S. W. Whangbo

510 total citations
22 papers, 458 citations indexed

About

S. W. Whangbo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, S. W. Whangbo has authored 22 papers receiving a total of 458 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in S. W. Whangbo's work include Semiconductor materials and devices (12 papers), ZnO doping and properties (7 papers) and Ga2O3 and related materials (6 papers). S. W. Whangbo is often cited by papers focused on Semiconductor materials and devices (12 papers), ZnO doping and properties (7 papers) and Ga2O3 and related materials (6 papers). S. W. Whangbo collaborates with scholars based in South Korea and United States. S. W. Whangbo's co-authors include C. N. Whang, Sunghoon Choi, Dae‐Hong Ko, Hyunchul Jang, Kwangsik Jeong, I.-W. Lyo, Yong‐Duck Chung, C. N. Whang, Pil Joo Kim and Kwangho Jeong and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Chemistry.

In The Last Decade

S. W. Whangbo

22 papers receiving 440 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. W. Whangbo South Korea 11 328 284 108 53 51 22 458
Z. A. Sechrist United States 7 582 1.8× 457 1.6× 103 1.0× 69 1.3× 87 1.7× 9 758
Rand Dannenberg United States 8 262 0.8× 237 0.8× 69 0.6× 37 0.7× 41 0.8× 15 412
Jarmo Skarp Finland 11 575 1.8× 669 2.4× 122 1.1× 60 1.1× 51 1.0× 20 780
S. Sinha India 9 217 0.7× 117 0.4× 97 0.9× 49 0.9× 83 1.6× 23 464
J. Dudonis Lithuania 13 327 1.0× 147 0.5× 71 0.7× 31 0.6× 98 1.9× 34 427
V. Kras̆evec Slovenia 13 302 0.9× 168 0.6× 82 0.8× 25 0.5× 26 0.5× 35 407
Takao Morimura Japan 14 361 1.1× 288 1.0× 99 0.9× 119 2.2× 62 1.2× 74 678
B. S. Chao Mexico 12 490 1.5× 357 1.3× 64 0.6× 75 1.4× 63 1.2× 30 639
W. Pitschke Germany 13 328 1.0× 181 0.6× 124 1.1× 145 2.7× 76 1.5× 50 539
S. Tripura Sundari India 13 306 0.9× 266 0.9× 89 0.8× 72 1.4× 121 2.4× 45 548

Countries citing papers authored by S. W. Whangbo

Since Specialization
Citations

This map shows the geographic impact of S. W. Whangbo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. W. Whangbo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. W. Whangbo more than expected).

Fields of papers citing papers by S. W. Whangbo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. W. Whangbo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. W. Whangbo. The network helps show where S. W. Whangbo may publish in the future.

Co-authorship network of co-authors of S. W. Whangbo

This figure shows the co-authorship network connecting the top 25 collaborators of S. W. Whangbo. A scholar is included among the top collaborators of S. W. Whangbo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. W. Whangbo. S. W. Whangbo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Whangbo, S. W., Yong‐Duck Chung, Han Woong Yeom, et al.. (2002). Growth of epitaxial γ-Al2O3(111) films using an oxidized Si(111) substrate. Journal of Materials Chemistry. 12(8). 2559–2562. 8 indexed citations
2.
Whangbo, S. W., et al.. (2001). Effect of oxidized Al prelayer for the growth of polycrystalline Al2O3 films on Si using ionized beam deposition. Thin Solid Films. 388(1-2). 290–294. 8 indexed citations
3.
Cho, M.-H., Dae‐Hong Ko, Jungmok Seo, et al.. (2001). Characteristics of Y2O3 films on Si(111) grown by oxygen-ion beam-assisted deposition. Thin Solid Films. 382(1-2). 288–296. 12 indexed citations
4.
Whangbo, S. W., et al.. (2001). Effect of silicon surface states on the properties of epitaxial Al2O3 films. Thin Solid Films. 398-399. 480–484. 3 indexed citations
5.
Whangbo, S. W., et al.. (2001). Effects of thermal annealing a glass surface in air. Journal of Non-Crystalline Solids. 296(3). 182–187. 9 indexed citations
6.
Whangbo, S. W., et al.. (2001). Epitaxial growth of Al2O3 thin films on Si(100) using ionized beam deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(2). 410–413. 6 indexed citations
7.
Jang, Hyunchul, et al.. (2001). Effects of chemical etching with nitric acid on glass surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(1). 267–274. 31 indexed citations
8.
Whangbo, S. W., et al.. (2000). Properties of ZnO Thin Films Grown at Room Temperature by using Ionized Cluster Beam Deposition. Journal of the Korean Physical Society. 37(4). 456–460. 29 indexed citations
9.
Jang, Hyunchul, Yong‐Duck Chung, S. W. Whangbo, et al.. (2000). Effects of chemical etching with hydrochloric acid on a glass surface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(5). 2563–2567. 19 indexed citations
10.
Jang, Hyunchul, et al.. (2000). Titanium oxide films on Si(100) deposited by e-beam evaporation. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(6). 2932–2936. 21 indexed citations
11.
Jang, Hyunchul, S. W. Whangbo, Yong‐Duck Chung, et al.. (2000). Comparison of titanium oxide films grown on bare glass and boiled glass in 50% H2SO4 by metal-organic chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(5). 2394–2399. 3 indexed citations
12.
Jang, Hyunchul, et al.. (2000). Effects of chemical etching with sulfuric acid on glass surface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(2). 401–404. 24 indexed citations
13.
Jang, Hyunchul, et al.. (2000). Titanium oxide films on Si(100) deposited by electron-beam evaporation at 250 °C. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(3). 917–921. 35 indexed citations
14.
Ko, Dae‐Hong, et al.. (1999). Structural transition of crystalline Y2O3 film on Si(111) with substrate temperature. Thin Solid Films. 349(1-2). 266–269. 62 indexed citations
15.
Jang, Hong‐Kyu, et al.. (1999). Hydrogenated amorphous carbon nitride films on Si(100) deposited by direct current saddle-field plasma-enhanced chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(5). 2607–2611. 5 indexed citations
16.
Ko, Dae‐Hong, et al.. (1999). Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam deposition. Journal of Applied Physics. 85(5). 2909–2914. 54 indexed citations
17.
Whangbo, S. W., et al.. (1998). Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 142(3). 393–396. 5 indexed citations
18.
Choi, Sunghoon, et al.. (1997). Physical properties of Y 2O 3 films fabricated by the reactive ionized cluster beam deposition technique. Journal of the Korean Physical Society. 31(1). 144–148. 4 indexed citations
19.
Choi, Sunghoon, et al.. (1997). Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer. Applied Physics Letters. 71(7). 903–905. 89 indexed citations
20.
Choi, Sunghoon, et al.. (1997). Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 121(1-4). 170–174. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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