R.E. Scheuerlein

2.0k citations

18 papers · 1.4k indexed · 1 hit paper · h-index 11

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Magnetic properties of thin films
- Quantum and electron transport phenomena
Electronic, Optical and Magnetic Materials top 5%
- Magnetic Properties and Applications
- Magnetic and transport properties of perovskites and related materials

Papers in ⓘ

Electrical and Electronic Engineering 15
- Semiconductor materials and devices 9
- Advancements in Semiconductor Devices and Circuit Design 7
- Advanced Memory and Neural Computing 5
- Low-power high-performance VLSI design 4
- Advancements in PLL and VCO Technologies 3
Atomic and Molecular Physics, and Optics 5
- Magnetic properties of thin films 5

Co-authors: S. Parkin (4 shared papers)P. L. Trouilloud (3 shared papers)Yu Lu (3 shared papers)K. P. Roche (2 shared papers)David W. Abraham (2 shared papers)W. J. Gallagher (2 shared papers)E. J. O’Sullivan (1 shared paper)R. Beyers (1 shared paper)
Journals: IEEE Journal of Solid-State Circuits (7 papers)IEEE Circuits and Devices Magazine (1 paper)IEICE Transactions on Electronics (1 paper)Journal of Applied Physics (1 paper)Physical Review Letters (1 paper)
Partner nations: United States Japan

In The Last Decade

R.E. Scheuerlein

18 papers receiving 1.3k citations

Hit Papers

align trajectories log scale

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) 1999 · 915 citations

Peers

Countries citing papers authored by R.E. Scheuerlein

Since Specialization

Citations

This map shows the geographic impact of R.E. Scheuerlein's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.E. Scheuerlein with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.E. Scheuerlein more than expected).

Fields of papers citing papers by R.E. Scheuerlein

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.E. Scheuerlein. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.E. Scheuerlein. The network helps show where R.E. Scheuerlein may publish in the future.

Co-authors

The 25 scholars most cited alongside R.E. Scheuerlein, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R.E. Scheuerlein Line = papers co-authored together R.E. Scheuerlein links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) Journal of Applied Physics ·S. Parkin, K. P. Roche, M. G. Samant, Philip M. Rice, R. Beyers, R.E. Scheuerlein, E. J. O’Sullivan, S. Brown, J. Bucchigano, David W. Abraham, Yu Lu, M. J. Rooks, P. L. Trouilloud, R. Wanner, W. J. Gallagher Hit paper breakdown →	1999	915
2	Magnetization Reversal in Micron-Sized Magnetic Thin Films Physical Review Letters ·R. H. Koch, J. Deak, David W. Abraham, P. L. Trouilloud, R. A. Altman, Yu Lu, W. J. Gallagher, R.E. Scheuerlein, K. P. Roche, S. Parkin	1998	152
3	Memories of tomorrow IEEE Circuits and Devices Magazine ·W. Reohr, H. Honigschmid, R. P. Robertazzi, D. Gogl, Francesco Pesavento, S. Lammers, K. Lewis, Christine Arndt, Yu Lu, H. Viehmann, R.E. Scheuerlein, Li-Kong Wang, P. L. Trouilloud, S. Parkin, W. J. Gallagher, Georg Müller	2002	62
4	A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell R.E. Scheuerlein, W. J. Gallagher, S. Parkin, A. Lee, S. Ray, R. P. Robertazzi, W. Reohr	2002	50
5	A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's IEEE Journal of Solid-State Circuits ·Nicky Lu, P.E. Cottrell, Winston J. Craig, S. Dash, D.L. Critchlow, R. Mohler, B.J. Machesney, T.H. Ning, W. Noble, R. Parent, R.E. Scheuerlein, E. Sprogis, Lewis M. Terman	1986	46
6	512-Mb PROM with a three-dimensional array of diode/antifuse memory cells IEEE Journal of Solid-State Circuits ·Mark Johnson, Ali Al-Shamma, D. Bosch, Matthew Crowley, M. Farmwald, L. Fasoli, Alper Ilkbahar, B. Kleveland, T. Lee, Tz-yi Liu, Quang K. Nguyen, R.E. Scheuerlein, K. So, T. Thorp	2003	43
7	512 Mb PROM with 8 layers of antifuse/diode cells Matthew Crowley, Ali Al-Shamma, D. Bosch, M. Farmwald, L. Fasoli, Alper Ilkbahar, Mark Johnson, B. Kleveland, T. Lee, Tz-yi Liu, Quang Nguyen, R.E. Scheuerlein, K. So, T. Thorp	2003	20
8	The SPT cell&#8212;A new substrate-plate trench cell for DRAMs Nicky Lu, P.E. Cottrell, Winston J. Craig, S. Dash, D.L. Critchlow, R. Mohler, B.J. Machesney, T.H. Ning, W. Noble, R. Parent, R.E. Scheuerlein, E. Sprogis, Lewis M. Terman	1985	18
9	A 22-ns 1-Mbit CMOS high-speed DRAM with address multiplexing IEEE Journal of Solid-State Circuits ·Nicky Lu, G. Bronner, Koji Kitamura, R.E. Scheuerlein, W.H. Henkels, S.H. Dhong, Y. Katayama, T. Kirihata, H. Niijima, R. Franch, W. Wang, Michiru Nishiwaki, F. L. Pesavento, T.V. Rajeevakumar, Y. Sakaue, Yuya Suzuki, Yusuke Iguchi, Edgar Toshiro Yano	1989	14
10	Magneto-resistive IC memory limitations and architecture implications R.E. Scheuerlein	2002	13
11	A 14-ns 14-Mb CMOS DRAM with 300-mW active power IEEE Journal of Solid-State Circuits ·T. Kirihata, S.H. Dhong, Koji Kitamura, T. Sunaga, Y. Katayama, R.E. Scheuerlein, Akashi Satoh, Y. Sakaue, Keiji Tobimatsu, Kohji Hosokawa, Takashi Saitoh, Takefumi Yoshikawa, Hiroyuki Hashimoto, M. Kazusawa	1992	11
12	A 64K FET Dynamic Random Access Memory: Design Considerations and Description IBM Journal of Research and Development ·Tien-Yu Lo, R.E. Scheuerlein, R. Tamlyn	1980	7
13	A large V/sub DS/ data retention test pattern for DRAM's IEEE Journal of Solid-State Circuits ·R. Franch, S.H. Dhong, R.E. Scheuerlein	1992	5
14	A Pulsed Sensing Scheme With A Limited Bit-Line Swing T. Kirihata, Y. Katayama, R.E. Scheuerlein, Y. Sakaue, Akashi Satoh, T. Sunaga, Takefumi Yoshikawa, Koji Kitamura, S.H. Dhong	1991	5
15	16.4 512Mb PROM with 8 Layers of Antifuse/Diode Cells Matthew Crowley, Ali Al-Shamma, D. Bosch, M. Farmwald, Luca Fasoli, Alper Ilkbahar, Mark Johnson, B. Kleveland, Thomas Lee, Tz-yi Liu, Quang Nguyen, R.E. Scheuerlein, Kenneth So, T. Thorp, Matrix Semiconductor	2003	5
16	A Pulsed Sensing Scheme with a Limited Bit-Line Swing IEICE Transactions on Electronics ·R.E. Scheuerlein, Y. Katayama, T. Kirihata, Y. Sakaue, Akashi Satoh, T. Sunaga, Takefumi Yoshikawa, Koji Kitamura, S.H. Dhong	1992	2
17	Offset word-line architecture for scaling DRAMs to the gigabit level IEEE Journal of Solid-State Circuits ·R.E. Scheuerlein, J.D. Meindl	1988	2
18	A pulsed sensing scheme with a limited bit-line swing IEEE Journal of Solid-State Circuits ·R.E. Scheuerlein, Y. Katayama, T. Kirihata, Y. Sakaue, Akashi Satoh, T. Sunaga, Takefumi Yoshikawa, Koji Kitamura, S.H. Dhong	1992	1

About R.E. Scheuerlein

R.E. Scheuerlein is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Bioengineering and Electronic, Optical and Magnetic Materials, having authored 18 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Magnetic properties of thin films (5 papers), Advanced Memory and Neural Computing (5 papers), Low-power high-performance VLSI design (4 papers), Advancements in PLL and VCO Technologies (3 papers), Analog and Mixed-Signal Circuit Design (2 papers) and Magnetic and transport properties of perovskites and related materials (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.0k citations), Electronic, Optical and Magnetic Materials (524 citations), Condensed Matter Physics (312 citations), Electrical and Electronic Engineering (612 citations) and Structural Biology (13 citations). R.E. Scheuerlein has collaborated with scholars based in United States and Japan. Frequent co-authors include S. Parkin, P. L. Trouilloud, Yu Lu, K. P. Roche, David W. Abraham, W. J. Gallagher, E. J. O’Sullivan, R. Beyers, M. G. Samant and Philip M. Rice. Their work appears in journals such as IEEE Journal of Solid-State Circuits, IEEE Circuits and Devices Magazine, IEICE Transactions on Electronics, Journal of Applied Physics and Physical Review Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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