Toshiaki Ono

1.3k total citations
55 papers, 989 citations indexed

About

Toshiaki Ono is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Toshiaki Ono has authored 55 papers receiving a total of 989 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in Toshiaki Ono's work include Silicon and Solar Cell Technologies (27 papers), Semiconductor materials and interfaces (12 papers) and Thin-Film Transistor Technologies (11 papers). Toshiaki Ono is often cited by papers focused on Silicon and Solar Cell Technologies (27 papers), Semiconductor materials and interfaces (12 papers) and Thin-Film Transistor Technologies (11 papers). Toshiaki Ono collaborates with scholars based in Japan, United States and Australia. Toshiaki Ono's co-authors include Hideki Asada, Asahi Ishihara, Takao Kitamura, Masataka Hourai, Koji Sueoka, Hiroyuki Ohtsubo, Yasuya Ohmori, Kiyomichi Nakai, Masaki Tanaka and Hisashi Katahama and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Toshiaki Ono

48 papers receiving 947 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Toshiaki Ono Japan 12 757 516 162 147 101 55 989
K. Perez United States 15 316 0.4× 609 1.2× 51 0.3× 135 0.9× 45 0.4× 43 860
T J Martin United Kingdom 12 372 0.5× 471 0.9× 49 0.3× 68 0.5× 38 0.4× 19 534
S. K. Wong United States 14 486 0.6× 780 1.5× 78 0.5× 81 0.6× 28 0.3× 35 845
R. F. Gandy United States 17 419 0.6× 725 1.4× 145 0.9× 92 0.6× 19 0.2× 56 797
P. Piovesan Italy 17 483 0.6× 723 1.4× 77 0.5× 46 0.3× 18 0.2× 55 771
J. Rogers United States 9 248 0.3× 443 0.9× 70 0.4× 258 1.8× 17 0.2× 33 590
S. Deiker United States 10 546 0.7× 165 0.3× 119 0.7× 106 0.7× 25 0.2× 27 626
C. Nührenberg Germany 17 569 0.8× 800 1.6× 44 0.3× 45 0.3× 16 0.2× 58 844
A. Bécoulet France 21 473 0.6× 1.2k 2.4× 242 1.5× 67 0.5× 28 0.3× 69 1.3k
J. Hillairet France 17 233 0.3× 630 1.2× 333 2.1× 152 1.0× 12 0.1× 119 896

Countries citing papers authored by Toshiaki Ono

Since Specialization
Citations

This map shows the geographic impact of Toshiaki Ono's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toshiaki Ono with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toshiaki Ono more than expected).

Fields of papers citing papers by Toshiaki Ono

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Toshiaki Ono. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toshiaki Ono. The network helps show where Toshiaki Ono may publish in the future.

Co-authorship network of co-authors of Toshiaki Ono

This figure shows the co-authorship network connecting the top 25 collaborators of Toshiaki Ono. A scholar is included among the top collaborators of Toshiaki Ono based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Toshiaki Ono. Toshiaki Ono is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hourai, Masataka, et al.. (2024). Defect behavior during growth of heavily phosphorus-doped Czochralski silicon crystals. I. Experimental study. Journal of Applied Physics. 136(5). 1 indexed citations
2.
Ono, Toshiaki, et al.. (2022). Effect of ion implantation on mechanical strength of silicon wafers. Japanese Journal of Applied Physics. 61(4). 45503–45503.
3.
4.
Lim, Sze Pei, et al.. (2021). Voids Inspection Capability Study in First-Level Interconnects for Flip Chip Packages. 47–48. 2 indexed citations
5.
Tanaka, Masaki, et al.. (2021). Tensile Deformation of Si Single Crystals with Easy Glide Orientation. MATERIALS TRANSACTIONS. 62(7). 975–981. 4 indexed citations
6.
Ono, Toshiaki, et al.. (2020). The Critical Shear Stress for Slip Generation due to Scratches in Silicon Wafers. ECS Journal of Solid State Science and Technology. 9(5). 55012–55012. 4 indexed citations
7.
Ono, Toshiaki, et al.. (2020). Effect of Surface Oxygen Concentration on Wafer Strength in Floating Zone Si Wafers. ECS Journal of Solid State Science and Technology. 9(10). 104002–104002. 1 indexed citations
8.
Ono, Toshiaki, et al.. (2020). Formation of thermal donor enhanced by oxygen precipitation in silicon crystal. AIP Advances. 10(4). 9 indexed citations
9.
Ono, Toshiaki, et al.. (2019). Influence of impurities on mechanical strength of silicon crystal. Japanese Journal of Applied Physics. 58(4). 45507–45507. 1 indexed citations
10.
Ono, Toshiaki, et al.. (2019). Formulation of mobile dislocation density in oxygen-precipitated silicon by crystal plasticity model. Japanese Journal of Applied Physics. 58(3). 31002–31002. 2 indexed citations
11.
Matsumoto, Koji, Toshiaki Ono, Yoshio Honda, et al.. (2018). Detailed study of effects of duration of pre-AlN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition. Japanese Journal of Applied Physics. 57(9). 91001–91001. 5 indexed citations
12.
Matsumoto, Koji, Toshiaki Ono, Yoshio Honda, et al.. (2017). Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching. physica status solidi (b). 255(5). 6 indexed citations
13.
Ono, Toshiaki, Asahi Ishihara, & Hideki Asada. (2017). Gravitomagnetic bending angle of light with finite-distance corrections in stationary axisymmetric spacetimes. Physical review. D. 96(10). 145 indexed citations
14.
Ishihara, Asahi, et al.. (2017). Finite-distance corrections to the gravitational bending angle of light in the strong deflection limit. Physical review. D. 95(4). 138 indexed citations
15.
Nakamura, Kozo, et al.. (2011). Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations. Journal of the Japan Institute of Metals and Materials. 75(12). 657–664. 9 indexed citations
16.
Ono, Toshiaki, Yasuo Komoda, & Masayuki Itagaki. (2007). Role of Acetonitrile in Via-Filling by Copper Electrodeposition. Journal of The Surface Finishing Society of Japan. 58(12). 851–857. 1 indexed citations
17.
Ono, Toshiaki, Yasuo Komoda, & Masayuki Itagaki. (2007). Effect of Acetonitrile on Crystal Orientation of Copper Film Electrodeposited from Acid Cupric Sulfate Electrolyte. Journal of The Surface Finishing Society of Japan. 58(8). 482–488. 2 indexed citations
18.
Matsumura, Yu, et al.. (2004). EFFECTIVENESS OF DOUBLE IRRADIATION WITH Er:YAG LASER CONCERNING TENSILE BOND STRENGTH. 17. 23–27. 1 indexed citations
19.
Ono, Toshiaki, et al.. (1999). Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers. Applied Physics Letters. 74(24). 3648–3650. 17 indexed citations
20.
Ono, Toshiaki, et al.. (1997). Behavior of Defects in Heavily Boron Doped Czochralski Silicon. Japanese Journal of Applied Physics. 36(3A). L249–L249. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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