M. Takusagawa

915 total citations
52 papers, 743 citations indexed

About

M. Takusagawa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Instrumentation. According to data from OpenAlex, M. Takusagawa has authored 52 papers receiving a total of 743 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 44 papers in Atomic and Molecular Physics, and Optics and 5 papers in Instrumentation. Recurrent topics in M. Takusagawa's work include Semiconductor Quantum Structures and Devices (43 papers), Semiconductor Lasers and Optical Devices (42 papers) and Photonic and Optical Devices (22 papers). M. Takusagawa is often cited by papers focused on Semiconductor Quantum Structures and Devices (43 papers), Semiconductor Lasers and Optical Devices (42 papers) and Photonic and Optical Devices (22 papers). M. Takusagawa collaborates with scholars based in Japan. M. Takusagawa's co-authors include H. Imai, M. Yano, Hiroshi Nishi, Hiroshi Ishikawa, Takanori Fujiwara, M. Morimoto, Y. Nishitani, T. Tanahashi, Koichi Fujiwara and Nobuyuki Takagi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

M. Takusagawa

51 papers receiving 657 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Takusagawa Japan	17	709	587	58	56	35	52	743
W. Susaki Japan	16	758 1.1×	549 0.9×	48 0.8×	54 1.0×	58 1.7×	100	803
A. R. Goodwin United Kingdom	12	487 0.7×	399 0.7×	57 1.0×	42 0.8×	15 0.4×	34	562
K. Wakao Japan	14	495 0.7×	363 0.6×	32 0.6×	27 0.5×	12 0.3×	57	528
I. Sakuma Japan	13	512 0.7×	425 0.7×	58 1.0×	45 0.8×	14 0.4×	25	572
H. Namizaki Japan	15	669 0.9×	499 0.9×	54 0.9×	45 0.8×	53 1.5×	54	693
P.R. Selway United Kingdom	11	396 0.6×	298 0.5×	30 0.5×	17 0.3×	11 0.3×	20	430
J. Sebastian Germany	13	580 0.8×	358 0.6×	88 1.5×	42 0.8×	9 0.3×	68	625
T. Torikai Japan	17	713 1.0×	443 0.8×	23 0.4×	19 0.3×	131 3.7×	69	749
G. Beister Germany	11	402 0.6×	270 0.5×	61 1.1×	21 0.4×	7 0.2×	36	441
K.M. Dzurko United States	14	607 0.9×	465 0.8×	70 1.2×	17 0.3×	8 0.2×	38	649

Countries citing papers authored by M. Takusagawa

Since Specialization

Citations

This map shows the geographic impact of M. Takusagawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Takusagawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Takusagawa more than expected).

Fields of papers citing papers by M. Takusagawa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Takusagawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Takusagawa. The network helps show where M. Takusagawa may publish in the future.

Co-authorship network of co-authors of M. Takusagawa

This figure shows the co-authorship network connecting the top 25 collaborators of M. Takusagawa. A scholar is included among the top collaborators of M. Takusagawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Takusagawa. M. Takusagawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yano, M., et al.. (1983). Temperature characteristics of double-carrier-confinement (DCC) heterojunction InGaAsP(λ = 1.3 µm)/InP lasers. IEEE Journal of Quantum Electronics. 19(8). 1319–1327. 10 indexed citations

Takusagawa, M., et al.. (1982). Buried convex waveguide structure (GaAl)As injection lasers. IEEE Journal of Quantum Electronics. 18(10). 1688–1695. 5 indexed citations

Morimoto, Masahiro, et al.. (1982). New heterojunction InGaAsP/InP laser with high-temperature stability (T0 = 180 K). Applied Physics Letters. 41(5). 390–392. 5 indexed citations

Morimoto, M. & M. Takusagawa. (1982). Accelerated facet degradation of InGaAsP/InP double-heterostructure lasers in water. Journal of Applied Physics. 53(6). 4028–4037. 9 indexed citations

Wakao, K., et al.. (1982). Catastrophic degradation level of visible and infrared GaAlAs lasers. Applied Physics Letters. 41(12). 1113–1115. 12 indexed citations

Yano, M., H. Imai, & M. Takusagawa. (1981). Analysis of electrical, threshold, and temperature characteristics of InGaAsP/InP double- heterojunction lasers. IEEE Journal of Quantum Electronics. 17(9). 1954–1963. 29 indexed citations

Ishikawa, Hiroshi, et al.. (1981). Separated multi clad-layer stripe-geometry GaAlAs DH laser. IEEE Journal of Quantum Electronics. 17(7). 1226–1234. 11 indexed citations

Yano, M., et al.. (1981). High temperature characteristics of stripe-geometry InGaAsP/InP double-heterostructure lasers. IEEE Journal of Quantum Electronics. 17(5). 619–626. 22 indexed citations

Fujiwara, Takanori, et al.. (1981). Buried convex waveguide structure (GaAl) As injection lasers. Applied Physics Letters. 38(8). 605–607. 7 indexed citations

10.

Imai, H., et al.. (1980). Effect of growth terraces on threshold current density of (GaAl)As double-heterostructure laser. Applied Physics Letters. 37(4). 341–343. 1 indexed citations

11.

Imai, H., et al.. (1980). Long-lived high-power GaAlAs DH laser diodes. IEEE Journal of Quantum Electronics. 16(3). 248–250. 11 indexed citations

12.

Nishi, Hiroshi, M. Yano, & M. Takusagawa. (1980). Temperature Characteristics of InGaAsP/InP DH Lasers. MD4–MD4. 1 indexed citations

13.

Morimoto, M., et al.. (1980). Improvement of GaAs-GaAlAs double-heterostructure laser wafer by Ga1−xAlxAs buffer layer. Applied Physics Letters. 37(6). 503–505. 1 indexed citations

14.

Fujiwara, Koichi, et al.. (1979). Aging characteristics of Ga1−xAlxAs double-heterostructure lasers bonded with gold eutectic alloy solder. Applied Physics Letters. 34(10). 668–670. 26 indexed citations

15.

Fujiwara, Koichi, et al.. (1979). Analysis of deterioration in In solder for GaAlAs DH lasers. Applied Physics Letters. 35(11). 861–863. 15 indexed citations

16.

Fujiwara, Takanori, Nobuyuki Takagi, H. Imai, et al.. (1977). New phenomena on misfit dislocations in a GaAlAsP-GaAs heterojunction under light irradiation. IEEE Journal of Quantum Electronics. 13(8). 616–619. 7 indexed citations

17.

Takusagawa, M., et al.. (1975). A new sulfur diffused stripe-geometry DH laser. 490–493. 2 indexed citations

18.

Takusagawa, M., et al.. (1975). Packaged semiconductor lasers for optical-fiber transmission. IEEE Journal of Quantum Electronics. 11(9). 883–883.

19.

Takusagawa, M., et al.. (1973). A new stripe-geometry double heterojunction laser with internally striped planar (ISP) structure. 327–329. 1 indexed citations

20.

Nishizawa, Jun‐ichi, et al.. (1972). Conservation of Polarization in GaAs Junction LASER. Japanese Journal of Applied Physics. 11(3). 419–420. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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