V. A. Dravin

648 total citations
70 papers, 543 citations indexed

About

V. A. Dravin is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. A. Dravin has authored 70 papers receiving a total of 543 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Materials Chemistry, 25 papers in Electrical and Electronic Engineering and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. A. Dravin's work include Diamond and Carbon-based Materials Research (26 papers), Ion-surface interactions and analysis (12 papers) and Silicon Nanostructures and Photoluminescence (11 papers). V. A. Dravin is often cited by papers focused on Diamond and Carbon-based Materials Research (26 papers), Ion-surface interactions and analysis (12 papers) and Silicon Nanostructures and Photoluminescence (11 papers). V. A. Dravin collaborates with scholars based in Russia, Belarus and Germany. V. A. Dravin's co-authors include А. В. Хомич, R.A. Khmelnitskiy, A. A. Gippius, R. A. Khmelnitsky, А. В. Двуреченский, Р. А. Хмельницкий, A. I. Yakimov, A. N. Georgobiani, Victor Ralchenko and И. И. Власов and has published in prestigious journals such as Journal of Applied Physics, Scientific Reports and Journal of Physics Condensed Matter.

In The Last Decade

V. A. Dravin

62 papers receiving 529 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. A. Dravin Russia	12	410	177	153	101	94	70	543
J. Steinbeck United States	11	266 0.6×	80 0.5×	107 0.7×	52 0.5×	61 0.6×	27	457
Roman Shayduk Germany	17	325 0.8×	213 1.2×	49 0.3×	119 1.2×	128 1.4×	31	592
M. A. Plano United States	14	563 1.4×	283 1.6×	105 0.7×	33 0.3×	137 1.5×	23	688
Tadao Iwata Japan	16	508 1.2×	150 0.8×	194 1.3×	32 0.3×	36 0.4×	42	648
Matthew Pelliccione United States	7	255 0.6×	159 0.9×	114 0.7×	31 0.3×	32 0.3×	12	465
Robert D. McKeag United Kingdom	13	392 1.0×	195 1.1×	96 0.6×	51 0.5×	35 0.4×	24	475
G. Lucas Switzerland	14	427 1.0×	197 1.1×	56 0.4×	41 0.4×	36 0.4×	20	644
N.V. Doan France	16	393 1.0×	80 0.5×	145 0.9×	68 0.7×	49 0.5×	40	598
Jelena Sjakste France	19	626 1.5×	225 1.3×	39 0.3×	74 0.7×	121 1.3×	41	891
M.C. Carmo Portugal	18	670 1.6×	513 2.9×	66 0.4×	130 1.3×	44 0.5×	80	905

Countries citing papers authored by V. A. Dravin

Since Specialization

Citations

This map shows the geographic impact of V. A. Dravin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. A. Dravin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. A. Dravin more than expected).

Fields of papers citing papers by V. A. Dravin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. A. Dravin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. A. Dravin. The network helps show where V. A. Dravin may publish in the future.

Co-authorship network of co-authors of V. A. Dravin

This figure shows the co-authorship network connecting the top 25 collaborators of V. A. Dravin. A scholar is included among the top collaborators of V. A. Dravin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. A. Dravin. V. A. Dravin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kudryashov, S. I., A. А. Ushakov, Yu. G. Goncharov, et al.. (2025). Characteristic timescales of carrier dynamics in sulfur-hyperdoped silicon probed by femtosecond laser optical pump/THz probe pulses. Materials Science in Semiconductor Processing. 199. 109880–109880.

Маслаков, К. И., Tolganay B. Egorova, M. A. Tarkhov, et al.. (2025). High-energy argon implantation in carbon nanowalls as a way to produce electrodes for supercapacitor applications. Scientific Reports. 15(1). 20959–20959.

Kovalev, M. S., Alena Nastulyavichus, С. С. Пушкарев, et al.. (2024). Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing. Materials Science in Semiconductor Processing. 184. 108830–108830. 2 indexed citations

Khmelnitsky, R. A., et al.. (2023). Hypersound tomography of graphitized layers buried into diamond matrix. Photoacoustics. 32. 100528–100528.

Dravin, V. A., et al.. (2015). Ion implantation of erbium into polycrystalline cadmium telluride. Semiconductors. 49(5). 630–633.

Хомич, А. В., Р. А. Хмельницкий, Xiaojun Hu, et al.. (2013). Radiation Damage Effects on Optical, Electrical, and Thermophysical Properties of CVD Diamond Films. Journal of Applied Spectroscopy. 80(5). 707–714. 15 indexed citations

Хмельницкий, Р. А., et al.. (2007). Bolometric detector embedded in a polycrystalline diamond grown by chemical vapor deposition. Physics of the Solid State. 49(4). 654–659. 13 indexed citations

Khmelnitsky, R. A., et al.. (2007). Fast bolometric sensor built-in into polycrystalline CVD diamond. Journal of Physics Conference Series. 92. 12181–12181. 1 indexed citations

Georgobiani, A. N., et al.. (2003). p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 514(1-3). 117–121. 34 indexed citations

10.

Bagaev, V. S., et al.. (2002). Propagation of acoustic phonons across the interfaces in CdTe and Si/CVD-diamond and quasi-two-dimensional phonon wind in CdTe/ZnTe quantum wells. Physica B Condensed Matter. 316-317. 243–246. 5 indexed citations

11.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2002). Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering. Journal of Electronic Materials. 31(5). 384–390. 6 indexed citations

12.

Gippius, A. A., R. A. Khmelnitsky, V. A. Dravin, & А. В. Хомич. (2001). Defect-induced graphitisation in diamond implanted with light ions. Physica B Condensed Matter. 308-310. 573–576. 22 indexed citations

13.

Dravin, V. A., et al.. (2000). Polariton-like interaction between microwaves and electronic subsystem of metal oxide superconductor. Physica C Superconductivity. 341-348. 2749–2750. 4 indexed citations

14.

Georgobiani, A. N., et al.. (1999). Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 426(1). 164–168. 6 indexed citations

15.

Denisenko, A., A.M. Zaitsev, V.S. Varichenko, et al.. (1998). Electrical and optical properties of light-emitting p–i–n diodes on diamond. Journal of Applied Physics. 84(11). 6127–6134. 15 indexed citations

16.

Dravin, V. A., et al.. (1998). Ion implantation of porous gallium phosphide. Semiconductors. 32(8). 886–890. 7 indexed citations

17.

Dravin, V. A., et al.. (1996). Microstrip-stabilized semiconductor quantum-well generator for millimeter and submillimeter wavelength range. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2842. 319–319. 1 indexed citations

18.

Хмельницкий, Р. А., et al.. (1996). Ion-implanted buried layer in diamond as a source of ballistic phonons at liquid-helium temperatures. Journal of Experimental and Theoretical Physics Letters. 64(4). 298–300. 1 indexed citations

19.

Dravin, V. A., et al.. (1993). Radiation defects and electrical properties of silicon layers containing Sb and As implanted with Si+ ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 73(4). 503–506. 8 indexed citations

20.

Двуреченский, А. В., et al.. (1987). Wide coulomb gap in localized states of 3d-metals in amorphous silicon. Journal of Non-Crystalline Solids. 90(1-3). 111–114. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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