Shenyuan Yang

2.3k total citations
64 papers, 1.8k citations indexed

About

Shenyuan Yang is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Shenyuan Yang has authored 64 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Materials Chemistry, 21 papers in Electrical and Electronic Engineering and 14 papers in Condensed Matter Physics. Recurrent topics in Shenyuan Yang's work include Graphene research and applications (17 papers), GaN-based semiconductor devices and materials (14 papers) and 2D Materials and Applications (14 papers). Shenyuan Yang is often cited by papers focused on Graphene research and applications (17 papers), GaN-based semiconductor devices and materials (14 papers) and 2D Materials and Applications (14 papers). Shenyuan Yang collaborates with scholars based in China, United States and Singapore. Shenyuan Yang's co-authors include Shengbai Zhang, Mina Yoon, Enge Wang, Jeffrey B. Neaton, David Prendergast, Christian Hicke, David B. Geohegan, Peng Gao, Zhaolong Chen and Tongbo Wei and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

Shenyuan Yang

62 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shenyuan Yang China 19 1.5k 676 392 319 241 64 1.8k
Hanako Okuno France 24 1.6k 1.0× 787 1.2× 143 0.4× 407 1.3× 432 1.8× 122 2.2k
Wenhua Xue China 25 1.4k 0.9× 608 0.9× 88 0.2× 381 1.2× 240 1.0× 60 1.9k
Zhigang Song China 31 2.5k 1.6× 1.2k 1.8× 198 0.5× 433 1.4× 335 1.4× 108 3.2k
I. P. Nevirkovets United States 18 576 0.4× 400 0.6× 478 1.2× 466 1.5× 142 0.6× 92 1.4k
Xun Yang China 25 1.3k 0.9× 677 1.0× 129 0.3× 949 3.0× 361 1.5× 77 1.9k
V. Prasad India 22 1.1k 0.7× 451 0.7× 559 1.4× 916 2.9× 327 1.4× 136 2.0k
Huaiyong Li China 25 1.5k 1.0× 779 1.2× 58 0.1× 253 0.8× 137 0.6× 81 1.8k
S. Suzuki Japan 15 1.0k 0.7× 664 1.0× 113 0.3× 168 0.5× 273 1.1× 52 1.5k
James T. Griffiths United Kingdom 17 725 0.5× 745 1.1× 256 0.7× 191 0.6× 131 0.5× 37 1.2k
Shaoqing Xiao China 27 1.6k 1.0× 1.3k 1.9× 73 0.2× 164 0.5× 374 1.6× 114 2.2k

Countries citing papers authored by Shenyuan Yang

Since Specialization
Citations

This map shows the geographic impact of Shenyuan Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shenyuan Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shenyuan Yang more than expected).

Fields of papers citing papers by Shenyuan Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shenyuan Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shenyuan Yang. The network helps show where Shenyuan Yang may publish in the future.

Co-authorship network of co-authors of Shenyuan Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Shenyuan Yang. A scholar is included among the top collaborators of Shenyuan Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shenyuan Yang. Shenyuan Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Lü, Qin, et al.. (2024). Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects. Nanomaterials. 14(23). 1960–1960. 1 indexed citations
3.
Liang, Dongdong, Bei Jiang, Zhetong Liu, et al.. (2024). Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration. Advanced Science. 11(20). e2305576–e2305576. 7 indexed citations
4.
Wang, Lulu, Shenyuan Yang, Fan Zhou, et al.. (2024). Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode (Small 7/2024). Small. 20(7). 1 indexed citations
5.
Wang, Lulu, Shenyuan Yang, Fan Zhou, et al.. (2023). Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode. Small. 20(7). e2306132–e2306132. 12 indexed citations
6.
Wang, Lulu, Shenyuan Yang, Yaqi Gao, et al.. (2023). Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes. ACS Applied Materials & Interfaces. 15(19). 23501–23511. 12 indexed citations
7.
Yang, Zhi, Shenyuan Yang, Zheng Dai, et al.. (2023). Construction of 2D/2D Ti3C2T MXene/CdS heterojunction with photothermal effect for efficient photocatalytic hydrogen production. Journal of Material Science and Technology. 171. 1–9. 59 indexed citations
8.
Chang, Hongliang, Zhetong Liu, Shenyuan Yang, et al.. (2022). Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light Science & Applications. 11(1). 88–88. 41 indexed citations
9.
Liu, Zhiqiang, Bingyao Liu, Yue Yin, et al.. (2022). Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD. Small. 18(16). e2200057–e2200057. 13 indexed citations
10.
Chen, Zhaolong, Hongliang Chang, Ting Cheng, et al.. (2020). Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes. Advanced Functional Materials. 30(31). 33 indexed citations
11.
Chang, Hongliang, Zhaolong Chen, Bingyao Liu, et al.. (2020). Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes. Advanced Science. 7(15). 2001272–2001272. 50 indexed citations
12.
Zhang, Xiang, Zhaolong Chen, Hongliang Chang, et al.. (2020). Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. Journal of Visualized Experiments. 8 indexed citations
13.
Chang, Hongliang, Zhaolong Chen, Weijiang Li, et al.. (2019). Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate. Applied Physics Letters. 114(9). 82 indexed citations
14.
Chen, Zhaolong, Zhiqiang Liu, Tongbo Wei, et al.. (2019). Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene. Advanced Materials. 31(23). e1807345–e1807345. 135 indexed citations
15.
Dou, Zhipeng, Zhaolong Chen, Ning Li, et al.. (2019). Atomic mechanism of strong interactions at the graphene/sapphire interface. Nature Communications. 10(1). 5013–5013. 45 indexed citations
16.
Chen, Zhaolong, Xiang Zhang, Zhipeng Dou, et al.. (2018). High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. Advanced Materials. 30(30). e1801608–e1801608. 99 indexed citations
17.
Liu, Jianmin, Xiyan Xu, Jie Wang, et al.. (2010). Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy. Nanoscale Research Letters. 5(8). 1340–1343. 18 indexed citations
18.
19.
Yang, Shenyuan, et al.. (2006). A multi-sensor target recognition model in a complex interference environment. 2. 878–883. 2 indexed citations
20.
Chen, Yanzhong, et al.. (2003). Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate. Semiconductor Science and Technology. 18(11). 955–959. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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