Ling Lv

1.3k total citations
66 papers, 1.0k citations indexed

About

Ling Lv is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ling Lv has authored 66 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 41 papers in Electrical and Electronic Engineering and 31 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ling Lv's work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (30 papers) and Semiconductor materials and devices (24 papers). Ling Lv is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (30 papers) and Semiconductor materials and devices (24 papers). Ling Lv collaborates with scholars based in China, United Kingdom and United States. Ling Lv's co-authors include Xiaohua Ma, Yue Hao, Zhanhu Guo, Qian Shao, Tingting Wu, Yanli Ma, Evan K. Wujcik, Yuan‐Ru Guo, Xingkui Guo and Kai Sun and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ling Lv

62 papers receiving 967 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ling Lv China 16 508 418 274 249 177 66 1.0k
Ahmad Shuhaimi Abu Bakar Malaysia 19 602 1.2× 403 1.0× 334 1.2× 810 3.3× 308 1.7× 122 1.3k
Jingqin Cui China 19 1.1k 2.1× 104 0.2× 258 0.9× 450 1.8× 186 1.1× 42 1.5k
Biao You China 16 464 0.9× 256 0.6× 471 1.7× 568 2.3× 132 0.7× 96 1.5k
Xinyu Wu China 15 300 0.6× 188 0.4× 706 2.6× 503 2.0× 329 1.9× 38 1.3k
Siyuan Liu China 19 405 0.8× 89 0.2× 233 0.9× 860 3.5× 115 0.6× 62 1.3k
Hongli Suo China 23 283 0.6× 911 2.2× 765 2.8× 1.0k 4.2× 338 1.9× 143 2.0k
Xinli Kou China 18 236 0.5× 86 0.2× 385 1.4× 446 1.8× 269 1.5× 40 1.0k
A. Abouelsayed Egypt 16 212 0.4× 127 0.3× 234 0.9× 387 1.6× 136 0.8× 37 720
K.K. Nagaraja India 20 530 1.0× 82 0.2× 554 2.0× 656 2.6× 543 3.1× 75 1.3k

Countries citing papers authored by Ling Lv

Since Specialization
Citations

This map shows the geographic impact of Ling Lv's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ling Lv with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ling Lv more than expected).

Fields of papers citing papers by Ling Lv

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ling Lv. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ling Lv. The network helps show where Ling Lv may publish in the future.

Co-authorship network of co-authors of Ling Lv

This figure shows the co-authorship network connecting the top 25 collaborators of Ling Lv. A scholar is included among the top collaborators of Ling Lv based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ling Lv. Ling Lv is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lv, Ling, Changjuan Guo, Mengdao Xing, et al.. (2025). Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases. IEEE Transactions on Electron Devices. 72(5). 2467–2473. 1 indexed citations
2.
Zheng, Xuefeng, Ling Lv, Yanrong Cao, et al.. (2024). Study on the single-event burnout mechanism of GaN MMIC power amplifiers. Applied Physics Letters. 124(8). 4 indexed citations
3.
Zheng, Xuefeng, Yuehua Hong, Ling Lv, et al.. (2024). Study on the Degradation Mechanism of GaN MMIC Power Amplifiers Under On-State With High Drain Bias. IEEE Transactions on Electron Devices. 71(8). 4530–4534. 1 indexed citations
4.
Zhang, Xin‐Xiang, Yanrong Cao, Chuan Chen, et al.. (2024). Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. Micromachines. 15(8). 950–950. 5 indexed citations
5.
Zheng, Xuefeng, Hao Zhang, Ling Lv, et al.. (2024). A Thorough Study on the Effect of 3-MeV Proton Irradiation on the Performance of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 71(12). 7319–7325.
6.
Zheng, Xuefeng, Yanrong Cao, Ling Lv, et al.. (2024). Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs. Applied Physics Letters. 124(17). 12 indexed citations
7.
Zheng, Xuefeng, Yuehua Hong, Xiaohu Wang, et al.. (2024). Investigation on Electrical Performance Degradation Mechanism of β-Ga₂O₃ Schottky Barrier Diodes Under 3 MeV Proton Radiation. IEEE Transactions on Electron Devices. 71(8). 4584–4589. 6 indexed citations
8.
Zheng, Xuefeng, Zijian Yuan, Yuehua Hong, et al.. (2024). Mo/Au β-Ga₂O₃ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications. IEEE Transactions on Electron Devices. 71(6). 3560–3564. 5 indexed citations
9.
Wang, Zhiheng, Yanrong Cao, Xin‐Xiang Zhang, et al.. (2023). Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor. Micromachines. 14(10). 1948–1948. 6 indexed citations
10.
Wang, Rui, Saisai Wang, Liang Yu, et al.. (2023). All‐in‐One Compression and Encryption Engine Based on Flexible Polyimide Memristor. SHILAP Revista de lepidopterología. 3(3). 2200082–2200082. 15 indexed citations
11.
Wang, Saisai, Rui Wang, Jing Sun, et al.. (2023). Biodegradable and flexible artificial nociceptor based on Mg/MgO threshold switching memristor. Science China Materials. 66(4). 1569–1577. 25 indexed citations
12.
Yang, Ling, Hao Lu, Meng Zhang, et al.. (2022). Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact. Journal of Applied Physics. 132(16). 3 indexed citations
13.
Zheng, Xuefeng, Ling Lv, Yanrong Cao, et al.. (2021). Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects. Semiconductor Science and Technology. 36(9). 95044–95044. 4 indexed citations
14.
Zheng, Xuefeng, Jiaduo Zhu, Yanrong Cao, et al.. (2020). Gamma-Irradiation-Accelerated Degradation in AlGaN-Based UVC LEDs Under Electrical Stress. IEEE Transactions on Nuclear Science. 68(2). 149–155. 4 indexed citations
15.
Guo, Hongxia, et al.. (2020). Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica. 69(7). 78501–78501. 3 indexed citations
16.
Zheng, Xuefeng, Guanjun Chen, Xiaohu Wang, et al.. (2020). Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure. AIP Advances. 10(6). 6 indexed citations
17.
Zheng, Xuefeng, Ling Lv, Chong Wang, et al.. (2019). A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage. Semiconductor Science and Technology. 35(1). 15018–15018. 9 indexed citations
18.
Liu, Linyue, Ao Liu, Song Bai, et al.. (2017). Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection. Scientific Reports. 7(1). 13376–13376. 59 indexed citations
19.
Cao, Yanrong, Peng Li, Qing Zhu, et al.. (2016). Investigation of the reverse voltage stress on the fluorine plasma treated AlGaN/GaN Schottky barrier diodes. 110. 1035–1037. 2 indexed citations
20.
Lv, Ling, Jian Zhou, Gang Zou, & Qijin Zhang. (2015). Quantitatively Probing Cross‐Termination in RAFT Polymerization by an Externally Applied Magnetic Field. Macromolecular Chemistry and Physics. 216(6). 614–620. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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