J. Baars

643 total citations
28 papers, 478 citations indexed

About

J. Baars is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Baars has authored 28 papers receiving a total of 478 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in J. Baars's work include Advanced Semiconductor Detectors and Materials (23 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Semiconductor Quantum Structures and Devices (10 papers). J. Baars is often cited by papers focused on Advanced Semiconductor Detectors and Materials (23 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Semiconductor Quantum Structures and Devices (10 papers). J. Baars collaborates with scholars based in Germany, United States and Netherlands. J. Baars's co-authors include W. Koschel, J. C. Fontanella, C. R. Fritzsche, W. Rothemund, T. Jakobus, P. M. Amirtharaj, Nibir K. Dhar, A. Räuber, Michael Schulz and D. Bassett and has published in prestigious journals such as Journal of Applied Physics, Solid State Communications and Journal of Crystal Growth.

In The Last Decade

J. Baars

27 papers receiving 440 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Baars Germany	12	388	234	205	47	35	28	478
Thomas J. Miller United States	12	268 0.7×	236 1.0×	160 0.8×	46 1.0×	51 1.5×	55	489
Christopher Ard United States	12	314 0.8×	177 0.8×	209 1.0×	21 0.4×	38 1.1×	21	417
J. F. Kos Canada	8	295 0.8×	107 0.5×	157 0.8×	31 0.7×	9 0.3×	22	455
H. Ehsani United States	13	337 0.9×	226 1.0×	121 0.6×	26 0.6×	59 1.7×	40	453
G. E. Crook United States	11	271 0.7×	234 1.0×	107 0.5×	108 2.3×	52 1.5×	28	441
J. P. Brainard United States	6	381 1.0×	112 0.5×	330 1.6×	47 1.0×	43 1.2×	18	467
O. K. Wu United States	17	585 1.5×	404 1.7×	151 0.7×	73 1.6×	44 1.3×	58	648
Mitsutoshi Takahashi Japan	12	522 1.3×	299 1.3×	147 0.7×	17 0.4×	60 1.7×	21	632
P. W. Norton United States	12	436 1.1×	233 1.0×	96 0.5×	113 2.4×	47 1.3×	35	475
William J. Tropf United States	8	125 0.3×	71 0.3×	124 0.6×	27 0.6×	55 1.6×	18	283

Countries citing papers authored by J. Baars

Since Specialization

Citations

This map shows the geographic impact of J. Baars's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Baars with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Baars more than expected).

Fields of papers citing papers by J. Baars

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Baars. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Baars. The network helps show where J. Baars may publish in the future.

Co-authorship network of co-authors of J. Baars

This figure shows the co-authorship network connecting the top 25 collaborators of J. Baars. A scholar is included among the top collaborators of J. Baars based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Baars. J. Baars is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Baars, J., et al.. (1996). <title>Effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg1-xCdxTe</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2816. 98–105. 1 indexed citations

Baars, J., et al.. (1995). Nondestructive characterization of Hg1−xCdxTe layers with n-p structures by magneto-thermoelectric measurements. Journal of Electronic Materials. 24(9). 1311–1319.

Esquivias, I., J. Baars, D. Brink, & Д. Егер. (1993). Electrical properties of the anodic oxide-HgZnTe interface. Semiconductor Science and Technology. 8(1S). S71–S74. 3 indexed citations

Baars, J., et al.. (1993). Growth and Characterization of Materials for Infrared Detectors II. 2021. 13 indexed citations

Baars, J. & D. Brink. (1993). <title>Nondestructive characterization of Hg1-xCdxTe layer structures by magneto-thermoelectric measurements</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2021. 222–231. 1 indexed citations

Baars, J., D. Brink, & J. F. Ziegler. (1991). Determination of acceptor densities in p-type Hg1−xCdxTe by thermoelectric measurements. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(3). 1709–1715. 5 indexed citations

Baars, J., et al.. (1991). Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches. 1484. 2 indexed citations

Amirtharaj, P. M., et al.. (1990). Investigation of photons in HgCdTe using Raman scattering and far-infrared reflectivity. Semiconductor Science and Technology. 5(3S). S68–S72. 29 indexed citations

Baars, J., et al.. (1989). Future Infrared Detector Materials. 2 indexed citations

10.

Baars, J., et al.. (1988). Arsenic ion implantation in Hg1-xCdxTe. Journal of Crystal Growth. 86(1-4). 762–767. 12 indexed citations

11.

Baars, J., et al.. (1986). Characterization of p-type Hg 1_x Cd x Te by infrared reflectance. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 659. 44–44. 1 indexed citations

12.

Fontanella, J. C., et al.. (1982). The Definition of the OTF and the Measurement of Aliasing for Sampled Imaging Systems. Optica Acta International Journal of Optics. 29(1). 41–50. 48 indexed citations

13.

Baars, J., et al.. (1982). Boron ion implantation in Hg1−xCdxTe. Journal of Applied Physics. 53(3). 1461–1466. 44 indexed citations

14.

Baars, J., D. Bassett, & Michael Schulz. (1978). Metal–semiconductor barrier studies of PbTe. physica status solidi (a). 49(2). 483–488. 15 indexed citations

15.

Rothemund, W., et al.. (1978). Pb0.8Sn0.2Te Infrared photodiodes by indium implantation. Revue de Physique Appliquée. 13(12). 753–756. 3 indexed citations

16.

Koschel, W., et al.. (1975). OPTICAL PHONONS IN I-III-VI₂ COMPOUNDS. Le Journal de Physique Colloques. 36(C3). C3–177. 19 indexed citations

17.

Koschel, W., et al.. (1974). Raman and infrared spectra of ZnSiAs2. Solid State Communications. 15(4). 719–723. 17 indexed citations

18.

Koschel, W., et al.. (1973). Optical phonons in CuAlS2. Solid State Communications. 13(7). 1011–1016. 22 indexed citations

19.

Baars, J. & W. Koschel. (1972). Dielectric dispersion of CuGaS2 by infrared reflectivity analysis. Solid State Communications. 11(11). 1513–1517. 36 indexed citations

20.

Gobrecht, H., et al.. (1967). Self diffusion of sulphur in zinc sulphide. Solid State Communications. 5(9). 777–778. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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