Stefan Tinck

532 total citations
23 papers, 451 citations indexed

About

Stefan Tinck is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Stefan Tinck has authored 23 papers receiving a total of 451 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 12 papers in Mechanics of Materials and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Stefan Tinck's work include Plasma Diagnostics and Applications (19 papers), Semiconductor materials and devices (14 papers) and Metal and Thin Film Mechanics (12 papers). Stefan Tinck is often cited by papers focused on Plasma Diagnostics and Applications (19 papers), Semiconductor materials and devices (14 papers) and Metal and Thin Film Mechanics (12 papers). Stefan Tinck collaborates with scholars based in Belgium, France and United States. Stefan Tinck's co-authors include Annemie Bogaerts, Werner Boullart, Erik C. Neyts, Kenn Foubert, Emmy Tuenter, Yury Gorbanev, Paul Cos, Christof Verlackt, Thomas Tillocher and Rémi Dussart and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry C.

In The Last Decade

Stefan Tinck

23 papers receiving 434 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Stefan Tinck Belgium 12 399 143 130 104 42 23 451
B. P. Aragon United States 9 536 1.3× 92 0.6× 279 2.1× 86 0.8× 72 1.7× 14 581
P. Kurunczi United States 12 362 0.9× 188 1.3× 107 0.8× 108 1.0× 108 2.6× 18 476
A. Brockhaus Germany 12 371 0.9× 174 1.2× 157 1.2× 81 0.8× 83 2.0× 24 423
Kazuki Denpoh Japan 12 448 1.1× 124 0.9× 184 1.4× 75 0.7× 129 3.1× 34 497
Akinori Oda Japan 10 234 0.6× 180 1.3× 50 0.4× 207 2.0× 34 0.8× 41 425
R. Boswell Australia 10 520 1.3× 265 1.9× 93 0.7× 68 0.7× 86 2.0× 18 561
A. Schwabedissen Germany 11 333 0.8× 113 0.8× 175 1.3× 128 1.2× 73 1.7× 24 413
André Ricard France 10 353 0.9× 189 1.3× 81 0.6× 67 0.6× 135 3.2× 12 432
R M van der Horst Netherlands 11 384 1.0× 255 1.8× 120 0.9× 99 1.0× 94 2.2× 16 462
А. К. Шуаибов Ukraine 9 296 0.7× 234 1.6× 43 0.3× 85 0.8× 35 0.8× 142 383

Countries citing papers authored by Stefan Tinck

Since Specialization
Citations

This map shows the geographic impact of Stefan Tinck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stefan Tinck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stefan Tinck more than expected).

Fields of papers citing papers by Stefan Tinck

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stefan Tinck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stefan Tinck. The network helps show where Stefan Tinck may publish in the future.

Co-authorship network of co-authors of Stefan Tinck

This figure shows the co-authorship network connecting the top 25 collaborators of Stefan Tinck. A scholar is included among the top collaborators of Stefan Tinck based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stefan Tinck. Stefan Tinck is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gorbanev, Yury, Christof Verlackt, Stefan Tinck, et al.. (2018). Combining experimental and modelling approaches to study the sources of reactive species induced in water by the COST RF plasma jet. Physical Chemistry Chemical Physics. 20(4). 2797–2808. 74 indexed citations
2.
Tinck, Stefan, Thomas Tillocher, Violeta Georgieva, et al.. (2017). Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2 plasmas. Plasma Processes and Polymers. 14(9). 11 indexed citations
3.
Zhang, Quan‐Zhi, Stefan Tinck, Jean‐François de Marneffe, Liping Zhang, & Annemie Bogaerts. (2017). Mechanisms for plasma cryogenic etching of porous materials. Applied Physics Letters. 111(17). 9 indexed citations
4.
Ishikawa, Kenji, Kazuhiro Karahashi, Takanori Ichiki, et al.. (2017). Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?. Japanese Journal of Applied Physics. 56(6S2). 06HA02–06HA02. 44 indexed citations
5.
Tinck, Stefan & Annemie Bogaerts. (2016). Computational study of the CF4 /CHF3 / H2 /Cl2 /O2 /HBr gas phase plasma chemistry. Journal of Physics D Applied Physics. 49(19). 195203–195203. 11 indexed citations
6.
Tinck, Stefan, Thomas Tillocher, Rémi Dussart, Erik C. Neyts, & Annemie Bogaerts. (2016). Elucidating the effects of gas flow rate on an SF6inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation. Journal of Physics D Applied Physics. 49(38). 385201–385201. 1 indexed citations
7.
Tinck, Stefan, Thomas Tillocher, Rémi Dussart, & Annemie Bogaerts. (2015). Cryogenic etching of silicon with SF6inductively coupled plasmas: a combined modelling and experimental study. Journal of Physics D Applied Physics. 48(15). 155204–155204. 26 indexed citations
8.
Zhang, Yu‐Ru, Stefan Tinck, Peter De Schepper, You‐Nian Wang, & Annemie Bogaerts. (2015). Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 33(2). 10 indexed citations
9.
Tinck, Stefan, Erik C. Neyts, & Annemie Bogaerts. (2014). Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching. The Journal of Physical Chemistry C. 118(51). 30315–30324. 31 indexed citations
10.
Gul, Banat, Stefan Tinck, Peter De Schepper, Aman‐ur Rehman, & Annemie Bogaerts. (2014). Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching. Journal of Physics D Applied Physics. 48(2). 25202–25202. 11 indexed citations
11.
Laer, Koen Van, et al.. (2013). Etching of low-kmaterials for microelectronics applications by means of a N2/H2plasma: modeling and experimental investigation. Plasma Sources Science and Technology. 22(2). 25011–25011. 20 indexed citations
12.
Tinck, Stefan, Peter De Schepper, & Annemie Bogaerts. (2013). Numerical Investigation of SiO2 Coating Deposition in Wafer Processing Reactors with SiCl4/O2/Ar Inductively Coupled Plasmas. Plasma Processes and Polymers. 10(8). 714–730. 5 indexed citations
13.
Tinck, Stefan & Annemie Bogaerts. (2012). Modeling SiH4/O2/Ar Inductively Coupled Plasmas Used for Filling of Microtrenches in Shallow Trench Isolation (STI). Plasma Processes and Polymers. 9(5). 522–539. 9 indexed citations
14.
Tinck, Stefan & Annemie Bogaerts. (2011). Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition. Plasma Sources Science and Technology. 20(1). 15008–15008. 19 indexed citations
15.
Tinck, Stefan, Annemie Bogaerts, & Denis Shamiryan. (2011). Simultaneous Etching and Deposition Processes during the Etching of Silicon with a Cl2/O2/Ar Inductively Coupled Plasma. Plasma Processes and Polymers. 8(6). 490–499. 7 indexed citations
16.
Tinck, Stefan, Werner Boullart, & Annemie Bogaerts. (2011). Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2chamber wall coating. Plasma Sources Science and Technology. 20(4). 45012–45012. 34 indexed citations
17.
Shamiryan, Denis, et al.. (2010). Influence of the Top Chamber Window Temperature on the STI Etch Process. ECS Transactions. 27(1). 731–736. 3 indexed citations
18.
Gou, Fujun, et al.. (2010). Molecular dynamics simulations of Cl+ etching on a Si(100) surface. Journal of Applied Physics. 107(11). 18 indexed citations
19.
Bogaerts, Annemie, Christophe De Bie, Violeta Georgieva, et al.. (2010). Modeling of the plasma chemistry and plasma–surface interactions in reactive plasmas. Pure and Applied Chemistry. 82(6). 1283–1299. 17 indexed citations
20.
Tinck, Stefan, Werner Boullart, & Annemie Bogaerts. (2009). Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments. Journal of Physics D Applied Physics. 42(9). 95204–95204. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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