Sara Fathipour

1.0k total citations
24 papers, 871 citations indexed

About

Sara Fathipour is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Sara Fathipour has authored 24 papers receiving a total of 871 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Sara Fathipour's work include 2D Materials and Applications (15 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Sara Fathipour is often cited by papers focused on 2D Materials and Applications (15 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Sara Fathipour collaborates with scholars based in United States, Slovenia and Iran. Sara Fathipour's co-authors include Alan Seabaugh, Huili Grace Xing, Vladimir Protasenko, Susan K. Fullerton‐Shirey, Debdeep Jena, Rusen Yan, Shudong Xiao, David A. Muller, Yimo Han and Bo Song and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

Sara Fathipour

23 papers receiving 852 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sara Fathipour United States 10 718 574 124 70 40 24 871
Seung‐Young Seo South Korea 10 532 0.7× 305 0.5× 77 0.6× 61 0.9× 44 1.1× 15 612
June Yeong Lim South Korea 12 749 1.0× 498 0.9× 178 1.4× 34 0.5× 66 1.6× 19 839
Sarah Riazimehr Germany 7 597 0.8× 365 0.6× 203 1.6× 112 1.6× 53 1.3× 9 688
I-Hsi Lu United States 7 528 0.7× 332 0.6× 87 0.7× 94 1.3× 80 2.0× 9 599
Mohamed Rinzan United States 5 517 0.7× 296 0.5× 110 0.9× 79 1.1× 20 0.5× 8 578
Peiting Wen China 14 431 0.6× 316 0.6× 83 0.7× 70 1.0× 83 2.1× 18 505
Javad G. Azadani United States 8 762 1.1× 440 0.8× 114 0.9× 135 1.9× 95 2.4× 11 864
Dongsuk Lim South Korea 14 568 0.8× 364 0.6× 125 1.0× 46 0.7× 38 0.9× 22 672
Liangmei Wu China 12 427 0.6× 298 0.5× 70 0.6× 111 1.6× 69 1.7× 21 538
Yang Lan China 8 373 0.5× 393 0.7× 52 0.4× 88 1.3× 63 1.6× 9 490

Countries citing papers authored by Sara Fathipour

Since Specialization
Citations

This map shows the geographic impact of Sara Fathipour's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sara Fathipour with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sara Fathipour more than expected).

Fields of papers citing papers by Sara Fathipour

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sara Fathipour. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sara Fathipour. The network helps show where Sara Fathipour may publish in the future.

Co-authorship network of co-authors of Sara Fathipour

This figure shows the co-authorship network connecting the top 25 collaborators of Sara Fathipour. A scholar is included among the top collaborators of Sara Fathipour based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sara Fathipour. Sara Fathipour is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Remškar, Maja, A. K. Hüttel, T. V. Shubina, et al.. (2021). Confinement Related Phenomena in MoS2 Tubular Structures Grown from Vapour Phase. Israel Journal of Chemistry. 62(3-4). 4 indexed citations
2.
Fathipour, Sara, et al.. (2020). Electric-double-layer p–i–n junctions in WSe2. Scientific Reports. 10(1). 12890–12890. 5 indexed citations
3.
4.
Poshakinskiy, A. V., V. Yu. Davydov, A. N. Smirnov, et al.. (2018). Multiwall MoS2 tubes as optical resonators. Applied Physics Letters. 113(10). 36 indexed citations
5.
6.
Fathipour, Sara, et al.. (2017). Reconfigurable Electric Double Layer Doping in an MoS2Nanoribbon Transistor. IEEE Transactions on Electron Devices. 64(12). 5217–5222. 10 indexed citations
7.
Müller, Marcel, Sara Fathipour, H. Q. Xu, et al.. (2016). Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure. Nanoscale Research Letters. 11(1). 512–512. 21 indexed citations
8.
Fathipour, Sara, Pratyush Pandey, Susan K. Fullerton‐Shirey, & Alan Seabaugh. (2016). Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate. Journal of Applied Physics. 120(23). 23 indexed citations
9.
Fathipour, Sara, et al.. (2016). Demonstration of electric double layer p-i-n junction in WSe<inf>2</inf>. 6. 1–2. 5 indexed citations
10.
Seabaugh, Alan, Huamin Li, Hao Lü, et al.. (2016). Steep slope transistors: Tunnel FETs and beyond. 349–351. 16 indexed citations
11.
Fathipour, Sara, Huamin Li, Maja Remškar, et al.. (2016). Record high current density and low contact resistance in MoS2 FETs by ion doping. 13. 1–2. 7 indexed citations
12.
Park, Jun Hong, Sara Fathipour, Kasra Sardashti, et al.. (2016). Atomic Layer Deposition of Al2O3on WSe2Functionalized by Titanyl Phthalocyanine. ACS Nano. 10(7). 6888–6896. 82 indexed citations
13.
Fathipour, Sara, Jun Hong Park, Andrew C. Kummel, & Alan Seabaugh. (2015). Low-leakage WSe<inf>2</inf> FET gate-stack using titanyl phthalocyanine seeding layer for atomic layer deposition of Al<inf>2</inf>O<inf>3</inf>. 33. 213–214. 5 indexed citations
14.
Xu, Huilong, Sara Fathipour, Erich Kinder, Alan Seabaugh, & Susan K. Fullerton‐Shirey. (2015). Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte. ACS Nano. 9(5). 4900–4910. 112 indexed citations
15.
Seabaugh, Alan, Sara Fathipour, Wenjun Li, et al.. (2015). Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels. 35.6.1–35.6.4. 18 indexed citations
16.
Fathipour, Sara, Huilong Xu, Erich Kinder, Susan K. Fullerton‐Shirey, & Alan Seabaugh. (2014). Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe<inf>2</inf> field-effect transistor. 13. 125–126. 1 indexed citations
17.
Fathipour, Sara, Nan Ma, Wan Sik Hwang, et al.. (2014). Exfoliated multilayer MoTe2 field-effect transistors. Applied Physics Letters. 105(19). 171 indexed citations
18.
Fathipour, Sara, et al.. (2012). Device simulation of a novel strained silicon channel RF LDMOS. Microelectronic Engineering. 94. 29–32. 5 indexed citations
19.
Malakoutian, Mohamadali, et al.. (2011). Analysis of a source hetrojunction LDMOS device with strained silicon channel. Iranian Conference on Electrical Engineering. 1–5. 1 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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