S. C. Kan

457 total citations
31 papers, 352 citations indexed

About

S. C. Kan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. C. Kan has authored 31 papers receiving a total of 352 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in S. C. Kan's work include Semiconductor Lasers and Optical Devices (15 papers), Semiconductor Quantum Structures and Devices (13 papers) and Photonic and Optical Devices (10 papers). S. C. Kan is often cited by papers focused on Semiconductor Lasers and Optical Devices (15 papers), Semiconductor Quantum Structures and Devices (13 papers) and Photonic and Optical Devices (10 papers). S. C. Kan collaborates with scholars based in United States, China and Hong Kong. S. C. Kan's co-authors include Kam Y. Lau, A. Yariv, Tzong‐Yuan Wu, Y. L. Ho, Tzu-Liang Chan, K. K. Fung, Ngai‐Man Cheung, Chung-En Zah, George K. Wong and G. Griffel and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. C. Kan

30 papers receiving 333 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. C. Kan United States 11 284 282 37 36 30 31 352
A. Jeffery United States 3 272 1.0× 211 0.7× 22 0.6× 63 1.8× 42 1.4× 3 317
C. Ribbat Germany 9 338 1.2× 336 1.2× 22 0.6× 82 2.3× 26 0.9× 13 383
Chin‐Yao Tsai United Kingdom 9 221 0.8× 257 0.9× 39 1.1× 45 1.3× 24 0.8× 21 298
D. J. Lovering United Kingdom 7 320 1.1× 206 0.7× 19 0.5× 77 2.1× 13 0.4× 10 357
B. M. Holmes United Kingdom 12 235 0.8× 348 1.2× 20 0.5× 15 0.4× 38 1.3× 39 395
A. Ramdane France 11 260 0.9× 287 1.0× 22 0.6× 63 1.8× 25 0.8× 39 356
Rozenn Piron France 11 307 1.1× 311 1.1× 35 0.9× 51 1.4× 47 1.6× 30 363
X. Zhang United States 10 181 0.6× 123 0.4× 16 0.4× 173 4.8× 31 1.0× 14 359
Shuai Shao China 11 343 1.2× 126 0.4× 23 0.6× 108 3.0× 39 1.3× 34 404
Gray Lin Taiwan 11 371 1.3× 397 1.4× 21 0.6× 51 1.4× 27 0.9× 76 448

Countries citing papers authored by S. C. Kan

Since Specialization
Citations

This map shows the geographic impact of S. C. Kan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. C. Kan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. C. Kan more than expected).

Fields of papers citing papers by S. C. Kan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. C. Kan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. C. Kan. The network helps show where S. C. Kan may publish in the future.

Co-authorship network of co-authors of S. C. Kan

This figure shows the co-authorship network connecting the top 25 collaborators of S. C. Kan. A scholar is included among the top collaborators of S. C. Kan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. C. Kan. S. C. Kan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Liu, Yuxin, et al.. (2024). Modulating ultrafast carrier dynamics behavior via vacancy engineering of ReSe2 with Se vacancy for efficient electrochemical activity. Chemical Engineering Journal. 487. 150724–150724. 10 indexed citations
5.
Li, Hongyu, et al.. (2024). Optimizing excited state adsorption and carrier dynamics of metal doped zinc oxide by p-d orbital modulation for efficient reverse saturation absorption. Journal of Alloys and Compounds. 1008. 176777–176777. 1 indexed citations
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Kan, S. C., et al.. (2024). Growth of vertical type InSe/TMDs heterostructures for efficient charge transfer and nonlinear optical performance. Applied Surface Science. 656. 159705–159705. 2 indexed citations
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Jiang, Xiaomeng, et al.. (2024). Promoting the optoelectronic and nonlinear optics properties of MoS2 nanosheets via metal Al anchoring. Optical Materials. 151. 115426–115426. 2 indexed citations
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Kan, S. C., et al.. (2005). Surface-micromachined Movable SOI Optical Waveguides. Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95. 1. 348–350. 3 indexed citations
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Fung, K. K., et al.. (1998). Observation of Localized Electromagnetic Waves in Three-Dimensional Networks Of Waveguides. Physical Review Letters. 81(25). 5540–5543. 82 indexed citations
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Ho, J., et al.. (1996). Large Core (~60 pm) SO1 Multimode Waveguides for Optical Interconnect. 1 indexed citations
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Wu, Tzong‐Yuan, et al.. (1993). Influence of separate-confinement layer band structure on the transport-limited modulation bandwidth in quantum well lasers. Applied Physics Letters. 63(4). 441–443. 12 indexed citations
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Kan, S. C., et al.. (1991). Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser. Applied Physics Letters. 58(2). 110–112. 16 indexed citations
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Kan, S. C., et al.. (1991). Optically controlled resonant tunneling in a double-barrier diode. Journal of Applied Physics. 69(5). 3384–3386. 11 indexed citations
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Kan, S. C., et al.. (1991). Optical switching of a new middle trace in an optically controlled parallel resonant tunneling device−Observation and modeling. Applied Physics Letters. 58(14). 1548–1550. 3 indexed citations
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Kan, S. C. & A. Yariv. (1990). Lifetime of the quasi-bound state in the quantum well in a double-barrier structure with a localized imaginary potential. Journal of Applied Physics. 67(4). 1957–1961. 5 indexed citations
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Kalem, Ş., Jen‐Inn Chyi, C. W. Litton, et al.. (1988). Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates. Applied Physics Letters. 53(7). 562–564. 24 indexed citations
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Kan, S. C. & A. Yariv. (1988). The ultimate frequency response and time evolution of resonant tunneling in double-barrier structures. Journal of Applied Physics. 64(6). 3098–3105. 6 indexed citations
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Kan, S. C., H. Morkoç̌, & A. Yariv. (1988). GaAs/AlAs double-barrier resonant tunneling structure on Si with large peak to valley ratio at room temperature. Applied Physics Letters. 52(26). 2250–2251. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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