V. G. Tyuterev

796 total citations
29 papers, 623 citations indexed

About

V. G. Tyuterev is a scholar working on Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, V. G. Tyuterev has authored 29 papers receiving a total of 623 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 13 papers in Materials Chemistry and 11 papers in Electrical and Electronic Engineering. Recurrent topics in V. G. Tyuterev's work include Semiconductor Quantum Structures and Devices (14 papers), High-pressure geophysics and materials (7 papers) and Advanced Chemical Physics Studies (6 papers). V. G. Tyuterev is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), High-pressure geophysics and materials (7 papers) and Advanced Chemical Physics Studies (6 papers). V. G. Tyuterev collaborates with scholars based in Russia, France and Spain. V. G. Tyuterev's co-authors include Nathalie Vast, Jelena Sjakste, Zhao Wang, Shidong Wang, Natalio Mingo, V. P. Zhukov, Е. В. Чулков, А. С. Поплавной, P. M. Échenique and Hariom Jani and has published in prestigious journals such as Physical Review Letters, Physical Review B and Journal of Physics Condensed Matter.

In The Last Decade

V. G. Tyuterev

29 papers receiving 599 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. G. Tyuterev Russia	10	436	299	194	187	61	29	623
S. I. Shah United States	13	294 0.7×	252 0.8×	123 0.6×	142 0.8×	84 1.4×	21	508
R. Baquero Mexico	14	367 0.8×	298 1.0×	174 0.9×	212 1.1×	157 2.6×	65	670
V. V. Maltsev Russia	12	322 0.7×	305 1.0×	196 1.0×	216 1.2×	63 1.0×	71	592
K. B. Joshi India	11	330 0.8×	148 0.5×	97 0.5×	115 0.6×	61 1.0×	70	427
B. Bennecer Algeria	15	365 0.8×	164 0.5×	215 1.1×	127 0.7×	111 1.8×	33	518
L. G. Wang United States	7	388 0.9×	202 0.7×	145 0.7×	89 0.5×	48 0.8×	7	457
Dahu Chang China	12	394 0.9×	271 0.9×	75 0.4×	138 0.7×	29 0.5×	22	558
K. Osuch South Africa	13	604 1.4×	197 0.7×	227 1.2×	202 1.1×	120 2.0×	40	745
B. T. Melekh Russia	13	474 1.1×	244 0.8×	178 0.9×	87 0.5×	156 2.6×	39	637

Countries citing papers authored by V. G. Tyuterev

Since Specialization

Citations

This map shows the geographic impact of V. G. Tyuterev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. G. Tyuterev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. G. Tyuterev more than expected).

Fields of papers citing papers by V. G. Tyuterev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. G. Tyuterev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. G. Tyuterev. The network helps show where V. G. Tyuterev may publish in the future.

Co-authorship network of co-authors of V. G. Tyuterev

This figure shows the co-authorship network connecting the top 25 collaborators of V. G. Tyuterev. A scholar is included among the top collaborators of V. G. Tyuterev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. G. Tyuterev. V. G. Tyuterev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tyuterev, V. G., et al.. (2016). Intervalley scattering of electrons by short-wave phonons in (GaAs)8(AlAs)8(001) superlattice. Superlattices and Microstructures. 93. 280–289. 2 indexed citations

Tyuterev, V. G., et al.. (2014). Hole-Phonon Relaxation and Photocatalytic Properties of Titanium Dioxide and Zinc Oxide: First-Principles Approach. International Journal of Photoenergy. 2014. 1–12. 4 indexed citations

Tyuterev, V. G., V. P. Zhukov, P. M. Échenique, & Е. В. Чулков. (2014). Relaxation of highly excited carriers in wide-gap semiconductors. Journal of Physics Condensed Matter. 27(2). 25801–25801. 1 indexed citations

Tyuterev, V. G., et al.. (2014). Electron-phonon interaction in short-period (GaAs) m (AlAs) n (001) superlattices. Semiconductors. 48(3). 320–331. 2 indexed citations

Sjakste, Jelena, et al.. (2013). Ab initio study of the effects of pressure and strain on electron–phonon coupling in IV and III–V semiconductors. physica status solidi (b). 250(4). 716–720. 7 indexed citations

Zhukov, V. P. & V. G. Tyuterev. (2012). Electronic band structure and distribution of excited electrons in the conduction band of anatase doped with boron, nitrogen, and carbon. Physics of the Solid State. 54(11). 2173–2181. 3 indexed citations

Zhukov, V. P., V. G. Tyuterev, & Е. В. Чулков. (2012). Electron–phonon relaxation and excited electron distribution in zinc oxide and anatase. Journal of Physics Condensed Matter. 24(40). 405802–405802. 11 indexed citations

Wang, Zhao, Shidong Wang, Nathalie Vast, et al.. (2011). Thermoelectric transport properties of silicon: Toward anab initioapproach. Physical Review B. 83(20). 49 indexed citations

Tyuterev, V. G., Jelena Sjakste, & Nathalie Vast. (2010). Theoretical intrinsic lifetime limit of shallow donor states in silicon. Physical Review B. 81(24). 19 indexed citations

10.

Tyuterev, V. G., et al.. (2010). Intervalley electron scattering by phonons in (GaAs) m (AlAs) n (001) ultrathin superlattices. Physics of the Solid State. 52(8). 1606–1614. 3 indexed citations

11.

Tyuterev, V. G., et al.. (2009). Ab initio calculations of the deformation potentials for intervalley phonon-assisted transitions in А III В V crystals with sphalerite structure. Russian Physics Journal. 52(7). 742–748. 5 indexed citations

12.

Tyuterev, V. G., et al.. (2009). Ab initio calculation of the deformation potentials for intervalley phonons in silicon. Physics of the Solid State. 51(6). 1110–1113. 3 indexed citations

13.

Sjakste, Jelena, Nathalie Vast, & V. G. Tyuterev. (2007). Ab initio study of electron–phonon coupling and excitonic linewidth in GaAs under pressure and in GaP. Journal of Luminescence. 128(5-6). 1004–1006. 3 indexed citations

14.

Sjakste, Jelena, Nathalie Vast, & V. G. Tyuterev. (2007). Ab initioMethod for Calculating Electron-Phonon Scattering Times in Semiconductors: Application to GaAs and GaP. Physical Review Letters. 99(23). 236405–236405. 59 indexed citations

15.

Sjakste, Jelena, V. G. Tyuterev, & Nathalie Vast. (2006). Intervalley scattering in GaAs: ab initio calculation of the effective parameters for Monte Carlo simulations. Applied Physics A. 86(3). 301–307. 18 indexed citations

16.

Sjakste, Jelena, V. G. Tyuterev, & Nathalie Vast. (2006). Ab initiostudy ofΓ−Xintervalley scattering in GaAs under pressure. Physical Review B. 74(23). 26 indexed citations

17.

Tyuterev, V. G., et al.. (2006). Intervalley electron scattering by phonons in (AlAs)1(GaAs)3(001) superlattices. Physics of the Solid State. 48(1). 129–138. 3 indexed citations

18.

Tyuterev, V. G., et al.. (1996). Intervalley deformation potentials in (AlAs)1(GaAs)1(001) superlattice. Physica B Condensed Matter. 228(3-4). 319–328. 5 indexed citations

19.

Tyuterev, V. G., et al.. (1992). Lattice dynamics, thermodynamic and elastic properties of CdGeAs2. Il Nuovo Cimento D. 14(11). 1097–1103. 9 indexed citations

20.

Поплавной, А. С. & V. G. Tyuterev. (1973). Selection rule for inelastic neutron scattering in crystals with chalcopyrite and famatinite structure. Russian Physics Journal. 16(5). 707–710. 1 indexed citations

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