N. Szydlo

497 total citations
20 papers, 409 citations indexed

About

N. Szydlo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Szydlo has authored 20 papers receiving a total of 409 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Szydlo's work include Thin-Film Transistor Technologies (13 papers), Silicon and Solar Cell Technologies (6 papers) and Semiconductor materials and devices (6 papers). N. Szydlo is often cited by papers focused on Thin-Film Transistor Technologies (13 papers), Silicon and Solar Cell Technologies (6 papers) and Semiconductor materials and devices (6 papers). N. Szydlo collaborates with scholars based in France and Portugal. N. Szydlo's co-authors include Raymond A. Poirier, R. Poirier, J. Olivier, D. Rigaud, M. Valenza, J. Magariño, Jean Flahaut, Micheline Guittard, A. Likforman and D. Kaplan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

N. Szydlo

20 papers receiving 378 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. Szydlo France	13	369	161	91	37	24	20	409
V.F. Drobny United States	7	217 0.6×	207 1.3×	51 0.6×	25 0.7×	17 0.7×	19	361
Chih Hang Tung Singapore	7	473 1.3×	138 0.9×	71 0.8×	43 1.2×	42 1.8×	14	517
G. Agostinelli Belgium	11	621 1.7×	266 1.7×	197 2.2×	69 1.9×	10 0.4×	29	652
B. A. Ek United States	10	269 0.7×	140 0.9×	111 1.2×	80 2.2×	8 0.3×	12	316
Masato Koyama Japan	10	312 0.8×	121 0.8×	57 0.6×	21 0.6×	41 1.7×	46	339
E. Manea Romania	9	185 0.5×	99 0.6×	41 0.5×	92 2.5×	9 0.4×	77	267
Sarah R. McKibbin Sweden	13	415 1.1×	268 1.7×	161 1.8×	63 1.7×	15 0.6×	17	487
Wei-Hsun Lin Taiwan	11	237 0.6×	154 1.0×	170 1.9×	52 1.4×	25 1.0×	35	374
G. Pollack United States	16	775 2.1×	254 1.6×	90 1.0×	62 1.7×	19 0.8×	49	908
María Recamán Payo Belgium	13	344 0.9×	120 0.7×	148 1.6×	53 1.4×	7 0.3×	37	370

Countries citing papers authored by N. Szydlo

Since Specialization

Citations

This map shows the geographic impact of N. Szydlo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Szydlo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Szydlo more than expected).

Fields of papers citing papers by N. Szydlo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Szydlo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Szydlo. The network helps show where N. Szydlo may publish in the future.

Co-authorship network of co-authors of N. Szydlo

This figure shows the co-authorship network connecting the top 25 collaborators of N. Szydlo. A scholar is included among the top collaborators of N. Szydlo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Szydlo. N. Szydlo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Magariño, J., et al.. (2005). 15.4: Invited Paper: Design of integrated Drivers with Amorphous Silicon TFTs for Small Displays. Basic Concepts. SID Symposium Digest of Technical Papers. 36(1). 950–953. 30 indexed citations

Szydlo, N., et al.. (2003). Threshold‐voltage drift of amorphous‐silicon TFTs in integrated drivers for active‐matrix LCDs. Journal of the Society for Information Display. 11(3). 539–542. 14 indexed citations

Rigaud, D., et al.. (2000). 1/f noise modeling in long channel amorphous silicon thin film transistors. Journal of Applied Physics. 87(4). 1983–1989. 34 indexed citations

Rigaud, D., et al.. (1999). 1/f Noise in amorphous silicon thin film transistors: effect of scaling down. Solid-State Electronics. 43(4). 713–721. 20 indexed citations

Szydlo, N., et al.. (1998). <title>High-resolution projection valve with amorphous silicon AMLCD technology</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3296. 92–99. 25 indexed citations

Valenza, M., et al.. (1998). 1/f noise investigations in small channel length amorphous silicon thin film transistors. Journal of Applied Physics. 83(7). 3660–3667. 37 indexed citations

Szydlo, N., et al.. (1997). a‐Si self‐scanned 2.2‐in. EDTV projection LC light valve. Journal of the Society for Information Display. 5(1). 23–25. 2 indexed citations

Martin, Sandrine, et al.. (1997). 2D numerical simulation of a-Si:H TFTS: Application to parasitic contact resistances evaluation. Thin Solid Films. 296(1-2). 129–132. 2 indexed citations

Valenza, M., et al.. (1996). Conduction and 1/f noise analysis in amorphous silicon thin-film transistors. Journal of Applied Physics. 79(2). 923–928. 16 indexed citations

10.

Magariño, J., et al.. (1995). AMLCD with integrated drivers made with amorphous‐silicon TFTs. Journal of the Society for Information Display. 3(4). 177–180. 15 indexed citations

11.

Chartier, E., et al.. (1985). Dependence of A-Si:H Tfts Performances on Deposition and Process Parameters. MRS Proceedings. 53. 3 indexed citations

12.

Szydlo, N., et al.. (1984). New amorphous silicon nonlinear element for liquid crystal display addressing. Applied Physics Letters. 44(2). 205–206. 3 indexed citations

13.

Szydlo, N., et al.. (1982). High current post-hydrogenated chemical vapor deposited amorphous silicon p-i-n diodes. Applied Physics Letters. 40(11). 988–990. 9 indexed citations

14.

Szydlo, N., J. Magariño, & D. Kaplan. (1982). Post-hydrogenated chemical vapor deposited amorphous silicon Schottky diodes. Journal of Applied Physics. 53(7). 5044–5051. 15 indexed citations

15.

Likforman, A., et al.. (1980). Transitions de la forme de haute température α de In2Se3, de part et d'autre de la température ambiante. Journal of Solid State Chemistry. 33(1). 91–97. 45 indexed citations

16.

Szydlo, N. & R. Poirier. (1980). I-V and C-V characteristics of Au/TiO2 Schottky diodes. Journal of Applied Physics. 51(6). 3310–3312. 42 indexed citations

17.

Szydlo, N. & J. Olivier. (1979). Behavior of Au/InP Schottky diodes under heat treatment. Journal of Applied Physics. 50(3). 1445–1449. 42 indexed citations

18.

Szydlo, N. & R. Poirier. (1973). Alkaline-metals-silicon Schottky barriers. Journal of Applied Physics. 44(3). 1386–1387. 7 indexed citations

19.

Szydlo, N. & Raymond A. Poirier. (1971). Internal Photoemission Measurements in a Metal-Al2O3–Si System. Journal of Applied Physics. 42(12). 4880–4882. 43 indexed citations

20.

Szydlo, N., et al.. (1970). REVERSE I-V CHARACTERISTICS OF THE Na–Si SCHOTTKY BARRIER. Applied Physics Letters. 17(11). 477–478. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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