P. Ranson

2.2k total citations
96 papers, 1.9k citations indexed

About

P. Ranson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Ranson has authored 96 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in P. Ranson's work include Plasma Diagnostics and Applications (33 papers), Spectroscopy and Quantum Chemical Studies (19 papers) and Semiconductor materials and devices (18 papers). P. Ranson is often cited by papers focused on Plasma Diagnostics and Applications (33 papers), Spectroscopy and Quantum Chemical Studies (19 papers) and Semiconductor materials and devices (18 papers). P. Ranson collaborates with scholars based in France, United States and India. P. Ranson's co-authors include R. Ouillon, Mohamed Boufnichel, Philippe Lefaucheux, Rémi Dussart, S. Califano, Thomas Tillocher, X. Mellhaoui, A. Bouchoule, J. Chapelle and G. Marcos and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

P. Ranson

93 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Ranson France 27 1.2k 642 491 411 385 96 1.9k
A. C. Adams United States 21 1.2k 1.0× 666 1.0× 434 0.9× 352 0.9× 263 0.7× 48 2.0k
J. A. Mucha United States 21 1.1k 0.9× 1.1k 1.7× 351 0.7× 404 1.0× 508 1.3× 54 1.9k
Peter K. Schenck United States 22 685 0.6× 757 1.2× 552 1.1× 153 0.4× 229 0.6× 66 1.8k
Shingo Ichimura Japan 22 1.2k 1.0× 813 1.3× 542 1.1× 318 0.8× 159 0.4× 183 2.0k
Theodosia Gougousi United States 25 1.0k 0.8× 819 1.3× 520 1.1× 257 0.6× 83 0.2× 59 1.8k
Tatsuo Okada Japan 22 880 0.7× 894 1.4× 506 1.0× 458 1.1× 621 1.6× 148 1.9k
D. B. Fenner United States 18 774 0.6× 789 1.2× 461 0.9× 184 0.4× 103 0.3× 83 1.6k
Hiroyuki Sakaue Japan 30 1.0k 0.8× 967 1.5× 1.3k 2.7× 350 0.9× 896 2.3× 208 2.8k
R. Shuker Israel 18 573 0.5× 1.0k 1.6× 756 1.5× 116 0.3× 80 0.2× 85 2.0k
Vladimir S. Ban United States 21 1.0k 0.9× 444 0.7× 643 1.3× 204 0.5× 180 0.5× 64 1.6k

Countries citing papers authored by P. Ranson

Since Specialization
Citations

This map shows the geographic impact of P. Ranson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Ranson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Ranson more than expected).

Fields of papers citing papers by P. Ranson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Ranson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Ranson. The network helps show where P. Ranson may publish in the future.

Co-authorship network of co-authors of P. Ranson

This figure shows the co-authorship network connecting the top 25 collaborators of P. Ranson. A scholar is included among the top collaborators of P. Ranson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Ranson. P. Ranson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dussart, Rémi, et al.. (2013). A novel amorphization–etch alternating process for Si(1 0 0). Journal of Micromechanics and Microengineering. 23(4). 45023–45023. 1 indexed citations
2.
Boufnichel, Mohamed, et al.. (2010). Deep GaN etching by inductively coupled plasma and induced surface defects. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 28(5). 1226–1233. 49 indexed citations
3.
Ranson, P., et al.. (2008). Electrothermal model for MIM TaON capacitors during ESD HBM pulses. 631–632. 1 indexed citations
4.
Dussart, Rémi, X. Mellhaoui, Thomas Tillocher, et al.. (2007). The passivation layer formation in the cryo-etching plasma process. Microelectronic Engineering. 84(5-8). 1128–1131. 31 indexed citations
5.
Boufnichel, Mohamed, et al.. (2004). Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process. Microelectronic Engineering. 77(3-4). 327–336. 49 indexed citations
6.
Marcos, G., A. Rhallabi, & P. Ranson. (2004). Topographic and kinetic effects of the SF6/O2 rate during a cryogenic etching process of silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(4). 1912–1922. 20 indexed citations
7.
Ouillon, R., et al.. (2003). Pressure effect at room temperature on the low‐energy Raman spectra of nitromethane‐h3 and ‐d3 up to 45 GPa. Journal of Raman Spectroscopy. 34(10). 819–825. 7 indexed citations
8.
9.
Bonnaud, Olivier, et al.. (1999). Deep discrete trenches filled by in-situ doped polysilicon: an alternative method for junction insulating box. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4 indexed citations
10.
Ranson, P., et al.. (1999). Deep anisotropic etching of silicon. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 2270–2273. 82 indexed citations
12.
Brault, Pascal, et al.. (1994). In situ Raman spectroscopy of silicon surfaces during SF6plasma etching. Journal of Physics Condensed Matter. 6(1). L1–L6. 4 indexed citations
13.
Ranson, P., et al.. (1985). Spatially resolved spectroscopic diagnostics of an argon MIP produced by surface wave propagation (Surfatron). Spectrochimica Acta Part B Atomic Spectroscopy. 40(4). 641–651. 52 indexed citations
14.
Ranson, P., et al.. (1985). Experimental studies of long life phonons in molecular crystals by high resolution raman spectroscopy. Journal de Chimie Physique. 82. 169–177. 8 indexed citations
15.
Peretti, P., et al.. (1981). Spin—lattice relaxation and thermal deactivation of X traps in 4,4′-dichlorobenzophenone. Chemical Physics. 56(1). 135–144. 3 indexed citations
16.
Ranson, P., Olivier Vallée, & J. Chapelle. (1977). Étude expérimentale de l'émission de Bremsstrahlung électron atome dans un jet de plasma d'argon. Revue de Physique Appliquée. 12(12). 1829–1834. 3 indexed citations
17.
Vallée, Olivier, P. Ranson, & J. Chapelle. (1976). The trajectory effect in the calculation of the phaseshift for a collision between neutral atoms. Journal of Physics B Atomic and Molecular Physics. 9(10). L289–L291. 2 indexed citations
18.
Ranson, P., et al.. (1976). Étude du couplage naphtalène-benzophénone dans des cristaux de benzophénone dopés au naphtalène. Journal de Chimie Physique. 73. 545–554.
19.
Ranson, P., et al.. (1975). Line intensities and interpretation of low frequency Raman spectra of benzophenone h10, and benzophenone d10, at T = 6K. Spectrochimica Acta Part A Molecular Spectroscopy. 31(9-10). 1277–1281. 6 indexed citations
20.
Ranson, P., et al.. (1975). Low frequency raman spectra of isotopic mixed benzophenone crystals. Chemical Physics Letters. 36(2). 203–206. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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