Seungmin Yeo

669 total citations
20 papers, 584 citations indexed

About

Seungmin Yeo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Seungmin Yeo has authored 20 papers receiving a total of 584 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Seungmin Yeo's work include Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (5 papers) and Advanced Memory and Neural Computing (5 papers). Seungmin Yeo is often cited by papers focused on Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (5 papers) and Advanced Memory and Neural Computing (5 papers). Seungmin Yeo collaborates with scholars based in South Korea, United States and India. Seungmin Yeo's co-authors include Soo‐Hyun Kim, Hyungjun Kim, Han‐Bo‐Ram Lee, Dip K. Nandi, Taehoon Cheon, Jaeyeong Heo, Soumyadeep Sinha, Hyungjun Kim, Ravindra N. Bulakhe and Jae‐Jin Shim and has published in prestigious journals such as Journal of The Electrochemical Society, ACS Applied Materials & Interfaces and The Journal of Physical Chemistry C.

In The Last Decade

Seungmin Yeo

20 papers receiving 576 citations

Peers

Seungmin Yeo

EEE

EOMM

RESE

Xiaokun Yang China

Abbas M. Selman Iraq

Berna Akgenç Türkiye

Gyu‐Jin Choi South Korea

Adam J. Simbeck United States

Ajinkya Bhorde India

Chin-Ching Lin Taiwan

Baojuan Dong China

Hanbyeol Jang South Korea

Praloy Mondal India

Xiaokun Yang China

Seungmin Yeo

331 ×0.8

EEE

304 ×0.8

235 ×1.5

EOMM

142 ×1.3

RESE

77 ×1.8

Citations per year, relative to Seungmin Yeo Seungmin Yeo (= 1×) peers Xiaokun Yang

Countries citing papers authored by Seungmin Yeo

Since Specialization

Citations

This map shows the geographic impact of Seungmin Yeo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seungmin Yeo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seungmin Yeo more than expected).

Fields of papers citing papers by Seungmin Yeo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seungmin Yeo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seungmin Yeo. The network helps show where Seungmin Yeo may publish in the future.

Co-authorship network of co-authors of Seungmin Yeo

This figure shows the co-authorship network connecting the top 25 collaborators of Seungmin Yeo. A scholar is included among the top collaborators of Seungmin Yeo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seungmin Yeo. Seungmin Yeo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lee, Ga Yeon, Seungmin Yeo, Bo Keun Park, et al.. (2023). Amidoxime-Containing Ti Precursors for Atomic Layer Deposition of TiN Thin Films with Suppressed Columnar Microstructure. Inorganic Chemistry. 62(11). 4680–4687. 2 indexed citations

Lee, Ga Yeon, Seungmin Yeo, Seong Ho Han, et al.. (2021). Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films. Inorganic Chemistry. 60(23). 17722–17732. 6 indexed citations

Hwang, Jeong Min, Seungmin Yeo, Seunghun Lee, et al.. (2021). Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity. Journal of Materials Chemistry C. 9(11). 3820–3825. 16 indexed citations

Yeo, Seungmin, et al.. (2019). Fully “Erase-free” Multi-Bit Operation in HfO₂-Based Resistive Switching Device. ACS Applied Materials & Interfaces. 11(8). 8234–8241. 16 indexed citations

Choi, Taejin, Seong Dae Kim, Seungmin Yeo, et al.. (2019). Rate performance enhancement of lithium-ion battery using precise thickness-controllable-carbon-coated titanium dioxide nanowire array electrode via atomic layer deposition. Electrochimica Acta. 334. 135596–135596. 9 indexed citations

Nandi, Dip K., Seungmin Yeo, Mohd Zahid Ansari, et al.. (2019). Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery. Electrochimica Acta. 322. 134766–134766. 18 indexed citations

Jung, Soonyoung, Dip K. Nandi, Seungmin Yeo, et al.. (2018). Phase-controlled growth of cobalt oxide thin films by atomic layer deposition. Surface and Coatings Technology. 337. 404–410. 26 indexed citations

Choi, Taejin, Seungmin Yeo, Jeong-Gyu Song, et al.. (2018). Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films. Surface and Coatings Technology. 344. 12–20. 10 indexed citations

Yeo, Seungmin, Dip K. Nandi, Rahul Ramesh, et al.. (2018). Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications. Applied Surface Science. 459. 596–605. 47 indexed citations

10.

Jung, Hanearl, Il‐Kwon Oh, Seungmin Yeo, et al.. (2017). Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 35(3). 6 indexed citations

11.

Nandi, Dip K., Sumanta Sahoo, Soumyadeep Sinha, et al.. (2017). Highly Uniform Atomic Layer-Deposited MoS₂@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for Supercapacitors. ACS Applied Materials & Interfaces. 9(46). 40252–40264. 127 indexed citations

12.

Yeo, Seungmin, et al.. (2017). Fabrication of single-phase SnS film by H2 annealing of amorphous SnSx prepared by atomic layer deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 35(3). 25 indexed citations

13.

Yeo, Seungmin, et al.. (2016). Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition. Applied Surface Science. 365. 160–165. 121 indexed citations

14.

Yeo, Seungmin, Jiyoon Park, Seung‐Joon Lee, et al.. (2015). Ruthenium and ruthenium dioxide thin films deposited by atomic layer deposition using a novel zero-valent metalorganic precursor, (ethylbenzene)(1,3-butadiene)Ru(0), and molecular oxygen. Microelectronic Engineering. 137. 16–22. 30 indexed citations

15.

Hong, Tae Eun, Seungmin Yeo, Taehoon Cheon, et al.. (2014). Highly Conformal Amorphous W–Si–N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization. The Journal of Physical Chemistry C. 119(3). 1548–1556. 19 indexed citations

16.

Yeo, Seungmin, Taehoon Cheon, Soo‐Hyun Kim, et al.. (2014). Growth of highly conformal ruthenium-oxide thin films with enhanced nucleation by atomic layer deposition. Journal of Alloys and Compounds. 610. 529–539. 16 indexed citations

17.

Yeo, Seungmin, et al.. (2013). Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization. Thin Solid Films. 546. 2–8. 43 indexed citations

18.

Kim, Myung Jun, Hoe Chul Kim, Soo‐Hyun Kim, et al.. (2013). Direct Electrodeposition of Cu on Ru-Al₂O₃Layer. Journal of The Electrochemical Society. 160(12). D3057–D3062. 7 indexed citations

19.

Hong, Tae Eun, Seungmin Yeo, Soo‐Hyun Kim, et al.. (2012). Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O₂. ECS Journal of Solid State Science and Technology. 2(3). P47–P53. 39 indexed citations

20.

Ahn, Jeung Sun, et al.. (2007). Effect of Ambient Ar Gas on the Composition Control and Crystalline Properties of TiNi Thin Films Fabricated by Using Pulsed Laser Deposition. Journal of the Korean Physical Society. 50(6). 1750–1750. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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