W. Schairer

776 total citations
19 papers, 628 citations indexed

About

W. Schairer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, W. Schairer has authored 19 papers receiving a total of 628 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in W. Schairer's work include Semiconductor Quantum Structures and Devices (12 papers), Semiconductor materials and interfaces (5 papers) and Quantum Dots Synthesis And Properties (3 papers). W. Schairer is often cited by papers focused on Semiconductor Quantum Structures and Devices (12 papers), Semiconductor materials and interfaces (5 papers) and Quantum Dots Synthesis And Properties (3 papers). W. Schairer collaborates with scholars based in Germany, United States and India. W. Schairer's co-authors include Martin Schmidt, D. Bimberg, Martin Schmidt, M. W. Shafer, T. N. Morgan, T. O. Yep, K. Cho, M. Sondergeld, Uli Lemmer and M. Schall and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Schairer

17 papers receiving 572 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Schairer Germany	14	458	393	271	82	61	19	628
L. Gouskov France	15	386 0.8×	483 1.2×	247 0.9×	26 0.3×	62 1.0×	56	617
J. C. Bourgoin France	14	426 0.9×	439 1.1×	134 0.5×	70 0.9×	63 1.0×	52	602
H. Stanzl Germany	16	340 0.7×	443 1.1×	332 1.2×	54 0.7×	24 0.4×	38	544
M. Möller Germany	10	321 0.7×	351 0.9×	239 0.9×	75 0.9×	77 1.3×	17	523
F. Fischer Germany	12	440 1.0×	408 1.0×	272 1.0×	92 1.1×	92 1.5×	27	604
H. Jung Germany	12	390 0.9×	473 1.2×	273 1.0×	145 1.8×	75 1.2×	25	630
S. Fukatsu Japan	10	511 1.1×	426 1.1×	280 1.0×	125 1.5×	57 0.9×	16	649
J. Nürnberger Germany	14	477 1.0×	371 0.9×	276 1.0×	78 1.0×	27 0.4×	43	608
K. Wolf Germany	16	358 0.8×	442 1.1×	313 1.2×	55 0.7×	19 0.3×	29	535
M. Sondergeld Germany	8	319 0.7×	262 0.7×	201 0.7×	69 0.8×	50 0.8×	8	438

Countries citing papers authored by W. Schairer

Since Specialization

Citations

This map shows the geographic impact of W. Schairer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Schairer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Schairer more than expected).

Fields of papers citing papers by W. Schairer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Schairer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Schairer. The network helps show where W. Schairer may publish in the future.

Co-authorship network of co-authors of W. Schairer

This figure shows the co-authorship network connecting the top 25 collaborators of W. Schairer. A scholar is included among the top collaborators of W. Schairer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Schairer. W. Schairer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

19 of 19 papers shown

Jepsen, Peter Uhd, W. Schairer, Uli Lemmer, et al.. (2001). Ultrafast carrier trapping in microcrystalline silicon observed in optical pump–terahertz probe measurements. Applied Physics Letters. 79(9). 1291–1293. 89 indexed citations

Schairer, W., et al.. (1986). Light emitting diodes: an introduction. 14 indexed citations

Schairer, W., et al.. (1986). A Monolithically Integrated 128 Led-Driver and Its Application. IEEE Transactions on Consumer Electronics. CE-32(1). 26–31.

Schairer, W.. (1984). Rapid thermal redistribution of copper impurities in GaAsxP1-x at temperatures above 250 °C. Journal of Electronic Materials. 13(3). 559–574. 3 indexed citations

Schairer, W., et al.. (1981). Long Term Stability of Zn-Diffused Green Emitting TGS Grown GaP LED's. Japanese Journal of Applied Physics. 20(12). 2343–2343. 5 indexed citations

Marshall, Alexander J., et al.. (1980). LED Arrays Fabricated without Wire Bonds. Japanese Journal of Applied Physics. 19(3). L129–L132.

Schairer, W.. (1979). Defect centers and degradation of GaP:N LED's. Journal of Electronic Materials. 8(2). 139–152. 20 indexed citations

Schairer, W., et al.. (1976). Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAs. Physical review. B, Solid state. 13(8). 3452–3467. 85 indexed citations

Schmidt, Martin, T. N. Morgan, & W. Schairer. (1975). Stress effects on excitons bound to shallow acceptors in GaAs. Physical review. B, Solid state. 11(12). 5002–5007. 39 indexed citations

10.

Dean, P. J., W. Schairer, Michael Lorenz, & T. N. Morgan. (1974). The gallium-site donors germanium and silicon in gallium phosphide. Journal of Luminescence. 9(5). 343–379. 26 indexed citations

11.

Schairer, W. & Martin Schmidt. (1974). Strongly quenched deformation potentials of the Mn acceptor in GaAs. Physical review. B, Solid state. 10(6). 2501–2506. 92 indexed citations

12.

Schairer, W. & M. W. Shafer. (1973). Growth and optical absorption spectra of the layer-type trichalcogenides ZrS3 and HfS3. physica status solidi (a). 17(1). 181–184. 58 indexed citations

13.

Bimberg, D. & W. Schairer. (1972). Nonhydrogenic Exciton and Energy Gap of GaAs. Physical Review Letters. 28(7). 442–445. 29 indexed citations

14.

Schairer, W., et al.. (1972). Impact Ionization of Donors in Semiconductors as a Tool for Photoluminescence Investigations. Journal of Applied Physics. 43(2). 447–450. 29 indexed citations

15.

Schairer, W. & T. O. Yep. (1971). Two-hole transition in the luminescence of excitons bound to neutral acceptors in GaAs. Solid State Communications. 9(7). 421–424. 12 indexed citations

16.

Schairer, W., et al.. (1970). Photolumineszenz-spektrum des Sn-Akzeptors in GaAs. Solid State Communications. 8(23). 2017–2019. 31 indexed citations

17.

Schairer, W., et al.. (1970). Photoluminescence of Ag-doped p-type GaAs. Solid State Communications. 8(16). 1265–1268. 14 indexed citations

18.

Bimberg, D., W. Schairer, M. Sondergeld, & T. O. Yep. (1970). Bound exciton luminescence in epitaxial Sn-doped gallium-arsenide. Journal of Luminescence. 3(3). 175–184. 47 indexed citations

19.

Schairer, W., et al.. (1969). Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxy. Journal of Physics and Chemistry of Solids. 30(9). 2225–2229. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact