O. J. Pitts

816 total citations
40 papers, 657 citations indexed

About

O. J. Pitts is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, O. J. Pitts has authored 40 papers receiving a total of 657 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in O. J. Pitts's work include Semiconductor Quantum Structures and Devices (30 papers), Advanced Semiconductor Detectors and Materials (15 papers) and Radio Frequency Integrated Circuit Design (7 papers). O. J. Pitts is often cited by papers focused on Semiconductor Quantum Structures and Devices (30 papers), Advanced Semiconductor Detectors and Materials (15 papers) and Radio Frequency Integrated Circuit Design (7 papers). O. J. Pitts collaborates with scholars based in Canada, United States and Switzerland. O. J. Pitts's co-authors include S. P. Watkins, C. R. Bolognesi, M.W. Dvorak, David Lackner, N. Matine, Michael F. Steger, M. L. W. Thewalt, M. L. W. Thewalt, K. L. Kavanagh and Y. T. Cherng and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

O. J. Pitts

37 papers receiving 635 citations

Peers

Countries citing papers authored by O. J. Pitts

Since Specialization

Citations

This map shows the geographic impact of O. J. Pitts's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. J. Pitts with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. J. Pitts more than expected).

Fields of papers citing papers by O. J. Pitts

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. J. Pitts. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. J. Pitts. The network helps show where O. J. Pitts may publish in the future.

Co-authorship network of co-authors of O. J. Pitts

This figure shows the co-authorship network connecting the top 25 collaborators of O. J. Pitts. A scholar is included among the top collaborators of O. J. Pitts based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. J. Pitts. O. J. Pitts is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Wavefront Sensing and Correction via Compressive Sensing and Advanced Photonic Devices 2023 ·NPARC ·Haitham S. Khallaf, (unknown), Antony Orth, O. J. Pitts, R. N. Kleiman, Steve Hranilovic	1
2	Maximizing atmospheric-disturbed fiber coupling efficiency with speckle-based phase retrieval and a single-pixel camera 2023 ·Applied Optics ·(unknown), Michael D. Taylor, O. J. Pitts, Costel Flueraru, Antony Orth, Steve Hranilovic	1
3	Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes 2022 ·Optical and Quantum Electronics ·Alexandre W. Walker, (unknown), A. J. SpringThorpe, O. J. Pitts	0
4	Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique 2022 ·IEEE Journal of Selected Topics in Quantum Electronics ·(unknown), (unknown), (unknown), Myung-Jae Lee, Claudio Bruschini, A. J. SpringThorpe, Alexandre W. Walker, Costel Flueraru, O. J. Pitts, Edoardo Charbon	11
5	Dopant Depth Distribution Effects on the Gain Profile of Avalanche Photodiodes Fabricated by Zn Diffusion 2020 ·NPARC ·O. J. Pitts, O. Salehzadeh, (unknown), Alexandre W. Walker, A. J. SpringThorpe	1
6	Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP 2013 ·Journal of Crystal Growth ·O. J. Pitts, (unknown), A. J. SpringThorpe	5
7	Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes 2013 ·Journal of Crystal Growth ·O. J. Pitts, (unknown), (unknown), S. Raymond, A. J. SpringThorpe	9
8	InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations 2012 ·Journal of Applied Physics ·David Lackner, Michael F. Steger, M. L. W. Thewalt, O. J. Pitts, Y. T. Cherng, S. P. Watkins, E. Plis, Sanjay Krishna	52
9	InAsSb and InPSb materials for mid infrared photodetectors 2010 ·David Lackner, O. J. Pitts, (unknown), Y. T. Cherng, P. M. Mooney, M. L. W. Thewalt, E. Plis, S. P. Watkins	2
10	Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm 2009 ·Applied Physics Letters ·David Lackner, O. J. Pitts, Michael F. Steger, A. Yang, M. L. W. Thewalt, S. P. Watkins	46
11	In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1) 2009 ·Semiconductor Science and Technology ·(unknown), David Lackner, O. J. Pitts, S. P. Watkins, P. M. Mooney	10
12	Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications 2008 ·Journal of Crystal Growth ·O. J. Pitts, David Lackner, Y. T. Cherng, S. P. Watkins	12
13	Ultrahigh Performance Staggered Lineup ("Type-II") InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors : Review Paper 2002 ·C. R. Bolognesi, (unknown), N. Matine, O. J. Pitts, S. P. Watkins	0
14	Abrupt junction InP/GaAsSb/InP double heterojunction bipolar transistors with F/sub T/ as high as 250 GHz and BV/sub CEO/<6 V 2002 ·M.W. Dvorak, O. J. Pitts, S. P. Watkins, C. R. Bolognesi	10
15	Structural effects of carbon in GaSb grown by metalorganic vapor phase epitaxy 2002 ·Journal of Crystal Growth ·S. P. Watkins, R Wiersma, (unknown), O. J. Pitts, C. R. Bolognesi	0
16	RDS characterization of GaAsSb and GaSb grown by MOVPE 2002 ·Journal of Crystal Growth ·O. J. Pitts, S. P. Watkins, (unknown)	18
17	Local vibrational modes of carbon in GaSb and GaAsSb 2002 ·Applied Physics Letters ·(unknown), R Wiersma, (unknown), O. J. Pitts, Cameron Dale, C. R. Bolognesi, S. P. Watkins	11
18	Evolution of GaSb/GaAs Quantum Dot Strain Relaxation 2002 ·Microscopy and Microanalysis ·(unknown), O. J. Pitts, S. P. Watkins, K. L. Kavanagh	1
19	300 GHz InP/GaAsSb/InP Double HBTs with High Current Capability and V 2001 ·M.W. Dvorak, C. R. Bolognesi, O. J. Pitts, S. P. Watkins	39
20	P-type carbon doping of GaSb 2001 ·Journal of Electronic Materials ·R Wiersma, J. A. H. Stotz, O. J. Pitts, (unknown), M. L. W. Thewalt, S. P. Watkins	13

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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