S. Vandrè

570 total citations
19 papers, 497 citations indexed

About

S. Vandrè is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Electrical and Electronic Engineering. According to data from OpenAlex, S. Vandrè has authored 19 papers receiving a total of 497 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Atomic and Molecular Physics, and Optics, 7 papers in Surfaces, Coatings and Films and 7 papers in Electrical and Electronic Engineering. Recurrent topics in S. Vandrè's work include Surface and Thin Film Phenomena (12 papers), Semiconductor materials and interfaces (7 papers) and Electron and X-Ray Spectroscopy Techniques (7 papers). S. Vandrè is often cited by papers focused on Surface and Thin Film Phenomena (12 papers), Semiconductor materials and interfaces (7 papers) and Electron and X-Ray Spectroscopy Techniques (7 papers). S. Vandrè collaborates with scholars based in Germany, Italy and France. S. Vandrè's co-authors include C. Preinesberger, T. Kalka, M. Dähne‐Prietsch, M. Dähne, S. K. Becker, M. Sancrotti, A. Goldoni, Cinzia Cepek, E. Weschke and G. Kaindl and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S. Vandrè

19 papers receiving 489 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Vandrè Germany 11 431 137 120 118 80 19 497
V. Pérez-Dieste Spain 10 310 0.7× 74 0.5× 145 1.2× 65 0.6× 41 0.5× 25 396
G. V. Prudnikova Russia 11 328 0.8× 114 0.8× 311 2.6× 42 0.4× 58 0.7× 25 488
M. Y. Yen United States 12 235 0.5× 215 1.6× 194 1.6× 59 0.5× 38 0.5× 17 401
Cole Ritter United States 8 131 0.3× 213 1.6× 123 1.0× 62 0.5× 46 0.6× 15 356
K. Nakatsuji Japan 14 260 0.6× 172 1.3× 220 1.8× 38 0.3× 57 0.7× 27 473
T. Takebe Japan 14 371 0.9× 458 3.3× 212 1.8× 115 1.0× 79 1.0× 40 588
Toshio Sakurai Toshio Sakurai Japan 13 276 0.6× 100 0.7× 297 2.5× 76 0.6× 47 0.6× 18 487
P. Mathiez France 13 302 0.7× 139 1.0× 86 0.7× 78 0.7× 10 0.1× 23 413
А. А. Захаров Sweden 11 117 0.3× 121 0.9× 188 1.6× 65 0.6× 49 0.6× 27 343
J. Viernow United States 9 393 0.9× 221 1.6× 193 1.6× 82 0.7× 68 0.8× 10 539

Countries citing papers authored by S. Vandrè

Since Specialization
Citations

This map shows the geographic impact of S. Vandrè's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Vandrè with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Vandrè more than expected).

Fields of papers citing papers by S. Vandrè

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Vandrè. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Vandrè. The network helps show where S. Vandrè may publish in the future.

Co-authorship network of co-authors of S. Vandrè

This figure shows the co-authorship network connecting the top 25 collaborators of S. Vandrè. A scholar is included among the top collaborators of S. Vandrè based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Vandrè. S. Vandrè is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Preinesberger, C., S. K. Becker, S. Vandrè, T. Kalka, & M. Dähne. (2002). Structure of DySi2 nanowires on Si(001). Journal of Applied Physics. 91(3). 1695–1697. 79 indexed citations
2.
Vandrè, S., C. Preinesberger, W. Busse, & M. Dähne. (2001). Conservation of flatband conditions for DySi2 monolayers on n-type Si(111). Applied Physics Letters. 78(14). 2012–2014. 17 indexed citations
3.
Vandrè, S., T. Kalka, C. Preinesberger, & M. Dähne‐Prietsch. (1999). Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(4). 1682–1690. 23 indexed citations
4.
Weschke, E., C. Schüßler-Langeheine, Chandan Mazumdar, et al.. (1999). New Low-Temperature Phase of Yb Metal and its Relation toα-Ce. Physical Review Letters. 83(3). 584–587. 9 indexed citations
5.
Vandrè, S., T. Kalka, C. Preinesberger, & M. Dähne‐Prietsch. (1999). Flatband Conditions Observed for Lanthanide-Silicide Monolayers onn-Type Si(111). Physical Review Letters. 82(9). 1927–1930. 47 indexed citations
6.
Preinesberger, C., S. Vandrè, T. Kalka, & M. Dähne‐Prietsch. (1998). Formation of dysprosium silicide wires on Si(001). Journal of Physics D Applied Physics. 31(12). L43–L45. 137 indexed citations
7.
Goldoni, A., et al.. (1998). Temperature dependence of the electronic structure nearEFand electron-phonon interaction inC60/Ag(100)single layers. Physical review. B, Condensed matter. 58(4). 2228–2232. 26 indexed citations
8.
Magnano, Elena, et al.. (1998). Surface and subsurface properties of a BaLi4 gettering alloy studied using X-ray photoemission spectroscopy. Surface Science. 402-404. 223–226. 4 indexed citations
9.
Cepek, Cinzia, A. Goldoni, S. Vandrè, et al.. (1998). Photoemission of Ge(110) at room and high temperature. Surface Science. 402-404. 875–879. 8 indexed citations
10.
Seta, M. De, Cinzia Cepek, S. Vandrè, et al.. (1998). Surface phase transitions of Ge(100) studied via valence band photoemission. Surface Science. 402-404. 871–874. 5 indexed citations
11.
Vandrè, S., T. Kalka, C. Preinesberger, et al.. (1998). Growth and electronic structure of dy silicide on Si(111). Applied Surface Science. 123-124. 100–103. 10 indexed citations
12.
Kalka, T., C. Preinesberger, S. Vandrè, & M. Dähne‐Prietsch. (1998). STM study of epitaxial Dy silicides on Si(111) and Si(001) using ultra-sharp tips prepared by ion bombardment. Applied Physics A. 66(7). S1073–S1075. 9 indexed citations
13.
Seta, M. De, Cinzia Cepek, S. Vandrè, et al.. (1998). Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission. Physical review. B, Condensed matter. 57(23). 14654–14657. 21 indexed citations
14.
Vandrè, S., A. Santoni, A. Goldoni, V.R. Dhanak, & M. Sancrotti. (1997). High temperature core-level photoemission study of Si(111). Surface Science. 377-379. 283–287. 19 indexed citations
15.
Magnano, Elena, S. Vandrè, Cinzia Cepek, et al.. (1997). Substrate-adlayer interaction at the interface studied by high-resolution synchrotron radiation. Surface Science. 377-379. 1066–1070. 23 indexed citations
16.
Vandrè, S., A. Goldoni, Cristina Lenardi, et al.. (1997). Spectromicroscopy of the metastable interface studied by means of synchrotron radiation. Surface Science. 377-379. 266–270. 6 indexed citations
17.
Schüßler-Langeheine, C., А. В. Федоров, K. Starke, et al.. (1995). Temperature-dependent study of the partially filled surface state on Tb(0001). Journal of Electron Spectroscopy and Related Phenomena. 76. 535–539. 5 indexed citations
18.
Kaindl, G., et al.. (1995). Surface core-level shifts and surface states for the heavy lanthanide metals. Physical review. B, Condensed matter. 51(12). 7920–7923. 42 indexed citations
19.
Weschke, E., A. Höhr, S. Vandrè, et al.. (1995). Thermal effects on photoemission spectra of lanthanide metals. Journal of Electron Spectroscopy and Related Phenomena. 76. 571–576. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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