Osamu Ishiyama

2.2k total citations · 1 hit paper
38 papers, 1.9k citations indexed

About

Osamu Ishiyama is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, Osamu Ishiyama has authored 38 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 10 papers in Computational Mechanics. Recurrent topics in Osamu Ishiyama's work include Semiconductor materials and devices (11 papers), Ion-surface interactions and analysis (10 papers) and Electronic and Structural Properties of Oxides (8 papers). Osamu Ishiyama is often cited by papers focused on Semiconductor materials and devices (11 papers), Ion-surface interactions and analysis (10 papers) and Electronic and Structural Properties of Oxides (8 papers). Osamu Ishiyama collaborates with scholars based in Japan, Germany and Canada. Osamu Ishiyama's co-authors include Makoto Shinohara, Mamoru Yoshimoto, Tatsuro Maeda, Hideomi Koinuma, M. Kawasaki, Kazuhiro Takahashi, Ryuta Tsuchiya, Tsuyoshi Ohnishi, Momoji Kubo and Ryuji Miura and has published in prestigious journals such as Science, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Osamu Ishiyama

35 papers receiving 1.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Atomic Control of the SrTiO ₃ Crystal Surface

1994 1.0k citations Tatsuro Maeda, Makoto Shinohara et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Osamu Ishiyama Japan	12	1.5k	876	851	339	241	38	1.9k
B. Claflin United States	21	1.7k 1.1×	961 1.1×	1.5k 1.7×	399 1.2×	205 0.9×	86	2.3k
S. Koyama Japan	6	2.4k 1.6×	1.1k 1.3×	1.3k 1.5×	308 0.9×	177 0.7×	9	2.6k
M. Inoue Japan	21	1.0k 0.7×	654 0.7×	807 0.9×	228 0.7×	391 1.6×	131	1.6k
Mark E. White United States	25	990 0.6×	476 0.5×	774 0.9×	225 0.7×	239 1.0×	47	1.4k
K. H. Wong Hong Kong	20	1.4k 0.9×	550 0.6×	820 1.0×	136 0.4×	191 0.8×	113	1.7k
Sunglae Cho South Korea	16	1.7k 1.1×	971 1.1×	688 0.8×	320 0.9×	441 1.8×	50	1.9k
Tapas Ganguli India	22	1.1k 0.7×	749 0.9×	597 0.7×	287 0.8×	331 1.4×	133	1.5k
Anil K. Bhatnagar India	20	1.2k 0.8×	480 0.5×	713 0.8×	474 1.4×	338 1.4×	157	1.9k
Y. D. Park South Korea	13	1.9k 1.2×	993 1.1×	672 0.8×	574 1.7×	225 0.9×	22	2.1k
W. Walukiewicz United States	17	855 0.6×	330 0.4×	599 0.7×	303 0.9×	442 1.8×	48	1.3k

Countries citing papers authored by Osamu Ishiyama

Since Specialization

Citations

This map shows the geographic impact of Osamu Ishiyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Osamu Ishiyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Osamu Ishiyama more than expected).

Fields of papers citing papers by Osamu Ishiyama

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Osamu Ishiyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Osamu Ishiyama. The network helps show where Osamu Ishiyama may publish in the future.

Co-authorship network of co-authors of Osamu Ishiyama

This figure shows the co-authorship network connecting the top 25 collaborators of Osamu Ishiyama. A scholar is included among the top collaborators of Osamu Ishiyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Osamu Ishiyama. Osamu Ishiyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Haghighirad, Amir A., Ryo Ichikawa, Toshio Miyamachi, et al.. (2025). STM imaging and electronic correlation in van der Waals ferromagnet Fe₃GeTe₂. Japanese Journal of Applied Physics. 64(4). 40805–40805. 2 indexed citations

Miyamachi, Toshio, Takushi Iimori, K. Yamamoto, et al.. (2022). Layer-resolved magnetic moments in N-surfactant assisted FeNi ordered alloy thin films. Japanese Journal of Applied Physics. 61(SL). SL1001–SL1001. 2 indexed citations

Ishiyama, Osamu, et al.. (2017). Development of Large-Scale Pot Sinter Simulator with Material Segregation Charging System. Tetsu-to-Hagane. 103(10). 564–569. 3 indexed citations

Kitabatake, Makoto, et al.. (2014). Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films. Materials science forum. 778-780. 979–984. 11 indexed citations

Ishiyama, Osamu, Kentaro Tamura, Atsushi Shimozato, et al.. (2014). Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment. Materials science forum. 778-780. 545–548. 11 indexed citations

Ishiyama, Osamu, Hideki Sako, Kentaro Tamura, et al.. (2014). Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers. Japanese Journal of Applied Physics. 53(4S). 04EP15–04EP15. 17 indexed citations

Ishiyama, Osamu, Atsushi Shimozato, Kentaro Tamura, et al.. (2013). Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability. Materials science forum. 740-742. 745–748. 47 indexed citations

Kitabatake, Makoto, Osamu Ishiyama, Kentaro Tamura, et al.. (2013). The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films. Materials science forum. 740-742. 451–454. 5 indexed citations

Ishiyama, Osamu, et al.. (2008). Dopant profiling on 4H silicon carbide P[+]N junction by scanning probe and secondary electron microscopy (Proceedings of PSA-07 (International Symposium on Practical Surface Analysis) November 25-28, 2007, Kanazawa, Japan). Journal of Surface Analysis. 14(4). 441–443. 2 indexed citations

10.

Ishiyama, Osamu. (2004). High-Resolution Imaging of Recording Marks on Phase-Change Film by Lateral Force Microscopy. Japanese Journal of Applied Physics. 43(9R). 6356–6356. 7 indexed citations

11.

Yamane, Hisanori, Toru H. Okabe, Osamu Ishiyama, Yoshio Waseda, & Masahiko Shimada. (2001). Ternary nitrides prepared in the Li3N–Mg3N2 system at 900–1000 K. Journal of Alloys and Compounds. 319(1-2). 124–130. 26 indexed citations

12.

Fuse, Takashi, Osamu Ishiyama, Makoto Shinohara, & Yoshiaki Kido. (1997). Monte Carlo simulation of angular-scan spectra for coaxial impact collision ion scattering spectroscopy (CAICISS). Surface Science. 372(1-3). 350–354. 5 indexed citations

13.

Ishiyama, Osamu, et al.. (1996). A STUDY ON CHANGES OF VILLAGE HOUSE CLUSTER FORMATION AND MODERINIZATION OF LIFESTYLE IN A KOREAN FARMING VILLAGE : The case of Sangman village, Jindo island, Korea from 1900 to 1993. Journal of Architecture and Planning (Transactions of AIJ). 61(479). 169–178.

14.

Yoshimoto, Mamoru, Tatsuro Maeda, Tsuyoshi Ohnishi, et al.. (1995). Room-Temperature Epitaxial Growth of CeO₂ Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface. Japanese Journal of Applied Physics. 34(6A). L688–L688. 98 indexed citations

15.

Nakamura, Toshikazu, et al.. (1995). Electrical properties of BaSnO3 in substitution of antimony for tin and lanthanum for barium. Journal of Materials Science. 30(6). 1556–1560. 34 indexed citations

16.

Yoshimoto, Mamoru, Tatsuro Maeda, Tsuyoshi Ohnishi, et al.. (1995). Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication. Applied Physics Letters. 67(18). 2615–2617. 326 indexed citations

17.

Yoshimoto, Mamoru, Tatsuro Maeda, Hideomi Koinuma, et al.. (1994). Topmost surface analysis of SrTiO3 (001) by coaxial impact-collision ion scattering spectroscopy. Applied Physics Letters. 65(25). 3197–3199. 94 indexed citations

18.

Shinohara, Makoto, et al.. (1993). Cleaning of Si (100) surface by As ionized cluster beam prior to epitaxial growth of GaAs. Journal of Applied Physics. 73(11). 7845–7850. 6 indexed citations

19.

Ishiyama, Osamu, et al.. (1991). Microstructure and Mechanical Properties of Bainite Containing Martensite and Retained Austenite in Low Carbon HSLA Steels. Materials Transactions JIM. 32(8). 715–728. 31 indexed citations

20.

Tsutsui, Kazuo, et al.. (1991). Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method. Japanese Journal of Applied Physics. 30(3R). 454–454. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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