S. Shigetomi

944 total citations
51 papers, 733 citations indexed

About

S. Shigetomi is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Shigetomi has authored 51 papers receiving a total of 733 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Materials Chemistry, 41 papers in Electrical and Electronic Engineering and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Shigetomi's work include Solid-state spectroscopy and crystallography (39 papers), Chalcogenide Semiconductor Thin Films (35 papers) and Crystal Structures and Properties (12 papers). S. Shigetomi is often cited by papers focused on Solid-state spectroscopy and crystallography (39 papers), Chalcogenide Semiconductor Thin Films (35 papers) and Crystal Structures and Properties (12 papers). S. Shigetomi collaborates with scholars based in Japan. S. Shigetomi's co-authors include Tetsuo Ikari, Hiroshi Nakashima, Hideki Nishimura, Yasuhiko Koga, Yutaka Koga, Kazuyuki Hashimoto, Kôgorô Maeda, Naoyuki Nishimura, A. Tomokiyo and Atsuhiko Fukuyama and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Shigetomi

51 papers receiving 698 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Shigetomi Japan	18	607	474	237	171	65	51	733
V. Balakrishna United States	11	260 0.4×	401 0.8×	155 0.7×	171 1.0×	37 0.6×	20	575
N. N. Kraǐnik Russia	7	509 0.8×	205 0.4×	137 0.6×	181 1.1×	202 3.1×	41	576
Susumu Ninomiya Japan	6	343 0.6×	319 0.7×	135 0.6×	63 0.4×	84 1.3×	7	474
S.-I. Kwun South Korea	9	480 0.8×	145 0.3×	164 0.7×	116 0.7×	172 2.6×	28	568
Junkichi Nakai Japan	13	267 0.4×	345 0.7×	354 1.5×	83 0.5×	122 1.9×	71	614
Hidejiro Miki Japan	11	254 0.4×	329 0.7×	179 0.8×	84 0.5×	40 0.6×	29	471
T. Kanata Japan	12	311 0.5×	378 0.8×	311 1.3×	67 0.4×	166 2.6×	20	599
M. Tapiero France	15	382 0.6×	413 0.9×	250 1.1×	76 0.4×	23 0.4×	32	657
A. T. Blumenau Germany	13	379 0.6×	290 0.6×	132 0.6×	59 0.3×	58 0.9×	21	546
G. Dujardin France	13	543 0.9×	297 0.6×	209 0.9×	40 0.2×	63 1.0×	20	688

Countries citing papers authored by S. Shigetomi

Since Specialization

Citations

This map shows the geographic impact of S. Shigetomi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Shigetomi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Shigetomi more than expected).

Fields of papers citing papers by S. Shigetomi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Shigetomi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Shigetomi. The network helps show where S. Shigetomi may publish in the future.

Co-authorship network of co-authors of S. Shigetomi

This figure shows the co-authorship network connecting the top 25 collaborators of S. Shigetomi. A scholar is included among the top collaborators of S. Shigetomi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Shigetomi. S. Shigetomi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shigetomi, S. & Tetsuo Ikari. (2005). Radiative transitions of layered semiconductor GaS doped with P. Journal of Luminescence. 118(1). 106–110. 5 indexed citations

Shigetomi, S. & Tetsuo Ikari. (2005). Radiative centers in GaS doped with Zn and Cd. Review of Scientific Instruments. 76(6). 4 indexed citations

Shigetomi, S. & Tetsuo Ikari. (2004). Optical and electrical characteristics of p-GaSe doped with Te. Journal of Applied Physics. 95(11). 6480–6482. 17 indexed citations

Shigetomi, S. & Tetsuo Ikari. (2003). Optical properties of GaSe grown with an excess and a lack of Ga atoms. Journal of Applied Physics. 94(8). 5399–5401. 15 indexed citations

Shigetomi, S. & Tetsuo Ikari. (1999). Transport and optical properties of the layer semiconductor p-type GaSe doped with Li. Philosophical Magazine Letters. 79(8). 575–579. 7 indexed citations

Shigetomi, S., Tetsuo Ikari, & Hideki Nishimura. (1998). Temperature dependence of photoluminescence of layer semiconductor p-GaTe. Journal of Luminescence. 78(2). 117–120. 21 indexed citations

Shigetomi, S., Tetsuo Ikari, & Hiroshi Nakashima. (1997). Electrical and Optical Characteristics of the Layer Semiconductor p-GaSe Doped with Ag. physica status solidi (a). 160(1). 159–164. 18 indexed citations

Shigetomi, S., Tetsuo Ikari, & Hiroshi Nakashima. (1994). Impurity levels in layer semiconductor p-GaSe doped with Mn. Journal of Applied Physics. 76(1). 310–314. 26 indexed citations

Shigetomi, S., Tetsuo Ikari, & Hiroshi Nakashima. (1993). Optical and electrical properties of layer semiconductor p-GaSe doped with Zn. Journal of Applied Physics. 74(6). 4125–4129. 42 indexed citations

10.

Ikari, Tetsuo, et al.. (1993). Photoacoustic investigations of shallow acceptors in silicon by a piezoelectric transducer. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 40(2). 110–113. 2 indexed citations

11.

Maeda, Kôgorô, et al.. (1993). Raman spectra of P-, Sb-, or Bi-dopedGexSe1−xbulk glasses. Physical review. B, Condensed matter. 47(9). 4984–4989. 27 indexed citations

12.

Shigetomi, S., et al.. (1993). Electrical characteristics of layer semiconductor p-GaSe doped with Cd. Journal of Applied Physics. 73(9). 4686–4688. 15 indexed citations

13.

Shigetomi, S., Tetsuo Ikari, Hiroshi Nakashima, & Hideki Nishimura. (1991). Deep Levels of Zn-Doped p-GaSe. physica status solidi (a). 128(2). K95–K98. 11 indexed citations

14.

Shigetomi, S., Tetsuo Ikari, & Hideki Nishimura. (1991). Photoluminescence spectra of p-GaSe doped with Cd. Journal of Applied Physics. 69(11). 7936–7938. 27 indexed citations

15.

Shigetomi, S., et al.. (1991). Annealing behaviour of optical properties and structure of r.f.-sputtered InSe films. Thin Solid Films. 199(2). 215–222. 17 indexed citations

16.

Shigetomi, S., et al.. (1989). Deep levels of Cd-doped InSe. physica status solidi (a). 115(1). K43–K45. 3 indexed citations

17.

Ikari, Tetsuo, et al.. (1988). Carrier Transport Mechanisms of InSe p-n Homojunction. Japanese Journal of Applied Physics. 27(7R). 1271–1271. 5 indexed citations

18.

Shigetomi, S., Tetsuo Ikari, Yasuhiko Koga, & S. Shigetomi. (1985). Annealing behavior of photoacoustic spectra of undoped inse. physica status solidi (a). 90(1). K61–K64. 5 indexed citations

19.

Ikari, Tetsuo & S. Shigetomi. (1984). Photoluminescence of n‐Type InSe. physica status solidi (b). 124(1). 9 indexed citations

20.

Shigetomi, S., Tetsuo Ikari, Yasuhiko Koga, & S. Shigetomi. (1984). Annealing behavior of electrical properties of n-InSe single crystals. physica status solidi (a). 86(1). K69–K72. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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