J., Sihyun Kim, Kitae Lee, et al.. (2022). Spiking Neural Network With Weight-Sharing Synaptic Array for Multi-input Processing. IEEE Electron Device Letters. 43(10). 1657–1660. 4 indexed citations

Choe, Gihun, Wonbo Shim, Panni Wang, et al.. (2021). Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing. IEEE Transactions on Electron Devices. 68(5). 2543–2548. 17 indexed citations

10.

Luo, Yuan-Chun, Jae Hur, Zheng Wang, et al.. (2021). A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure. IEEE Transactions on Electron Devices. 69(1). 109–114. 8 indexed citations

11.

Yu, Shimeng, Jae Hur, Yuan-Chun Luo, et al.. (2021). Ferroelectric HfO ₂ -based synaptic devices: recent trends and prospects. Semiconductor Science and Technology. 36(10). 104001–104001. 35 indexed citations

12.

Meng, Jian, Wonbo Shim, Li Yang, et al.. (2021). Temperature-Resilient RRAM-Based In-Memory Computing for DNN Inference. IEEE Micro. 42(1). 89–98. 19 indexed citations

13.

Hur, Jae, Yuan-Chun Luo, Zheng Wang, et al.. (2021). A Technology Path for Scaling Embedded FeRAM to 28nm with 2T1C Structure. 1–4. 8 indexed citations

14.

Shim, Wonbo & Shimeng Yu. (2021). System-Technology Codesign of 3-D NAND Flash-Based Compute-in-Memory Inference Engine. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 7(1). 61–69. 6 indexed citations

15.

Wang, Panni, Zheng Wang, Wonbo Shim, et al.. (2020). Drain–Erase Scheme in Ferroelectric Field-Effect Transistor—Part I: Device Characterization. IEEE Transactions on Electron Devices. 67(3). 955–961. 32 indexed citations

16.

Wang, Panni, Wonbo Shim, Zheng Wang, et al.. (2020). Drain-Erase Scheme in Ferroelectric Field Effect Transistor—Part II: 3-D-NAND Architecture for In-Memory Computing. IEEE Transactions on Electron Devices. 67(3). 962–967. 32 indexed citations

17.

Shim, Wonbo, et al.. (2020). Two-step write–verify scheme and impact of the read noise in multilevel RRAM-based inference engine. Semiconductor Science and Technology. 35(11). 115026–115026. 38 indexed citations

18.

Peng, Xiaochen, Wriddhi Chakraborty, Wonbo Shim, et al.. (2020). Benchmarking Monolithic 3D Integration for Compute-in-Memory Accelerators: Overcoming ADC Bottlenecks and Maintaining Scalability to 7nm or Beyond. 30.4.1–30.4.4. 21 indexed citations

19.

Shim, Wonbo, Yandong Luo, Jae-sun Seo, & Shimeng Yu. (2020). Investigation of Read Disturb and Bipolar Read Scheme on Multilevel RRAM-Based Deep Learning Inference Engine. IEEE Transactions on Electron Devices. 67(6). 2318–2323. 30 indexed citations

20.

Shim, Wonbo, Hongwu Jiang, Xiaochen Peng, & Shimeng Yu. (2020). Architectural Design of 3D NAND Flash based Compute-in-Memory for Inference Engine. 77–85. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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