W. Rothemund

690 total citations
37 papers, 513 citations indexed

About

W. Rothemund is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, W. Rothemund has authored 37 papers receiving a total of 513 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in W. Rothemund's work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (13 papers) and Advanced Semiconductor Detectors and Materials (11 papers). W. Rothemund is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (13 papers) and Advanced Semiconductor Detectors and Materials (11 papers). W. Rothemund collaborates with scholars based in Germany, Austria and Finland. W. Rothemund's co-authors include C. R. Fritzsche, J.D. Ralston, K. Köhler, P. Ganser, E.C. Larkins, P. Koidl, B. Dischler, Matthias Haupt, S. Müller and J. Baars and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Rothemund

36 papers receiving 488 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Rothemund Germany 15 391 279 163 94 47 37 513
E. H. C. Parker United Kingdom 16 414 1.1× 315 1.1× 188 1.2× 106 1.1× 25 0.5× 48 569
P. Molinàs-Mata Germany 13 176 0.5× 326 1.2× 143 0.9× 32 0.3× 46 1.0× 27 446
A. M. Mazzone Italy 11 333 0.9× 211 0.8× 99 0.6× 141 1.5× 26 0.6× 77 472
K. E. Khor United States 13 211 0.5× 363 1.3× 199 1.2× 32 0.3× 102 2.2× 26 533
Yu.L. Khait Israel 14 303 0.8× 170 0.6× 289 1.8× 100 1.1× 71 1.5× 53 488
L. L. Abels United States 10 233 0.6× 178 0.6× 118 0.7× 56 0.6× 12 0.3× 14 361
I. D. Calder Canada 13 216 0.6× 224 0.8× 145 0.9× 54 0.6× 64 1.4× 34 470
G. Poiblaud France 10 364 0.9× 362 1.3× 117 0.7× 22 0.2× 91 1.9× 13 509
Н.В. Абросимов Germany 10 268 0.7× 156 0.6× 205 1.3× 33 0.4× 63 1.3× 38 423
J.M. Bermond France 10 101 0.3× 300 1.1× 178 1.1× 48 0.5× 95 2.0× 18 488

Countries citing papers authored by W. Rothemund

Since Specialization
Citations

This map shows the geographic impact of W. Rothemund's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Rothemund with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Rothemund more than expected).

Fields of papers citing papers by W. Rothemund

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Rothemund. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Rothemund. The network helps show where W. Rothemund may publish in the future.

Co-authorship network of co-authors of W. Rothemund

This figure shows the co-authorship network connecting the top 25 collaborators of W. Rothemund. A scholar is included among the top collaborators of W. Rothemund based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Rothemund. W. Rothemund is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Baeumler, M., et al.. (1996). Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structures. Journal of Applied Physics. 79(9). 6818–6825. 15 indexed citations
2.
Haupt, Matthias, et al.. (1996). Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAs. Applied Physics Letters. 69(3). 412–414. 44 indexed citations
3.
Larkins, E.C., et al.. (1995). Impurity free selective interdiffusion of pseudomorphic InyGa1−yAs/GaAs multiple quantum well laser and modulator structures. Materials Science and Technology. 11(8). 840–844. 3 indexed citations
4.
5.
Larkins, E.C., et al.. (1993). MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures. Journal of Crystal Growth. 127(1-4). 541–545. 12 indexed citations
6.
Larkins, E.C., H. Schneider, J.D. Ralston, et al.. (1993). Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE. Journal of Crystal Growth. 127(1-4). 62–67. 6 indexed citations
7.
Bachem, K. H., D. Fekete, W. Pletschen, W. Rothemund, & K. Winkler. (1992). OMVPE-grown (AlxGa1−x)0.5In0.5P/InGaAs MODFET structures: growth procedure and Hall properties. Journal of Crystal Growth. 124(1-4). 817–823. 6 indexed citations
8.
9.
Köhler, K., et al.. (1991). Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures. Applied Physics Letters. 59(21). 2736–2738. 23 indexed citations
10.
Hingerl, Kurt, H. Sitter, D. J. As, & W. Rothemund. (1990). Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy. Journal of Crystal Growth. 101(1-4). 180–184. 15 indexed citations
11.
As, D. J., Th. Frey, W. Jantz, et al.. (1990). Influence of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures. Journal of Electronic Materials. 19(7). 747–751. 5 indexed citations
12.
Eisele, K., W. Rothemund, & B. Dischler. (1990). Photolytic silicon nitride deposition for gallium arsenide by 193 nm excimer laser radiation. Vacuum. 41(4-6). 1081–1083.
13.
Wagner, J., W. Wettling, J. Windscheif, & W. Rothemund. (1989). Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs. Journal of Applied Physics. 65(12). 5225–5227. 8 indexed citations
14.
Baars, J., et al.. (1982). Boron ion implantation in Hg1−xCdxTe. Journal of Applied Physics. 53(3). 1461–1466. 44 indexed citations
15.
Rothemund, W. & C. R. Fritzsche. (1979). Critical implantation temperature and annealing of indium phosphide. Journal of Vacuum Science and Technology. 16(3). 968–969. 21 indexed citations
16.
Fritzsche, C. R. & W. Rothemund. (1978). The investigation of radiation damage by electron beam absorption measurements. Applied Physics A. 16(4). 339–343. 4 indexed citations
17.
Rothemund, W., et al.. (1978). Pb0.8Sn0.2Te Infrared photodiodes by indium implantation. Revue de Physique Appliquée. 13(12). 753–756. 3 indexed citations
18.
Rothemund, W., et al.. (1976). The investigation of ion implanted layers by scanning electron microscopy. Applied Physics A. 10(2). 111–119. 8 indexed citations
19.
Fritzsche, C. R. & W. Rothemund. (1975). Sputtering during ion implantation into gallium arsenide. Applied Physics B. 7(1). 39–44. 14 indexed citations
20.
Krimmel, E. F., G. Möllenstedt, & W. Rothemund. (1964). MEASUREMENT OF CONTACT POTENTIAL DIFFERENCES BY ELECTRON INTERFEROMETRY. Applied Physics Letters. 5(10). 209–210. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by E. H. C. Parker Breakdown of academic impact, for papers by P. Molinàs-Mata Breakdown of academic impact, for papers by A. M. Mazzone Breakdown of academic impact, for papers by K. E. Khor Breakdown of academic impact, for papers by Yu.L. Khait Breakdown of academic impact, for papers by L. L. Abels Breakdown of academic impact, for papers by I. D. Calder Breakdown of academic impact, for papers by G. Poiblaud Breakdown of academic impact, for papers by Н.В. Абросимов Breakdown of academic impact, for papers by J.M. Bermond
Rankless by CCL
2026