Shubham Mondal

1.0k total citations
52 papers, 704 citations indexed

About

Shubham Mondal is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Shubham Mondal has authored 52 papers receiving a total of 704 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 28 papers in Biomedical Engineering and 28 papers in Materials Chemistry. Recurrent topics in Shubham Mondal's work include Acoustic Wave Resonator Technologies (27 papers), GaN-based semiconductor devices and materials (22 papers) and Ferroelectric and Piezoelectric Materials (13 papers). Shubham Mondal is often cited by papers focused on Acoustic Wave Resonator Technologies (27 papers), GaN-based semiconductor devices and materials (22 papers) and Ferroelectric and Piezoelectric Materials (13 papers). Shubham Mondal collaborates with scholars based in United States, India and France. Shubham Mondal's co-authors include Ding Wang, Zetian Mi, Ping Wang, Mingtao Hu, Tao Ma, Yuanpeng Wu, Jiangnan Liu, Danhao Wang, Elaheh Ahmadi and Subhajit Mohanty and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Advanced Materials and Angewandte Chemie International Edition.

In The Last Decade

Shubham Mondal

44 papers receiving 700 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Shubham Mondal United States	14	477	385	319	316	207	52	704
Pariasadat Musavigharavi United States	13	453 0.9×	454 1.2×	161 0.5×	432 1.4×	162 0.8×	19	728
Jeffrey Zheng United States	10	353 0.7×	374 1.0×	130 0.4×	331 1.0×	140 0.7×	11	561
Mingtao Hu United States	12	332 0.7×	243 0.6×	207 0.6×	194 0.6×	142 0.7×	19	449
Liang Jing China	10	177 0.4×	170 0.4×	210 0.7×	204 0.6×	47 0.2×	18	406
Ka Ming Wong Hong Kong	15	178 0.4×	222 0.6×	471 1.5×	474 1.5×	37 0.2×	28	707
Yanhui Xing China	13	101 0.2×	390 1.0×	227 0.7×	245 0.8×	55 0.3×	44	597
Bei Ma Japan	10	106 0.2×	176 0.5×	251 0.8×	112 0.4×	53 0.3×	32	388
Ch. Foerster Germany	11	295 0.6×	134 0.3×	207 0.6×	210 0.7×	152 0.7×	13	476
Jan Gülink Germany	8	153 0.3×	135 0.4×	242 0.8×	218 0.7×	19 0.1×	16	408
Qi Hang Qin Finland	7	145 0.3×	166 0.4×	72 0.2×	234 0.7×	38 0.2×	10	489

Countries citing papers authored by Shubham Mondal

Since Specialization

Citations

This map shows the geographic impact of Shubham Mondal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shubham Mondal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shubham Mondal more than expected).

Fields of papers citing papers by Shubham Mondal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shubham Mondal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shubham Mondal. The network helps show where Shubham Mondal may publish in the future.

Co-authorship network of co-authors of Shubham Mondal

This figure shows the co-authorship network connecting the top 25 collaborators of Shubham Mondal. A scholar is included among the top collaborators of Shubham Mondal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shubham Mondal. Shubham Mondal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zhang, Jie, Jiangnan Liu, Shubham Mondal, et al.. (2025). Self-Heating Effects and Thermal Mitigation Strategies in Ferroelectric ScAlN/GaN HEMTs. IEEE Electron Device Letters. 46(12). 2373–2376.

Zhang, Jie, Md. Tanvir Hasan, Ding Wang, et al.. (2025). High-temperature memory devices based on ferroelectric ScAlN/AlGaN/GaN high-electron-mobility transistors. Device. 3(9). 100845–100845. 1 indexed citations

Zhang, Jie, Md. Tanvir Hasan, Shubham Mondal, et al.. (2025). Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability. Applied Physics Letters. 127(2).

Liu, Jiangnan, Ding Wang, Md. Tanvir Hasan, et al.. (2025). E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks. Applied Physics Letters. 126(1). 3 indexed citations

Mondal, Shubham, Jinghan Gao, Jiangnan Liu, et al.. (2025). Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing. Nature Communications. 16(1). 4130–4130. 3 indexed citations

Mondal, Shubham, et al.. (2025). A temperature-insensitive nonlinear silicon bulk acoustic oscillator. Applied Physics Letters. 126(13).

Hasan, Md. Tanvir, et al.. (2025). Atomic layer deposition and characterization of scandium aluminum nitride. Applied Physics Letters. 127(3).

Mondal, Shubham, et al.. (2024). Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition. Applied Physics Letters. 124(24).

Mondal, Shubham, et al.. (2024). Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy. APL Materials. 12(11). 1 indexed citations

10.

Wang, Danhao, Ding Wang, Ding Wang, et al.. (2023). On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/GaN heterostructures. Applied Surface Science. 628. 157337–157337. 23 indexed citations

11.

Wang, Ping, Ding Wang, Shubham Mondal, et al.. (2023). Dawn of nitride ferroelectric semiconductors: from materials to devices. Semiconductor Science and Technology. 38(4). 43002–43002. 70 indexed citations

12.

Mondal, Shubham, Ding Wang, Jiangnan Liu, et al.. (2023). ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel. 1–2. 1 indexed citations

13.

Hu, Mingtao, Ping Wang, Ding Wang, et al.. (2023). Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties. APL Materials. 11(12). 4 indexed citations

14.

Wang, Ding, Ping Wang, Shubham Mondal, et al.. (2023). Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers. Applied Physics Letters. 123(10). 11 indexed citations

15.

Wang, Ding, Ping Wang, Jiangnan Liu, et al.. (2023). Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT. Applied Physics Letters. 122(9). 54 indexed citations

16.

Wang, Ding, Shubham Mondal, Mingtao Hu, et al.. (2023). Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy. Applied Physics Letters. 122(5). 57 indexed citations

17.

Wang, Ding, Shubham Mondal, Jiangnan Liu, et al.. (2023). Ferroelectric YAlN grown by molecular beam epitaxy. Applied Physics Letters. 123(3). 47 indexed citations

18.

Wang, Danhao, Danhao Wang, Shubham Mondal, et al.. (2023). Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures. Applied Surface Science. 637. 157893–157893. 15 indexed citations

19.

Mondal, Shubham, et al.. (2023). A comparative study of metaheuristics algorithms based on their performance of complex benchmark problems. Decision Making Applications in Management and Engineering. 6(1). 341–364. 7 indexed citations

20.

Ghadi, Hemant, et al.. (2020). Improving optical properties and controlling defect-bound states in ZnMgO thin films through ultraviolet–ozone annealing. Thin Solid Films. 708. 138112–138112. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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