N. Presser

543 total citations
17 papers, 446 citations indexed

About

N. Presser is a scholar working on Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, N. Presser has authored 17 papers receiving a total of 446 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 14 papers in Materials Chemistry and 13 papers in Electrical and Electronic Engineering. Recurrent topics in N. Presser's work include Semiconductor Quantum Structures and Devices (16 papers), Quantum Dots Synthesis And Properties (10 papers) and Chalcogenide Semiconductor Thin Films (9 papers). N. Presser is often cited by papers focused on Semiconductor Quantum Structures and Devices (16 papers), Quantum Dots Synthesis And Properties (10 papers) and Chalcogenide Semiconductor Thin Films (9 papers). N. Presser collaborates with scholars based in Germany, United States and Austria. N. Presser's co-authors include J. Gutowski, G. Kudlek, I. Broser, H. Sitter, Kurt Hingerl, R. L. Gunshor, D. Menke, Stephen M. Durbin, E. Abramof and J. Gutowski and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

N. Presser

17 papers receiving 436 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Presser Germany 8 333 312 272 89 43 17 446
Mt. Wagner Sweden 11 323 1.0× 399 1.3× 130 0.5× 63 0.7× 69 1.6× 22 475
H. Priller Germany 9 277 0.8× 188 0.6× 90 0.3× 97 1.1× 40 0.9× 14 331
S.K. Chang South Korea 10 233 0.7× 288 0.9× 282 1.0× 31 0.3× 38 0.9× 33 385
F. Luckert United Kingdom 12 297 0.9× 342 1.1× 180 0.7× 43 0.5× 64 1.5× 23 421
C. Sandmann United States 9 186 0.6× 203 0.7× 199 0.7× 38 0.4× 47 1.1× 14 340
Ho‐Sang Kwack South Korea 14 331 1.0× 311 1.0× 235 0.9× 129 1.4× 104 2.4× 33 483
Gennadiy A. Medvedkin Japan 6 366 1.1× 278 0.9× 175 0.6× 145 1.6× 55 1.3× 8 447
S. Asher United States 13 455 1.4× 543 1.7× 211 0.8× 18 0.2× 24 0.6× 24 570
M. Parenteau Canada 9 327 1.0× 466 1.5× 187 0.7× 58 0.7× 32 0.7× 19 532
А. В. Кудрин Russia 11 206 0.6× 147 0.5× 264 1.0× 109 1.2× 58 1.3× 98 382

Countries citing papers authored by N. Presser

Since Specialization
Citations

This map shows the geographic impact of N. Presser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Presser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Presser more than expected).

Fields of papers citing papers by N. Presser

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Presser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Presser. The network helps show where N. Presser may publish in the future.

Co-authorship network of co-authors of N. Presser

This figure shows the co-authorship network connecting the top 25 collaborators of N. Presser. A scholar is included among the top collaborators of N. Presser based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Presser. N. Presser is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Wägner, Hans, et al.. (1994). High‐density and optical non‐linearity effects in epitaxially grown ZnTe layers. Advanced Materials for Optics and Electronics. 3(1-6). 33–39. 2 indexed citations
2.
Presser, N., et al.. (1994). Energy transfer processes via the interface of ZnSe/GaAs epilayers. Journal of Crystal Growth. 138(1-4). 820–825. 4 indexed citations
3.
Kudlek, G., N. Presser, Udo W. Pohl, et al.. (1992). Exciton complexes in ZnSe layers: a tool for probing the strain distribution. Journal of Crystal Growth. 117(1-4). 309–315. 15 indexed citations
4.
Kudlek, G., J. Hollandt, N. Presser, et al.. (1992). Dispersive and absorptive thermally induced optical bistability in ZnSe epilayers. Journal of Luminescence. 53(1-6). 363–366. 1 indexed citations
5.
Presser, N., G. Kudlek, & J. Gutowski. (1992). Excitonic processes in highly excited ZnSe epilayers. Journal of Luminescence. 53(1-6). 435–438. 7 indexed citations
6.
Presser, N., J. Gutowski, Kurt Hingerl, et al.. (1992). Impurity and defect distribution in ZnTe/GaAs epilayers of different thickness. Journal of Crystal Growth. 117(1-4). 290–296. 19 indexed citations
7.
Kudlek, G., N. Presser, J. Gutowski, et al.. (1991). Optical properties of molecular beam epitaxy grown ZnTe epilayers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1361. 150–150. 2 indexed citations
8.
Kudlek, G., N. Presser, J. Gutowski, et al.. (1991). Photoluminescence and excitation spectroscopy of ZnTe/GaAs epilayers grown by hot-wall epitaxy. Semiconductor Science and Technology. 6(9A). A90–A95. 21 indexed citations
9.
Kudlek, G., N. Presser, & J. Gutowski. (1991). Resonant Raman scattering at bound excitons in ZnSe/GaAs epilayers. Semiconductor Science and Technology. 6(9A). A83–A89. 5 indexed citations
10.
Kudlek, G., J. Hollandt, N. Presser, et al.. (1990). Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers. Superlattices and Microstructures. 8(4). 381–385. 2 indexed citations
11.
Gutowski, J., N. Presser, & G. Kudlek. (1990). Optical Properties of ZnSe Epilayers and Films. physica status solidi (a). 120(1). 11–59. 173 indexed citations
12.
Kudlek, G., N. Presser, J. Gutowski, et al.. (1990). Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot-wall epitaxy. Journal of Applied Physics. 68(11). 5630–5635. 19 indexed citations
13.
Presser, N., G. Kudlek, J. Gutowski, et al.. (1990). High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region. physica status solidi (b). 159(1). 443–448. 13 indexed citations
14.
Kudlek, G., J. Hollandt, N. Presser, et al.. (1990). Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy. Journal of Applied Physics. 68(5). 2532–2534. 7 indexed citations
15.
Kudlek, G., N. Presser, J. Gutowski, et al.. (1990). High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers. Journal of Crystal Growth. 101(1-4). 667–672. 15 indexed citations
16.
Gutowski, J., N. Presser, & I. Broser. (1988). Acceptor-exciton complexes in ZnO: A comprehensive analysis of their electronic states by high-resolution magnetooptics and excitation spectroscopy. Physical review. B, Condensed matter. 38(14). 9746–9758. 137 indexed citations
17.
Gutowski, J., et al.. (1988). Excitation and transmission spectroscopy of bound exciton complexes in wide-gap II–VI semiconductors under high excitation densities. Journal of Luminescence. 40-41. 433–434. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026