R B Beall

1.1k total citations
28 papers, 915 citations indexed

About

R B Beall is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, R B Beall has authored 28 papers receiving a total of 915 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 7 papers in Computational Mechanics. Recurrent topics in R B Beall's work include Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (13 papers) and Semiconductor materials and interfaces (10 papers). R B Beall is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (13 papers) and Semiconductor materials and interfaces (10 papers). R B Beall collaborates with scholars based in United Kingdom, Finland and France. R B Beall's co-authors include J. J. Harris, R.C. Newman, J. B. Clegg, R. Murray, John Maguire, J. Wagner, M. Ramsteiner, M J L Sangster, P.J. Wright and J. Woodhead and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R B Beall

28 papers receiving 857 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R B Beall United Kingdom 15 686 613 176 113 106 28 915
M. López‐López Mexico 14 477 0.7× 614 1.0× 422 2.4× 302 2.7× 46 0.4× 169 975
A. Majerfeld United States 19 819 1.2× 769 1.3× 226 1.3× 211 1.9× 17 0.2× 58 998
H. Temkin United States 9 314 0.5× 398 0.6× 107 0.6× 106 0.9× 24 0.2× 20 517
E. Bigan United States 14 341 0.5× 424 0.7× 142 0.8× 188 1.7× 23 0.2× 31 641
T. R. Fullowan United States 18 422 0.6× 815 1.3× 101 0.6× 190 1.7× 61 0.6× 66 865
C. J. Miner Canada 15 401 0.6× 496 0.8× 140 0.8× 56 0.5× 49 0.5× 55 599
M. T. Emeny United Kingdom 16 678 1.0× 564 0.9× 215 1.2× 91 0.8× 35 0.3× 43 803
H. F. Lockwood United States 17 642 0.9× 736 1.2× 109 0.6× 57 0.5× 58 0.5× 41 914
C. Jagannath United States 16 647 0.9× 585 1.0× 204 1.2× 126 1.1× 39 0.4× 35 820
Katsuzo Kaminishi Japan 13 723 1.1× 845 1.4× 130 0.7× 231 2.0× 39 0.4× 38 989

Countries citing papers authored by R B Beall

Since Specialization
Citations

This map shows the geographic impact of R B Beall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R B Beall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R B Beall more than expected).

Fields of papers citing papers by R B Beall

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R B Beall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R B Beall. The network helps show where R B Beall may publish in the future.

Co-authorship network of co-authors of R B Beall

This figure shows the co-authorship network connecting the top 25 collaborators of R B Beall. A scholar is included among the top collaborators of R B Beall based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R B Beall. R B Beall is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wagner, J., Matthias Maier, R. Murray, et al.. (1991). Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy. Journal of Applied Physics. 69(2). 971–974. 23 indexed citations
2.
Maude, D. K., Tim Foster, L. Dmowski, et al.. (1991). Studies of the DX Center Using Hydrostatic Pressure. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 10. 121–144. 4 indexed citations
3.
Dumelow, T., T.J. Parker, D. R. Tilley, R B Beall, & J. J. Harris. (1991). Observation of surface plasmons in doped superlattices using far infrared attenuated total reflection. Solid State Communications. 77(4). 253–256. 12 indexed citations
4.
Beall, R B, et al.. (1990). W-band GaAs Gunn diodes with high output power. Solid-State Electronics. 33(8). 1035–1037. 4 indexed citations
5.
Clegg, J. B. & R B Beall. (1989). Measurement of narrow Si dopant distributions in GaAs by SIMS. Surface and Interface Analysis. 14(6-7). 307–314. 46 indexed citations
6.
Harris, J. J., R B Beall, J. B. Clegg, et al.. (1989). Si migration effects in GaAs/(Al,Ga)As heterojunction and δ-doped structures. Journal of Crystal Growth. 95(1-4). 257–259. 12 indexed citations
7.
Beall, R B, et al.. (1989). Post-growth diffusion of Si in delta -doped GaAs grown by MBE. Semiconductor Science and Technology. 4(12). 1171–1175. 40 indexed citations
8.
Murray, R., R.C. Newman, M J L Sangster, et al.. (1989). The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering. Journal of Applied Physics. 66(6). 2589–2596. 133 indexed citations
9.
Beall, R B, et al.. (1989). W-band GaAs camel-cathode Gunn devices produced by MBE. Electronics Letters. 25(13). 871–873. 8 indexed citations
10.
Portal, J.C., D. K. Maude, Tim Foster, et al.. (1988). Pressure-dependent studies of the DX centre in Si- and Sn-doped n+GaAs. Superlattices and Microstructures. 4(1). 33–38. 6 indexed citations
11.
Airaksinen, Veli-Matti, J. J. Harris, D. E. Lacklison, et al.. (1988). The effect of strong localization on the mobility of electrons in modulation-doped inverted structures. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(4). 1151–1155. 7 indexed citations
12.
Newman, R.C., R. Murray, B. Pajot, et al.. (1988). The passivation of Be acceptors in GaAs by exposure to a hydrogen plasma. Semiconductor Science and Technology. 3(4). 356–360. 50 indexed citations
13.
Beall, R B, J. B. Clegg, & J. J. Harris. (1988). Migration of Si in δ-doped GaAs. Semiconductor Science and Technology. 3(6). 612–615. 67 indexed citations
14.
Maguire, John, R. Murray, R.C. Newman, R B Beall, & J. J. Harris. (1987). Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy. Applied Physics Letters. 50(9). 516–518. 103 indexed citations
15.
Murray, R., et al.. (1987). Characterisation of Epitaxial MBE and MOCVD GaAs DOPED with Donors or Acceptors Using FTIR Spectroscopy. MRS Proceedings. 104. 5 indexed citations
16.
Beall, R B, et al.. (1985). On the mechanism of formation of AsGa+anti-site defects in electron-irradiated n-type GaAs. Journal of Physics C Solid State Physics. 18(25). L763–L767. 10 indexed citations
17.
Beall, R B, et al.. (1985). The observation of antisite defects in n-type and undoped GaAs following electron irradiation and annealing. Journal of Physics C Solid State Physics. 18(17). 3273–3283. 14 indexed citations
18.
Goltzené, A., Bertrand Meyer, C. Schwab, et al.. (1985). Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs. Journal of Applied Physics. 57(12). 5196–5198. 19 indexed citations
19.
Beall, R B, et al.. (1984). The generation by electron irradiation of arsenic anti-site defects in n-type GaAs. Journal of Physics C Solid State Physics. 17(15). 2653–2659. 29 indexed citations
20.
Beall, R B, et al.. (1984). The production and structure of the P-P3anti-site defect in electron-irradiated n-type GaP. Journal of Physics C Solid State Physics. 17(36). L963–L968. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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