M. Durlam

2.7k total citations
31 papers, 2.0k citations indexed

About

M. Durlam is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Durlam has authored 31 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Atomic and Molecular Physics, and Optics, 25 papers in Electrical and Electronic Engineering and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Durlam's work include Magnetic properties of thin films (25 papers), Advanced Memory and Neural Computing (15 papers) and Semiconductor materials and devices (7 papers). M. Durlam is often cited by papers focused on Magnetic properties of thin films (25 papers), Advanced Memory and Neural Computing (15 papers) and Semiconductor materials and devices (7 papers). M. Durlam collaborates with scholars based in United States. M. Durlam's co-authors include S. Tehrani, J. M. Slaughter, M. DeHerrera, J. Janesky, Jing Shi, N.D. Rizzo, B. N. Engel, R. W. Dave, G. Grynkewich and B. Butcher and has published in prestigious journals such as Journal of Applied Physics, Proceedings of the IEEE and IEEE Journal of Solid-State Circuits.

In The Last Decade

M. Durlam

31 papers receiving 1.9k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
M. Durlam 1.6k 1.2k 616 442 336 31 2.0k
M. DeHerrera 1.4k 0.9× 1.1k 0.9× 504 0.8× 351 0.8× 299 0.9× 28 1.8k
J. Janesky 1.2k 0.8× 977 0.8× 505 0.8× 334 0.8× 277 0.8× 25 1.6k
H. Yoda 1.3k 0.8× 987 0.8× 673 1.1× 374 0.8× 227 0.7× 96 1.7k
Yiming Huai 1.9k 1.2× 1.1k 0.9× 887 1.4× 561 1.3× 512 1.5× 85 2.4k
H. Hasegawa 1.6k 1.0× 1.1k 0.9× 750 1.2× 700 1.6× 468 1.4× 59 2.2k
N. Ishiwata 1.6k 1.0× 724 0.6× 911 1.5× 540 1.2× 548 1.6× 88 2.0k
S. Tehrani 2.6k 1.7× 1.8k 1.5× 932 1.5× 621 1.4× 619 1.8× 74 3.2k
R.E. Fontana 1.5k 1.0× 971 0.8× 816 1.3× 568 1.3× 453 1.3× 74 2.2k
Norikazu Ohshima 1.1k 0.7× 615 0.5× 594 1.0× 583 1.3× 432 1.3× 62 1.5k
Mahendra Pakala 913 0.6× 761 0.6× 435 0.7× 455 1.0× 241 0.7× 53 1.4k

Countries citing papers authored by M. Durlam

Since Specialization
Citations

This map shows the geographic impact of M. Durlam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Durlam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Durlam more than expected).

Fields of papers citing papers by M. Durlam

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Durlam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Durlam. The network helps show where M. Durlam may publish in the future.

Co-authorship network of co-authors of M. Durlam

This figure shows the co-authorship network connecting the top 25 collaborators of M. Durlam. A scholar is included among the top collaborators of M. Durlam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Durlam. M. Durlam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Durlam, M., B. Craigo, M. DeHerrera, et al.. (2007). Toggle MRAM: A highly-reliable Non-Volatile Memory. 1–2. 12 indexed citations
2.
Engel, B. N., Johan Åkerman, B. Butcher, et al.. (2005). A 4-Mb toggle MRAM based on a novel bit and switching method. IEEE Transactions on Magnetics. 41(1). 132–136. 348 indexed citations
3.
Åkerman, Johan, M. DeHerrera, M. Durlam, et al.. (2004). Demonstrated Reliability of 4-Mb MRAM. IEEE Transactions on Device and Materials Reliability. 4(3). 428–435. 47 indexed citations
4.
Grynkewich, G., Johan Åkerman, B. Butcher, et al.. (2004). Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions. MRS Bulletin. 29(11). 818–821. 12 indexed citations
5.
Tehrani, S., J. M. Slaughter, M. DeHerrera, et al.. (2003). Magnetoresistive random access memory using magnetic tunnel junctions. Proceedings of the IEEE. 91(5). 703–714. 313 indexed citations
6.
Durlam, M., M. DeHerrera, J. Calder, et al.. (2003). A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects. IEEE Journal of Solid-State Circuits. 38(5). 769–773. 107 indexed citations
7.
Durlam, M., et al.. (2002). P-HEMTs for low-voltage portable applications using filled gate fabrication process. 241–244. 4 indexed citations
8.
Durlam, M., et al.. (2002). AlGaAs/InGaAs power P-HEMTs for high-efficiency, low-voltage portable applications. 2. 551–553. 4 indexed citations
9.
Slaughter, J. M., R. W. Dave, M. DeHerrera, et al.. (2002). Fundamentals of MRAM Technology. Journal of Superconductivity. 15(1). 19–25. 50 indexed citations
10.
Tehrani, S., et al.. (2002). High density nonvolatile magnetoresistive RAM. 193–196. 17 indexed citations
11.
Tehrani, S., et al.. (2002). High density pseudo spin valve magnetoresistive RAM. 43–46. 1 indexed citations
12.
Tehrani, S., M. Durlam, J. M. Slaughter, et al.. (2000). Technology Status and Potential for High Speed Nonvolatile Magnetoresistive RAM. 116. 19–24. 1 indexed citations
13.
Tehrani, S., et al.. (1999). High density submicron magnetoresistive random access memory (invited). Journal of Applied Physics. 85(8). 5822–5827. 144 indexed citations
14.
Tehrani, S., et al.. (1999). Progress and outlook for MRAM technology. IEEE Transactions on Magnetics. 35(5). 2814–2819. 346 indexed citations
15.
Tehrani, S., et al.. (1999). Progress and outlook for MRAM technology. IEEE International Magnetics Conference. GA02–GA02. 8 indexed citations
16.
Nordquist, Kevin J., M. Durlam, Douglas J. Resnick, et al.. (1997). Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arrays. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(6). 2274–2278. 28 indexed citations
17.
Tehrani, S., et al.. (1997). Submicron spin valve magnetoresistive random access memory cell. Journal of Applied Physics. 81(8). 3992–3994. 45 indexed citations
18.
Pohm, A.V., R.S. Beech, J.M. Daughton, et al.. (1996). Experimental and analytical properties of 0.2-μm-wide, end-on, multilayer, giant magnetoresistance, read head sensors. Journal of Applied Physics. 79(8). 5889–5891. 5 indexed citations
19.
Huang, Jane-Hwa, et al.. (1996). NiGeW ohmic contacts on GaAs heterostructure epitaxial layers. Thin Solid Films. 290-291. 493–496. 2 indexed citations
20.
Durlam, M., et al.. (1993). Motorola readies low cost GaAs process for commercialization. III-Vs Review. 6(4). 26–29. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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