С. И. Курганский

404 total citations
61 papers, 299 citations indexed

About

С. И. Курганский is a scholar working on Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, С. И. Курганский has authored 61 papers receiving a total of 299 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Atomic and Molecular Physics, and Optics, 27 papers in Materials Chemistry and 19 papers in Electrical and Electronic Engineering. Recurrent topics in С. И. Курганский's work include Semiconductor materials and interfaces (19 papers), Advanced Chemical Physics Studies (19 papers) and Surface and Thin Film Phenomena (9 papers). С. И. Курганский is often cited by papers focused on Semiconductor materials and interfaces (19 papers), Advanced Chemical Physics Studies (19 papers) and Surface and Thin Film Phenomena (9 papers). С. И. Курганский collaborates with scholars based in Russia, Germany and United Arab Emirates. С. И. Курганский's co-authors include É. P. Domashevskaya, O. V. Farberovich, S. Yu. Turishchev, Ruslan Ovsyannikov, S. V. Ryabtsev, Alexander Smogunov, Владимир Сиваков, И. Н. Шабанова, О. В. Попова and А. В. Ситников and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Small.

In The Last Decade

С. И. Курганский

53 papers receiving 287 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
С. И. Курганский Russia 12 183 154 87 47 40 61 299
M. Kobayashi Japan 11 246 1.3× 103 0.7× 126 1.4× 39 0.8× 34 0.8× 42 352
Z. Bryknar Czechia 10 329 1.8× 92 0.6× 137 1.6× 33 0.7× 77 1.9× 45 383
Chunyuan He China 13 364 2.0× 91 0.6× 149 1.7× 23 0.5× 87 2.2× 29 483
N. D. Afify United Kingdom 13 263 1.4× 82 0.5× 124 1.4× 12 0.3× 40 1.0× 26 379
Eunjung Ko South Korea 11 184 1.0× 95 0.6× 162 1.9× 18 0.4× 71 1.8× 32 330
L. Nosenzo Italy 12 205 1.1× 158 1.0× 180 2.1× 32 0.7× 45 1.1× 36 330
Zhengquan Tan United States 11 157 0.9× 99 0.6× 105 1.2× 19 0.4× 112 2.8× 32 388
K. B. Joshi India 11 330 1.8× 115 0.7× 148 1.7× 21 0.4× 97 2.4× 70 427
D. Vlachos Greece 12 288 1.6× 101 0.7× 177 2.0× 16 0.3× 46 1.1× 35 402
Dahu Chang China 12 394 2.2× 138 0.9× 271 3.1× 37 0.8× 75 1.9× 22 558

Countries citing papers authored by С. И. Курганский

Since Specialization
Citations

This map shows the geographic impact of С. И. Курганский's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by С. И. Курганский with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites С. И. Курганский more than expected).

Fields of papers citing papers by С. И. Курганский

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by С. И. Курганский. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by С. И. Курганский. The network helps show where С. И. Курганский may publish in the future.

Co-authorship network of co-authors of С. И. Курганский

This figure shows the co-authorship network connecting the top 25 collaborators of С. И. Курганский. A scholar is included among the top collaborators of С. И. Курганский based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with С. И. Курганский. С. И. Курганский is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Turishchev, S. Yu., et al.. (2023). Spectromicroscopy Studies of Silicon Nanowires Array Covered by Tin Oxide Layers. Small. 19(10). e2206322–e2206322. 5 indexed citations
3.
Курганский, С. И., et al.. (2022). Structural Evolution of Monoanionic Hafnium-Doped Tin Clusters. Inorganic Materials. 58(12). 1249–1256. 1 indexed citations
4.
Курганский, С. И., et al.. (2019). Application of computer simulation for research of spatial structure, growth, and electronic properties of zero-dimensional structures on example of silicon-niobium anionic clusters. Journal of Physics Conference Series. 1203. 12056–12056. 2 indexed citations
5.
Курганский, С. И., et al.. (2018). Atomic Structure and Electronic Properties of Anionic Germanium–Zirconium Clusters. Inorganic Materials. 54(1). 1–7. 18 indexed citations
6.
Курганский, С. И., et al.. (2018). Spatial Structure, Electron Energy Spectrum, and Growth of HfSi n − Clusters (n = 6–20). Russian Journal of Inorganic Chemistry. 63(8). 1062–1068. 2 indexed citations
8.
Курганский, С. И., et al.. (2017). AB INITIO РАСЧЕТ ЭЛЕКТРОННО-ЭНЕРГЕТИЧЕСКОГО СПЕКТРА СВЕРХ-ТОНКИХ НАНОПЛЕНОК МЕТАЛЛИЧЕСКОГО ОЛОВА. Конденсированные среды и межфазные границы. 19(4). 542–542.
9.
Курганский, С. И., et al.. (2016). Ab initio calculation and synchrotron X-ray spectroscopy investigations of tin oxides near the Sn L 3 absorption edges. Physics of the Solid State. 58(12). 2379–2384. 1 indexed citations
10.
Terekhov, V. A., et al.. (2016). The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data. Applied Surface Science. 382. 331–335. 1 indexed citations
11.
Курганский, С. И., et al.. (2015). Spatial structure and electron energy spectrum of HfGe– n (n = 6–20) clusters. Inorganic Materials. 51(9). 870–876. 6 indexed citations
12.
Курганский, С. И., et al.. (2014). Geometric structure and electron spectrum of YSi n − clusters (n = 6–17). Physics of the Solid State. 56(6). 1276–1281. 5 indexed citations
13.
Курганский, С. И., et al.. (2014). Spatial structure and electronic spectrum of TiSi n − clusters (n = 6–18). Russian Journal of Physical Chemistry A. 88(10). 1712–1718. 4 indexed citations
14.
Курганский, С. И.. (2005). Electronic Structure and Spectral Properties of Si[sub 46] and Na[sub 8]Si[sub 46] Clathrates. Semiconductors. 39(10). 1176–1176. 11 indexed citations
15.
Курганский, С. И., et al.. (2003). Fermi surface and electrical characteristics of molybdenum disilicide. Physics of the Solid State. 45(2). 201–206. 5 indexed citations
16.
Курганский, С. И., et al.. (2002). Electronic structure of rhenium disilicides. Journal of Physics Condensed Matter. 14(27). 6833–6839. 11 indexed citations
17.
Курганский, С. И., et al.. (2002). Electronic Structure of Molybdenum Disilicide. physica status solidi (b). 233(2). 306–311. 7 indexed citations
18.
Курганский, С. И., et al.. (1990). Non‐Relativistic and Scalar‐Relativistic LAPW Electronic Energy Bands of (001) Cu Films. physica status solidi (b). 161(2). 697–703. 2 indexed citations
19.
Курганский, С. И. & O. V. Farberovich. (1981). Problems of the OPW Method III. Rare Earths. physica status solidi (b). 106(2). 437–445. 2 indexed citations
20.
Farberovich, O. V., С. И. Курганский, & É. P. Domashevskaya. (1979). Problems of the OPW method. I. Transition metals. physica status solidi (b). 94(1). 51–62. 8 indexed citations

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