Scott Sills

782 total citations
20 papers, 577 citations indexed

About

Scott Sills is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Scott Sills has authored 20 papers receiving a total of 577 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Scott Sills's work include Ferroelectric and Negative Capacitance Devices (11 papers), Advanced Memory and Neural Computing (11 papers) and Force Microscopy Techniques and Applications (6 papers). Scott Sills is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (11 papers), Advanced Memory and Neural Computing (11 papers) and Force Microscopy Techniques and Applications (6 papers). Scott Sills collaborates with scholars based in United States, Italy and Switzerland. Scott Sills's co-authors include René M. Overney, Nirmal Ramaswamy, Alessandro Calderoni, Stefano Ambrogio, Zhongqiang Wang, Daniele Ielmini, Simone Balatti, Jane Frommer, Tomoko Gray and Katsuhisa Aratani and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Nano Letters.

In The Last Decade

Scott Sills

20 papers receiving 564 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Scott Sills United States 12 366 159 133 122 120 20 577
D. Wolansky Germany 15 652 1.8× 88 0.6× 179 1.3× 76 0.6× 71 0.6× 52 812
L. Dellmann Switzerland 14 798 2.2× 155 1.0× 191 1.4× 71 0.6× 32 0.3× 31 903
Zhengyi Cao China 11 468 1.3× 82 0.5× 350 2.6× 40 0.3× 81 0.7× 21 585
Qiuyue Huang Singapore 15 215 0.6× 90 0.6× 340 2.6× 55 0.5× 133 1.1× 41 507
Wabe W. Koelmans Switzerland 12 413 1.1× 80 0.5× 188 1.4× 79 0.6× 14 0.1× 32 560
M. Orłowski United States 19 1.1k 2.9× 201 1.3× 178 1.3× 118 1.0× 31 0.3× 107 1.2k
F. Olcaytug Austria 14 355 1.0× 76 0.5× 124 0.9× 39 0.3× 33 0.3× 38 526
Xiaofeng Zhao China 13 367 1.0× 83 0.5× 158 1.2× 165 1.4× 14 0.1× 55 512
Mirko Fraschke Germany 13 864 2.4× 205 1.3× 332 2.5× 72 0.6× 40 0.3× 43 1.1k
Б. Г. Коноплев Russia 14 305 0.8× 135 0.8× 159 1.2× 82 0.7× 16 0.1× 54 471

Countries citing papers authored by Scott Sills

Since Specialization
Citations

This map shows the geographic impact of Scott Sills's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Scott Sills with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Scott Sills more than expected).

Fields of papers citing papers by Scott Sills

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Scott Sills. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Scott Sills. The network helps show where Scott Sills may publish in the future.

Co-authorship network of co-authors of Scott Sills

This figure shows the co-authorship network connecting the top 25 collaborators of Scott Sills. A scholar is included among the top collaborators of Scott Sills based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Scott Sills. Scott Sills is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Padilla, Jennifer E., et al.. (2018). Boron-Implanted Silicon Substrates for Physical Adsorption of DNA Origami. International Journal of Molecular Sciences. 19(9). 2513–2513. 10 indexed citations
2.
Wang, Zhongqiang, Stefano Ambrogio, Simone Balatti, et al.. (2016). Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory. IEEE Transactions on Electron Devices. 63(11). 4279–4287. 33 indexed citations
3.
Balatti, Simone, Stefano Ambrogio, Zhongqiang Wang, et al.. (2015). Understanding pulsed-cycling variability and endurance in HfO<inf>x</inf> RRAM. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 5B.3.1–5B.3.6. 16 indexed citations
4.
Sills, Scott, Alessandro Calderoni, Nirmal Ramaswamy, Shuichiro Yasuda, & Katsuhisa Aratani. (2015). High-density reRAM for storage class memory. 1–4. 2 indexed citations
5.
Sills, Scott, Shuichiro Yasuda, Alessandro Calderoni, et al.. (2015). Challenges for high-density 16Gb ReRAM with 27nm technology. T106–T107. 11 indexed citations
6.
Sills, Scott, Shuichiro Yasuda, Alessandro Calderoni, et al.. (2015). Challenges for high-density 16Gb ReRAM with 27nm technology. T106–T107. 7 indexed citations
7.
Balatti, Simone, Stefano Ambrogio, Zhongqiang Wang, et al.. (2015). Voltage-Controlled Cycling Endurance of HfO<sub><italic>x</italic></sub>-Based Resistive-Switching Memory. IEEE Transactions on Electron Devices. 62(10). 3365–3372. 82 indexed citations
8.
Calderoni, Alessandro, et al.. (2015). Engineering ReRAM for high-density applications. Microelectronic Engineering. 147. 145–150. 33 indexed citations
9.
Wang, Zhongqiang, Stefano Ambrogio, Simone Balatti, et al.. (2015). Cycling-induced degradation of metal-oxide resistive switching memory (RRAM). Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 7.6.1–7.6.4. 13 indexed citations
10.
Sills, Scott, Shuichiro Yasuda, J. Strand, et al.. (2014). A copper ReRAM cell for Storage Class Memory applications. 1–2. 51 indexed citations
11.
Balatti, Simone, Stefano Ambrogio, Zhongqiang Wang, et al.. (2014). Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM). Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 14.3.1–14.3.4. 32 indexed citations
12.
Calderoni, Alessandro, Scott Sills, & Nirmal Ramaswamy. (2014). Performance comparison of O-based and Cu-based ReRAM for high-density applications. 1–4. 40 indexed citations
13.
Sills, Scott & René M. Overney. (2010). Molecular Mobility and Interfacial Dynamics in Organic Nano-electromechanical Systems (NEMS). Journal of Adhesion Science and Technology. 24(15-16). 2641–2667. 2 indexed citations
14.
Sills, Scott, et al.. (2007). Local characterization of vapor-deposited electrode edges in thin film organic electronic devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(2). 421–425. 1 indexed citations
15.
Gotsmann, Bernd, Urs Duerig, Scott Sills, Jane Frommer, & Craig J. Hawker. (2006). Controlling Nanowear in a Polymer by Confining Segmental Relaxation. Nano Letters. 6(2). 296–300. 31 indexed citations
16.
Sills, Scott, René M. Overney, Bernd Gotsmann, & Jane Frommer. (2005). Strain shielding and confined plasticity in thin polymer films: Impacts on thermomechanical data storage. Tribology Letters. 19(1). 9–15. 9 indexed citations
17.
Sills, Scott, Tomoko Gray, & René M. Overney. (2005). Molecular dissipation phenomena of nanoscopic friction in the heterogeneous relaxation regime of a glass former. The Journal of Chemical Physics. 123(13). 134902–134902. 43 indexed citations
18.
Sills, Scott, Hanson Fong, Cynthia Buenviaje, Mehmet Sarıkaya, & René M. Overney. (2005). Thermal transition measurements of polymer thin films by modulated nanoindentation. Journal of Applied Physics. 98(1). 9 indexed citations
19.
Sills, Scott, et al.. (2004). Interfacial glass transition profiles in ultrathin, spin cast polymer films. The Journal of Chemical Physics. 120(11). 5334–5338. 60 indexed citations
20.
Sills, Scott & René M. Overney. (2003). Creeping Friction Dynamics and Molecular Dissipation Mechanisms in Glassy Polymers. Physical Review Letters. 91(9). 95501–95501. 92 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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