R. Murri

1.4k total citations
95 papers, 1.2k citations indexed

About

R. Murri is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Murri has authored 95 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 66 papers in Materials Chemistry and 29 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Murri's work include Thin-Film Transistor Technologies (36 papers), Silicon Nanostructures and Photoluminescence (29 papers) and Solid-state spectroscopy and crystallography (18 papers). R. Murri is often cited by papers focused on Thin-Film Transistor Technologies (36 papers), Silicon Nanostructures and Photoluminescence (29 papers) and Solid-state spectroscopy and crystallography (18 papers). R. Murri collaborates with scholars based in Italy, India and Poland. R. Murri's co-authors include C. Manfredotti, L. Vasanelli, N. Pinto, V. Augelli, Aurora Rizzo, A. Quirini, L. Morresi, F. D’Orazio, F. Lucari and L. Schiavulli and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Murri

91 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Murri Italy 20 818 720 330 211 129 95 1.2k
R. A. Powell United States 16 375 0.5× 505 0.7× 242 0.7× 102 0.5× 86 0.7× 54 801
Hood Chatham United States 11 416 0.5× 597 0.8× 277 0.8× 58 0.3× 79 0.6× 25 1.0k
L. V. C. Assali Brazil 17 845 1.0× 610 0.8× 509 1.5× 174 0.8× 82 0.6× 101 1.3k
William E. Case United States 11 523 0.6× 517 0.7× 289 0.9× 55 0.3× 168 1.3× 30 936
M.C. Rossi Italy 17 677 0.8× 415 0.6× 119 0.4× 76 0.4× 144 1.1× 83 845
W. Zulehner Germany 14 1.1k 1.3× 1.2k 1.6× 432 1.3× 174 0.8× 156 1.2× 37 1.6k
J. Oswald Czechia 19 923 1.1× 839 1.2× 628 1.9× 138 0.7× 205 1.6× 164 1.4k
C. P. Beetz United States 17 535 0.7× 209 0.3× 109 0.3× 85 0.4× 154 1.2× 45 936
F. J. Crowne United States 14 1.0k 1.3× 797 1.1× 369 1.1× 212 1.0× 245 1.9× 57 1.5k
H. Yamamoto Japan 16 401 0.5× 447 0.6× 382 1.2× 180 0.9× 63 0.5× 79 980

Countries citing papers authored by R. Murri

Since Specialization
Citations

This map shows the geographic impact of R. Murri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Murri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Murri more than expected).

Fields of papers citing papers by R. Murri

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Murri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Murri. The network helps show where R. Murri may publish in the future.

Co-authorship network of co-authors of R. Murri

This figure shows the co-authorship network connecting the top 25 collaborators of R. Murri. A scholar is included among the top collaborators of R. Murri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Murri. R. Murri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Coscia, U., G. Ambrosone, D. K. Basa, et al.. (2010). Morphological and structural modifications induced in a-Si1−x C x :H films by excimer laser annealing. Applied Physics A. 100(4). 1163–1168. 1 indexed citations
2.
Pinto, N., L. Morresi, R. Murri, et al.. (2008). Si quantum dots for solar cell fabrication. Materials Science and Engineering B. 159-160. 66–69. 12 indexed citations
3.
Murri, R., et al.. (2006). Analysis of the X-ray Work Flow in Two Diagnostic Imaging Departments With and Without a RIS/PACS System. Journal of Digital Imaging. 19(S1). 18–28. 19 indexed citations
4.
Zaia, Annamaria, et al.. (2006). MR Imaging and Osteoporosis: Fractal Lacunarity Analysis of Trabecular Bone. IEEE Transactions on Information Technology in Biomedicine. 10(3). 484–489. 33 indexed citations
5.
Morresi, L., et al.. (2005). Magnetic and transport polaron percolation in diluted GeMn films. Materials Science and Engineering B. 126(2-3). 197–201. 19 indexed citations
6.
Pinto, N., L. Morresi, R. Murri, et al.. (2005). Magnetic and electronic transport percolation in epitaxialGe1–xMnxfilms. Physical Review B. 72(16). 76 indexed citations
7.
Ambrosone, G., et al.. (2004). Structural, optical and electrical characterizations of μc-Si:H films deposited by PECVD. Solar Energy Materials and Solar Cells. 87(1-4). 375–386. 11 indexed citations
8.
D’Orazio, F., F. Lucari, S. Santucci, et al.. (2003). Magneto-optical properties of epitaxial Mn Ge1− films. Journal of Magnetism and Magnetic Materials. 262(1). 158–161. 19 indexed citations
9.
Murri, R., N. Pinto, G. Ambrosone, U. Coscia, & Pellegrino Musto. (2002). Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature. Journal of Non-Crystalline Solids. 299-302. 902–906. 3 indexed citations
10.
Pinto, N., et al.. (2002). Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE. Materials Science and Engineering B. 89(1-3). 234–237. 1 indexed citations
11.
Kępińska, Mirosława, M. Nowak, Z. D. Kovalyuk, & R. Murri. (2001). Temperature Dependence of Optical Energy Gap of Gallium Selenide. 8(3-4). 251–259. 1 indexed citations
12.
Pinto, N., R. Murri, & R. Rinaldi. (1998). Cluster-size distribution of SiGe alloys grown by MBE. Thin Solid Films. 336(1-2). 53–57. 6 indexed citations
13.
Sberveglieri, Giorgio, et al.. (1996). An Al2O3 sensor for low humidity content: characterization by impedance spectroscopy. Sensors and Actuators B Chemical. 32(1). 1–5. 21 indexed citations
14.
Ivanda, Mile, et al.. (1994). Raman study of gallium arsenide thin films. Journal of Non-Crystalline Solids. 170(3). 263–269. 8 indexed citations
15.
Augelli, V., et al.. (1983). Hall mobility in doped and undoped amorphous Si:H,Cl films. Journal of Non-Crystalline Solids. 59-60. 481–484. 7 indexed citations
16.
Augelli, V., R. Murri, & L. Schiavulli. (1982). Optical and electrical properties of glow discharge silicon films. Thin Solid Films. 90(2). 153–159. 4 indexed citations
17.
Augelli, V., A.M. Mancini, R. Murri, et al.. (1979). Influence of iodine doping on the electrical properties of GaSe. Materials Chemistry. 4(3). 429–436. 8 indexed citations
18.
Manfredotti, C., R. Murri, A. Quirini, & L. Vasanelli. (1977). PbI/sub 2/ as nuclear particle detector. IEEE Transactions on Nuclear Science. 2 indexed citations
19.
Manfredotti, C., et al.. (1977). Electrical properties ofp-type GaSe. ˜Il œNuovo cimento della Società italiana di fisica. B/˜Il œNuovo cimento B. 39(1). 257–268. 53 indexed citations
20.
Manfredotti, C., R. Murri, A. Quirini, & L. Vasanelli. (1976). Photoelectronic properties of n-GaSe. physica status solidi (a). 38(2). 685–693. 56 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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