Vasyl Motsnyi

1.1k total citations
30 papers, 872 citations indexed

About

Vasyl Motsnyi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Vasyl Motsnyi has authored 30 papers receiving a total of 872 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 14 papers in Electrical and Electronic Engineering and 7 papers in Condensed Matter Physics. Recurrent topics in Vasyl Motsnyi's work include Quantum and electron transport phenomena (11 papers), Magnetic properties of thin films (9 papers) and CCD and CMOS Imaging Sensors (6 papers). Vasyl Motsnyi is often cited by papers focused on Quantum and electron transport phenomena (11 papers), Magnetic properties of thin films (9 papers) and CCD and CMOS Imaging Sensors (6 papers). Vasyl Motsnyi collaborates with scholars based in Belgium, Switzerland and France. Vasyl Motsnyi's co-authors include W. Van Roy, G. Borghs, J. De Boeck, E. Goovaerts, V. I. Safarov, J. Das, Pol Van Dorpe, Kristof Dessein, Diederik Paul Moeys and David San Segundo Bello and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Vasyl Motsnyi

29 papers receiving 854 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Vasyl Motsnyi Belgium 11 549 445 273 214 152 30 872
Ajey P. Jacob United States 15 349 0.6× 638 1.4× 363 1.3× 109 0.5× 55 0.4× 60 899
Takao Marukame Japan 20 565 1.0× 476 1.1× 584 2.1× 721 3.4× 110 0.7× 57 1.3k
Chando Park United States 9 668 1.2× 666 1.5× 347 1.3× 267 1.2× 157 1.0× 10 1.1k
Chi Fang China 21 1.1k 2.0× 696 1.6× 353 1.3× 518 2.4× 356 2.3× 66 1.4k
Akihiro Matsutani Japan 20 652 1.2× 1.1k 2.6× 163 0.6× 63 0.3× 69 0.5× 208 1.4k
Fangchu Chen China 16 455 0.8× 173 0.4× 688 2.5× 259 1.2× 189 1.2× 42 941
Yumeng Yang China 18 1.0k 1.9× 636 1.4× 669 2.5× 508 2.4× 350 2.3× 80 1.6k
Shouzhong Peng China 16 712 1.3× 538 1.2× 246 0.9× 379 1.8× 180 1.2× 43 989
Wenqin Mo China 12 159 0.3× 310 0.7× 120 0.4× 94 0.4× 103 0.7× 66 510
Huicai Zhong China 12 135 0.2× 525 1.2× 209 0.8× 97 0.5× 27 0.2× 48 658

Countries citing papers authored by Vasyl Motsnyi

Since Specialization
Citations

This map shows the geographic impact of Vasyl Motsnyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Vasyl Motsnyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Vasyl Motsnyi more than expected).

Fields of papers citing papers by Vasyl Motsnyi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Vasyl Motsnyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Vasyl Motsnyi. The network helps show where Vasyl Motsnyi may publish in the future.

Co-authorship network of co-authors of Vasyl Motsnyi

This figure shows the co-authorship network connecting the top 25 collaborators of Vasyl Motsnyi. A scholar is included among the top collaborators of Vasyl Motsnyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Vasyl Motsnyi. Vasyl Motsnyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Yunlong, Vasyl Motsnyi, Wei Wei, et al.. (2023). Wafer Reconstitution: embedded multi-die III-V and silicon co-integration platform. 2 indexed citations
2.
Taverni, Gemma, Diederik Paul Moeys, Chenghan Li, et al.. (2018). Live Demonstration: Front and Back Illuminated Dynamic and Active Pixel Vision Sensors Comparison. Zurich Open Repository and Archive (University of Zurich). 1–1. 2 indexed citations
3.
Taverni, Gemma, Diederik Paul Moeys, Chenghan Li, et al.. (2018). Front and Back Illuminated Dynamic and Active Pixel Vision Sensors Comparison. IEEE Transactions on Circuits & Systems II Express Briefs. 65(5). 677–681. 90 indexed citations
4.
Motsnyi, Vasyl, Ingrid De Wolf, Véronique Rochus, et al.. (2018). Novel technology for microlenses for imaging applications. Applied Optics. 57(31). 9296–9296. 5 indexed citations
5.
Boulenc, P., Lin-Kun Wu, Vasyl Motsnyi, et al.. (2017). High Speed Backside Illuminated TDI CCD-in-CMOS Sensor. VUBIR (Vrije Universiteit Brussel). 364–367. 1 indexed citations
6.
Taverni, Gemma, Diederik Paul Moeys, Fabian F. Voigt, et al.. (2017). In-vivo imaging of neural activity with dynamic vision sensors. Zurich Open Repository and Archive (University of Zurich). 1–4. 6 indexed citations
7.
Pham, Nga, et al.. (2011). Substrate Transfer for GaN based LEDs grown on Silicon. IMAPSource Proceedings. 2011(1). 130–135. 4 indexed citations
8.
Lieten, Ruben, Vasyl Motsnyi, Kai Cheng, et al.. (2011). Mg doping of GaN by molecular beam epitaxy. Journal of Physics D Applied Physics. 44(13). 135406–135406. 24 indexed citations
9.
Brammertz, Guy, Yves Mols, Stefan Degroote, et al.. (2006). Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates. Journal of Applied Physics. 99(9). 51 indexed citations
10.
Roy, W. Van, Pol Van Dorpe, Vasyl Motsnyi, et al.. (2004). Spin‐injection in semiconductors: materials challenges and device aspects. physica status solidi (b). 241(7). 1470–1476. 11 indexed citations
11.
Dorpe, Pol Van, W. Van Roy, Vasyl Motsnyi, et al.. (2004). Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode. Applied Physics Letters. 84(18). 3495–3497. 98 indexed citations
12.
Motsnyi, Vasyl, Pol Van Dorpe, W. Van Roy, et al.. (2003). Optical investigation of electrical spin injection into semiconductors. Physical review. B, Condensed matter. 68(24). 104 indexed citations
13.
Motsnyi, Vasyl, V. I. Safarov, J. De Boeck, et al.. (2003). Oblique Hanle effect for reliable assessment of electrical spin injection. 40. BB10–BB10. 1 indexed citations
14.
Motsnyi, Vasyl, V. I. Safarov, Pol Van Dorpe, et al.. (2003). Electrical Spin Injection in a Ferromagnetic Metal/Insulator/Semiconductor Tunnel Heterostructure. Journal of Superconductivity. 16(4). 671–678. 3 indexed citations
15.
Dorpe, Pol Van, Vasyl Motsnyi, E. Goovaerts, et al.. (2003). Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode. Japanese Journal of Applied Physics. 42(Part 2, No. 5B). L502–L504. 34 indexed citations
16.
Boeck, J. De, W. Van Roy, Vasyl Motsnyi, et al.. (2003). Magnetic/semiconductor heterostructures for spintronic devices. 4190. FA1–FA1. 1 indexed citations
17.
Motsnyi, Vasyl, et al.. (2002). Electrical spin injection in a semiconductor in the MIS heterostructure. Influence of the tunnel barrier. 1 indexed citations
18.
Safarov, V. I., Vasyl Motsnyi, Jo De Boeck, et al.. (2002). Highly efficient spin injection in ferromagnetic metal/insulator/semiconductor tunnel structures. 1 indexed citations
19.
Boeck, J. De, W. Van Roy, J. Das, et al.. (2002). Technology and materials issues in semiconductor-based magnetoelectronics. Semiconductor Science and Technology. 17(4). 342–354. 128 indexed citations
20.
Motsnyi, Vasyl, W. Van Roy, H. Boeve, et al.. (2000). Ferromagnetic metal / tunnel barrier / semiconductor devices for optical detection of spin-polarized current injection into a semiconductor. 22. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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