S. Vangelista

419 total citations
20 papers, 360 citations indexed

About

S. Vangelista is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Vangelista has authored 20 papers receiving a total of 360 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Materials Chemistry, 13 papers in Electrical and Electronic Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Vangelista's work include Semiconductor materials and devices (7 papers), ZnO doping and properties (6 papers) and Magnetic properties of thin films (5 papers). S. Vangelista is often cited by papers focused on Semiconductor materials and devices (7 papers), ZnO doping and properties (6 papers) and Magnetic properties of thin films (5 papers). S. Vangelista collaborates with scholars based in Italy, Finland and France. S. Vangelista's co-authors include Alessio Lamperti, R. Mantovan, M. Fanciulli, Christian Martella, Alessandro Molle, Eugenio Cinquanta, G. Bisognin, Massimo Longo, Satu Ek and G. Ghidini and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Journal of Physics D Applied Physics.

In The Last Decade

S. Vangelista

18 papers receiving 351 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Vangelista Italy 11 269 177 85 47 42 20 360
Yanina Fedorenko Belgium 12 228 0.8× 375 2.1× 167 2.0× 20 0.4× 35 0.8× 33 454
Jiaw‐Ren Shih Taiwan 8 149 0.6× 128 0.7× 58 0.7× 47 1.0× 135 3.2× 32 288
Adel Taabouche Algeria 10 273 1.0× 207 1.2× 30 0.4× 57 1.2× 55 1.3× 34 331
N.Z. El-Sayed Egypt 8 280 1.0× 269 1.5× 50 0.6× 17 0.4× 73 1.7× 13 390
J. Trajić Serbia 12 402 1.5× 323 1.8× 95 1.1× 59 1.3× 39 0.9× 50 471
Bingyu Xia China 8 378 1.4× 87 0.5× 163 1.9× 26 0.6× 26 0.6× 11 445
G. Visimberga Ireland 10 284 1.1× 300 1.7× 116 1.4× 27 0.6× 36 0.9× 18 416
Anh Khoa Augustin Lu Japan 13 327 1.2× 182 1.0× 69 0.8× 22 0.5× 32 0.8× 35 404
Sung-Keun Lim South Korea 7 309 1.1× 382 2.2× 70 0.8× 43 0.9× 35 0.8× 8 472
Yu-Hui Tang Taiwan 10 239 0.9× 139 0.8× 174 2.0× 14 0.3× 42 1.0× 37 391

Countries citing papers authored by S. Vangelista

Since Specialization
Citations

This map shows the geographic impact of S. Vangelista's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Vangelista with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Vangelista more than expected).

Fields of papers citing papers by S. Vangelista

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Vangelista. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Vangelista. The network helps show where S. Vangelista may publish in the future.

Co-authorship network of co-authors of S. Vangelista

This figure shows the co-authorship network connecting the top 25 collaborators of S. Vangelista. A scholar is included among the top collaborators of S. Vangelista based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Vangelista. S. Vangelista is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
D’Ambrosio, E., et al.. (2024). Manipulating Band-to-Band Tunneling Current in Low-Voltage pMOS Devices in BCD Technology: A TCAD and Experimental Investigation. IEEE Transactions on Electron Devices. 71(11). 6927–6933.
2.
Martella, Christian, S. Vangelista, Alessio Lamperti, et al.. (2020). Growth of 2D-molybdenum disulfide on top of magnetite and iron by chemical methods. Thin Solid Films. 701. 137943–137943. 3 indexed citations
3.
Rossetto, Isabella, Sabina Spiga, Alessio Lamperti, et al.. (2019). Impact of annealing on the current conduction and trap properties of CeO2/La2O3 metal-insulator-metal capacitors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 37(2). 2 indexed citations
4.
Vangelista, S., et al.. (2018). Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition. Beilstein Journal of Nanotechnology. 9. 890–899. 7 indexed citations
5.
Vangelista, S., et al.. (2017). Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates. Thin Solid Films. 636. 78–84. 54 indexed citations
6.
Vangelista, S., Eugenio Cinquanta, Christian Martella, et al.. (2016). Towards a uniform and large-scale deposition of MoS2nanosheets via sulfurization of ultra-thin Mo-based solid films. Nanotechnology. 27(17). 175703–175703. 61 indexed citations
7.
Vangelista, S., Alessio Lamperti, Claudia Wiemer, M. Fanciulli, & R. Mantovan. (2016). Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si. Thin Solid Films. 604. 18–22. 8 indexed citations
8.
Martella, Christian, Eugenio Cinquanta, E. Cianci, et al.. (2016). Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor. Advanced Electronic Materials. 2(10). 43 indexed citations
9.
Mantovan, R., et al.. (2014). 全in situ原子層蒸着と化学気相堆積により合成したFe 3-δ O 4 /MgO/Co磁気トンネル接合. Journal of Physics D Applied Physics. 47(10). 1–4. 6 indexed citations
10.
Mantovan, R., S. Vangelista, Claudia Wiemer, et al.. (2014). Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition. Journal of Applied Physics. 115(17). 4 indexed citations
11.
Mantovan, R., S. Vangelista, Alessio Lamperti, et al.. (2014). Fe3−δO4/MgO/Co magnetic tunnel junctions synthesized by fullin situatomic layer and chemical vapour deposition. Journal of Physics D Applied Physics. 47(10). 102002–102002. 15 indexed citations
12.
Vangelista, S., R. Mantovan, Alessio Lamperti, et al.. (2013). Low-temperature atomic layer deposition of MgO thin films on Si. Journal of Physics D Applied Physics. 46(48). 485304–485304. 37 indexed citations
13.
Mantovan, R., et al.. (2012). Chemical vapor deposition of polycrystalline Fe3O4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor. Journal of Applied Physics. 111(7). 16 indexed citations
14.
Mantovan, R., et al.. (2011). Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes. Thin Solid Films. 520(14). 4820–4822. 19 indexed citations
15.
Vangelista, S., et al.. (2011). Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions. Thin Solid Films. 520(14). 4617–4621. 23 indexed citations
16.
Bisognin, G., S. Vangelista, M. Berti, G. Impellizzeri, & Maria Grazia Grimaldi. (2010). Substitutional and clustered B in ion implanted Ge: Strain determination. Journal of Applied Physics. 107(10). 13 indexed citations
17.
18.
Bisognin, G., S. Vangelista, E. Napolitani, et al.. (2009). Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution. Thin Solid Films. 518(9). 2326–2329. 1 indexed citations
19.
Bisognin, G., S. Vangelista, & E. Bruno. (2008). High-resolution X-ray diffraction by end of range defects in self-amorphized Ge. Materials Science and Engineering B. 154-155. 64–67. 15 indexed citations
20.
Berti, M., G. Bisognin, D. De Salvador, et al.. (2007). Formation and dissolution of D-N complexes in dilute nitrides. Physical Review B. 76(20). 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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