S. H. Phark

434 total citations
19 papers, 367 citations indexed

About

S. H. Phark is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. H. Phark has authored 19 papers receiving a total of 367 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in S. H. Phark's work include Semiconductor materials and devices (7 papers), Semiconductor materials and interfaces (5 papers) and Surface and Thin Film Phenomena (4 papers). S. H. Phark is often cited by papers focused on Semiconductor materials and devices (7 papers), Semiconductor materials and interfaces (5 papers) and Surface and Thin Film Phenomena (4 papers). S. H. Phark collaborates with scholars based in South Korea, Germany and Portugal. S. H. Phark's co-authors include Young Jun Chang, Tae Won Noh, Choong H. Kim, Y. S. Kim, Jaejun Yu, D. Sander, Jérôme Borme, J. Kirschner, Dongwook Kim and Hogyoung Kim and has published in prestigious journals such as Physical Review Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

S. H. Phark

19 papers receiving 357 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. H. Phark South Korea 10 264 167 156 122 116 19 367
P. K. Rout India 12 322 1.2× 277 1.7× 183 1.2× 116 1.0× 105 0.9× 36 456
D. P. Leusink Netherlands 7 310 1.2× 227 1.4× 165 1.1× 92 0.8× 93 0.8× 8 403
F. C. Tsao Taiwan 7 193 0.7× 107 0.6× 153 1.0× 109 0.9× 129 1.1× 15 338
T. M. Pekarek United States 14 353 1.3× 219 1.3× 152 1.0× 158 1.3× 199 1.7× 48 484
Jacob Tosado United States 7 269 1.0× 127 0.8× 98 0.6× 101 0.8× 115 1.0× 11 361
Raghava P. Panguluri United States 10 248 0.9× 236 1.4× 134 0.9× 147 1.2× 95 0.8× 14 398
Omor Shoron United States 12 249 0.9× 141 0.8× 118 0.8× 122 1.0× 197 1.7× 22 385
Chuanchuan Gu China 12 244 0.9× 151 0.9× 125 0.8× 100 0.8× 86 0.7× 26 358
J. S. Parker United States 10 321 1.2× 302 1.8× 160 1.0× 235 1.9× 81 0.7× 12 530
Zilan Wang China 10 297 1.1× 116 0.7× 76 0.5× 88 0.7× 271 2.3× 20 401

Countries citing papers authored by S. H. Phark

Since Specialization
Citations

This map shows the geographic impact of S. H. Phark's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. H. Phark with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. H. Phark more than expected).

Fields of papers citing papers by S. H. Phark

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. H. Phark. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. H. Phark. The network helps show where S. H. Phark may publish in the future.

Co-authorship network of co-authors of S. H. Phark

This figure shows the co-authorship network connecting the top 25 collaborators of S. H. Phark. A scholar is included among the top collaborators of S. H. Phark based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. H. Phark. S. H. Phark is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Phark, S. H. & Seung Chul Chae. (2015). Initial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure. Journal of Physics D Applied Physics. 48(15). 155102–155102. 10 indexed citations
2.
Phark, S. H., et al.. (2013). Reduction of charge fluctuation energies in ultrathin NiO films on Ag(001). Surface Science. 616. 12–18. 6 indexed citations
3.
Phark, S. H., et al.. (2012). Scanning tunneling spectroscopy of epitaxial graphene nanoisland on Ir(111). Nanoscale Research Letters. 7(1). 255–255. 12 indexed citations
4.
Phark, S. H., et al.. (2012). Atomic structure and spectroscopy of graphene edges on Ir(111). Physical Review B. 86(4). 21 indexed citations
5.
Kim, Hogyoung, et al.. (2012). Schottky contacts to polar and nonpolar n-type GaN. Journal of the Korean Physical Society. 60(1). 104–107. 2 indexed citations
6.
Phark, S. H., et al.. (2011). Characterization of Pt/a-Plane GaN Schottky Contacts Using Conductive Atomic Force Microscopy. Journal of Nanoscience and Nanotechnology. 11(2). 1413–1416. 1 indexed citations
7.
Phark, S. H., et al.. (2011). Observation of Barrier Inhomogeneity in Pt/a-plane n-type GaN Schottky Contacts. Journal of the Korean Physical Society. 58(5(1)). 1356–1360. 5 indexed citations
8.
Phark, S. H., et al.. (2011). Direct Observation of Electron Confinement in Epitaxial Graphene Nanoislands. ACS Nano. 5(10). 8162–8166. 61 indexed citations
9.
Kim, Hogyoung, S. H. Phark, Keun Man Song, et al.. (2011). Electrical Characterization of Pt Schottky Contacts to a-plane n-type GaN. AIP conference proceedings. 923–924. 3 indexed citations
10.
Kim, Haeri, Dongwook Kim, & S. H. Phark. (2010). Transport behaviours and nanoscopic resistance profiles of electrically stressed Pt/TiO2/Ti planar junctions. Journal of Physics D Applied Physics. 43(50). 505305–505305. 3 indexed citations
11.
Phark, S. H., et al.. (2010). Current transport in Pt Schottky contacts toa-plane n-type GaN. Journal of Physics D Applied Physics. 43(16). 165102–165102. 29 indexed citations
12.
Chang, Young Jun, Choong H. Kim, S. H. Phark, et al.. (2009). Fundamental Thickness Limit of Itinerant FerromagneticSrRuO3Thin Films. Physical Review Letters. 103(5). 57201–57201. 139 indexed citations
13.
Phark, S. H., Ranju Jung, Young Jun Chang, Tae Won Noh, & Dongwook Kim. (2009). Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures. Applied Physics Letters. 94(2). 19 indexed citations
14.
Phark, S. H., Young Jun Chang, Tae Won Noh, & J.-S. Kim. (2009). Initial stages of nickel oxide growth on Ag(001) by pulsed laser deposition. Physical Review B. 80(3). 8 indexed citations
15.
Phark, S. H., et al.. (2007). Growth of a single layer gold stripe and investigation of the preferable growth direction on reconstructed Au(1 1 1) surface using STM. Current Applied Physics. 8(6). 822–827. 2 indexed citations
16.
Phark, S. H., et al.. (2006). Study on the films of a single-molecule magnet Mn12 modified by the selective insertion of a sulfur-terminated ligand. Journal of Magnetism and Magnetic Materials. 310(2). e483–e485. 5 indexed citations
17.
Israel, Casey, Changbae Hyun, Alex de Lozanne, S. H. Phark, & Z. G. Khim. (2006). Compact variable-temperature magnetic force microscope with optical access and lateral cantilever positioning. Review of Scientific Instruments. 77(2). 14 indexed citations
18.
Phark, S. H., Zheong G. Khim, Beom Jin Kim, et al.. (2004). Atomic Force Microscopy Study of Mn12O12(O2CC4H3S)16(H2O)4Single-Molecule Magnet Adsorbed on Au Surface. Japanese Journal of Applied Physics. 43(12). 8273–8277. 16 indexed citations
19.
Yang, Jun-Won, Sang Don Bu, Tae Won Noh, et al.. (2003). Surface structures of a Co-doped anatase TiO2 (001) film investigated by scanning tunneling microscopy. Applied Physics Letters. 82(18). 3080–3082. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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