N. Yokouchi

872 total citations
70 papers, 646 citations indexed

About

N. Yokouchi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, N. Yokouchi has authored 70 papers receiving a total of 646 indexed citations (citations by other indexed papers that have themselves been cited), including 67 papers in Electrical and Electronic Engineering, 53 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in N. Yokouchi's work include Semiconductor Lasers and Optical Devices (58 papers), Photonic and Optical Devices (55 papers) and Semiconductor Quantum Structures and Devices (40 papers). N. Yokouchi is often cited by papers focused on Semiconductor Lasers and Optical Devices (58 papers), Photonic and Optical Devices (55 papers) and Semiconductor Quantum Structures and Devices (40 papers). N. Yokouchi collaborates with scholars based in Japan, United States and United Kingdom. N. Yokouchi's co-authors include Aaron J. Danner, Kent D. Choquette, Kenichi Iga, A. Kasukawa, Fumio Koyama, Tomoyuki Miyamoto, James J. Raftery, N. Iwai, Seiji Uchiyama and Takashi Uchida and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and IEEE Journal of Quantum Electronics.

In The Last Decade

N. Yokouchi

64 papers receiving 596 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Yokouchi Japan 12 613 487 42 34 30 70 646
B. Vögele United Kingdom 11 289 0.5× 271 0.6× 22 0.5× 34 1.0× 35 1.2× 24 335
E. Derouin France 12 832 1.4× 562 1.2× 34 0.8× 30 0.9× 29 1.0× 54 859
F. Chatenoud Canada 13 485 0.8× 430 0.9× 26 0.6× 47 1.4× 33 1.1× 56 539
U. Koren United States 15 772 1.3× 425 0.9× 26 0.6× 37 1.1× 11 0.4× 59 809
Jean-Marc Fédéli France 13 506 0.8× 437 0.9× 94 2.2× 42 1.2× 69 2.3× 26 560
E. Smalbrugge Netherlands 13 477 0.8× 268 0.6× 61 1.5× 20 0.6× 52 1.7× 61 516
Sung-Bock Kim South Korea 13 416 0.7× 344 0.7× 74 1.8× 59 1.7× 48 1.6× 53 497
Dominic F. G. Gallagher United Kingdom 11 379 0.6× 274 0.6× 84 2.0× 72 2.1× 21 0.7× 44 438
John Gelleta Japan 8 405 0.7× 411 0.8× 52 1.2× 45 1.3× 16 0.5× 16 499
M. S. Salib United States 7 271 0.4× 313 0.6× 67 1.6× 17 0.5× 13 0.4× 14 342

Countries citing papers authored by N. Yokouchi

Since Specialization
Citations

This map shows the geographic impact of N. Yokouchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Yokouchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Yokouchi more than expected).

Fields of papers citing papers by N. Yokouchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Yokouchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Yokouchi. The network helps show where N. Yokouchi may publish in the future.

Co-authorship network of co-authors of N. Yokouchi

This figure shows the co-authorship network connecting the top 25 collaborators of N. Yokouchi. A scholar is included among the top collaborators of N. Yokouchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Yokouchi. N. Yokouchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Funabashi, M., et al.. (2012). Semiconductor optical amplifier with polarization diversity for optical interconnect. 78–79. 1 indexed citations
2.
Hasegawa, Junichi, et al.. (2010). Hybrid integration of U-turn layout semiconductor waveguide and silica-based planar lightwave circuit. 886–887. 3 indexed citations
3.
Kageyama, Takeo, et al.. (2005). Wide temperature operation of 850-nm VCSEL and isolator-free operation of 1300-nm VCSEL for a variety of applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5737. 8–8. 4 indexed citations
4.
Miyamoto, Tomoyuki, et al.. (2005). CBE grown 1.5 μm GaInAsP/InP Surface Emitting Lasers. j75 c ii. 212–213.
5.
Danner, Aaron J., et al.. (2003). Scaling of small-aperture photonic crystal vertical cavity lasers. Conference on Lasers and Electro-Optics. 88. 2169–2170. 1 indexed citations
6.
Danner, Aaron J., et al.. (2003). Coupled-defect photonic crystal vertical cavity surface emitting lasers. Electronics Letters. 39(18). 1323–1324. 37 indexed citations
7.
Yokouchi, N., Aaron J. Danner, & Kent D. Choquette. (2003). Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures. Applied Physics Letters. 82(9). 1344–1346. 65 indexed citations
8.
Yokouchi, N., Aaron J. Danner, & Kent D. Choquette. (2003). Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure. Applied Physics Letters. 82(21). 3608–3610. 28 indexed citations
9.
Tachibana, Masato, et al.. (2002). Transverse Mode Control and Reduction of Thermal Resistance in 850 nm Oxide Confined VCSELs. IEICE Transactions on Electronics. 85(1). 64–70. 2 indexed citations
10.
Mori, Kenichi, Tomoyuki Miyamoto, N. Yokouchi, et al.. (2002). Band discontinuity reduction of i-GaInAsP/p-InP for improving 1.55 μm GaInAsP/InP surface emitting laser performances. 311–314. 1 indexed citations
11.
Kasukawa, A., et al.. (1996). Structural dependence of 1.3 µm narrow beamlasers fabricated by selective MOCVD. Electronics Letters. 32(14). 1304–1305. 10 indexed citations
12.
13.
Uchida, Takashi, et al.. (1993). GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE). Japanese Journal of Applied Physics. 32(2R). 760–760. 8 indexed citations
14.
Yokouchi, N., et al.. (1992). An Optical Absorption Property of Highly Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy. Japanese Journal of Applied Physics. 31(5R). 1255–1255. 9 indexed citations
15.
Uchida, T., et al.. (1991). GaInAs/InP MQW and DBR growth for surface emitting lasers by CBE. Journal of Crystal Growth. 111(1-4). 1062–1065. 1 indexed citations
16.
Yokouchi, N., et al.. (1991). CBE growth of GaInAs/InP wafers for surface emitting lasers. Journal of Crystal Growth. 107(1-4). 1055–1056. 1 indexed citations
17.
Yokouchi, N., Fumio Koyama, & Kenichi Iga. (1990). Estimation of tunable wavelength range in surface emitting laser using intra-cavity quantum-well tuner. Tokyo Tech Research Repository (Tokyo Institute of Technology). 73(9). 1473–1475. 4 indexed citations
18.
Uchida, Takashi, et al.. (1990). Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy. Japanese Journal of Applied Physics. 29(12A). L2146–L2146. 6 indexed citations
19.
Uchida, Takashi, et al.. (1990). Growth of Ga0.47In0.53As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE). Japanese Journal of Applied Physics. 29(9R). 1771–1771. 1 indexed citations
20.
Yokouchi, N., et al.. (1990). High rate growth of Ga/sub 0.47/In/sub 0.53/As/InP by chemical beam epitaxy. e72. 144–147. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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