Ling Lv

1.3k citations

66 papers · 1.0k indexed · h-index 16

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 46
- GaN-based semiconductor devices and materials 46
Electronic, Optical and Magnetic Materials 31
- Ga2O3 and related materials 30

Co-authors: Xiaohua Ma (42 shared papers)Yue Hao (30 shared papers)Yuan‐Ru Guo (1 shared paper)Xingkui Guo (1 shared paper)Kai Sun (1 shared paper)Zhanhu Guo (1 shared paper)Evan K. Wujcik (1 shared paper)Yujie Fu (1 shared paper)
Journals: IEEE Transactions on Electron Devices (11 papers)IEEE Transactions on Nuclear Science (9 papers)Applied Physics Letters (6 papers)IEEE Electron Device Letters (3 papers)Journal of Applied Physics (2 papers)
Partner nations: China United Kingdom United States

In The Last Decade

Ling Lv

62 papers receiving 967 citations

Peers

Countries citing papers authored by Ling Lv

Since Specialization

Citations

This map shows the geographic impact of Ling Lv's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ling Lv with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ling Lv more than expected).

Fields of papers citing papers by Ling Lv

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ling Lv. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ling Lv. The network helps show where Ling Lv may publish in the future.

Co-authors

The 25 scholars most cited alongside Ling Lv, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ling Lv Line = papers co-authored together Ling Lv links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Porous lignin based poly (acrylic acid)/organo-montmorillonite nanocomposites: Swelling behaviors and rapid removal of Pb (II) ions Polymer ·Yanli Ma, Ling Lv, Yuan‐Ru Guo, Yujie Fu, Qian Shao, Tingting Wu, Sijie Guo, Kai Sun, Xingkui Guo, Evan K. Wujcik, Zhanhu Guo	2017	305
2	Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors Microelectronics Reliability ·Ling Lv, Jinbang Ma, Yanrong Cao, J.C. Zhang, W. Zhang, L. Li, Shengrui Xu, Xiaohua Ma, Xiangjuan Ren, Yue Hao	2011	64
3	Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection Scientific Reports ·Linyue Liu, Ao Liu, Song Bai, Ling Lv, Peng Jin, Xiaoping Ouyang	2017	59
4	Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation Applied Physics Letters ·Xuefeng Zheng, Shuai-Shuai Dong, Peng Ji, Chong Wang, Yunlong He, Ling Lv, Xiaohua Ma, Yue Hao	2018	42
5	Fluorescent Porous Film Modified Polymer Optical Fiber via “Click” Chemistry: Stable Dye Dispersion and Trace Explosive Detection ACS Applied Materials & Interfaces ·Jiajun Ma, Ling Lv, Gang Zou, Qijin Zhang	2014	37
6	Enhanced g_mand f_TWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge IEEE Electron Device Letters ·Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, Qing Zhu, Yang Lu, Meng Zhang, Yunlong He, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2017	28
7	Biodegradable and flexible artificial nociceptor based on Mg/MgO threshold switching memristor Science China Materials ·Yaxiong Cao, Saisai Wang, Rui Wang, Yuhan Xin, Yaqian Peng, Jing Sun, Mei Yang, Xiaohua Ma, Ling Lv, Hong Wang, Yue Hao	2023	25
8	Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions IEEE Transactions on Nuclear Science ·Ling Lv, Xiaohua Ma, Jincheng Zhang, Zhen Bi, Linyue Liu, Hengsheng Shan, Yue Hao	2015	24
9	High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si <inline-formula> <tex-math notation="LaTeX">$\delta$ </tex-math> </inline-formula>-Doped AlGaN/GaN:C HEMTs IEEE Transactions on Electron Devices ·Ling Yang, Meng Zhang, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Jiejie Zhu, Yang Lu, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2019	24
10	High linearity and high power performance with barrier layer of sandwich structure and Al_0.05GaN back barrier for X-band application Journal of Physics D Applied Physics ·Bin Hou, Ling Yang, Minhan Mi, Meng Zhang, Chupeng Yi, Mei Wu, Qing Zhu, Yang Lu, Jiejie Zhu, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2020	23
11	High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment IEEE Electron Device Letters ·Ling Yang, Bin Hou, Minhan Mi, Qing Zhu, Mei Wu, Jiejie Zhu, Yang Lu, Meng Zhang, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2018	21
12	Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes IEEE Transactions on Nuclear Science ·Ling Lv, Peixian Li, Xiaohua Ma, Linyue Liu, Ling Yang, Xiaowei Zhou, Jincheng Zhang, Yanrong Cao, Zhen Bi, Teng Jiang, Qing Zhu, Yue Hao	2016	20
13	Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice Applied Physics Letters ·Wei Zhang, Yue Zhang, JunShuai Xue, Ying Zhang, Ling Lv, Jincheng Zhang, Yue Hao	2011	16
14	Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs IEEE Transactions on Nuclear Science ·Pengfei Wan, Jianqun Yang, Gang Lv, Ling Lv, Shangli Dong, Weiqi Li, Xiaodong Xu, Chao Peng, Zhangang Zhang, Xingji Li	2021	16
15	Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure IEEE Transactions on Electron Devices ·Ling Yang, Minhan Mi, Bin Hou, Jiejie Zhu, Meng Zhang, Yunlong He, Yang Lu, Qing Zhu, Xiaowei Zhou, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao	2017	16
16	All‐in‐One Compression and Encryption Engine Based on Flexible Polyimide Memristor SHILAP Revista de lepidopterología ·Rui Wang, Saisai Wang, Yuhan Xin, Yaxiong Cao, Liang Yu, Yaqian Peng, Jie Feng, Yang Li, Ling Lv, Xiaohua Ma, Hong Wang, Yue Hao	2023	15
17	Significant Degradation of AlGaN/GaN High-Electron Mobility Transistors With Fast and Thermal Neutron Irradiation IEEE Transactions on Nuclear Science ·Ling Lv, Xiaoyao Yan, Yanrong Cao, Qing Zhu, Ling Yang, Xiaowei Zhou, Xiaohua Ma, Yue Hao	2019	13
18	Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs IEEE Journal of the Electron Devices Society ·Ling Yang, Hao Lu, Meng Zhang, Xuerui Niu, Chuzhou Shi, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Yang Lu, Ling Lv, Kai Cheng, Xiaohua Ma, Yue Hao	2022	13
19	Reduction of the rate retardation effect in bulk RAFT radical polymerization under an externally applied magnetic field Polymer Chemistry ·Ling Lv, Wenxuan Wu, Gang Zou, Qijin Zhang	2013	13
20	Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions IEEE Transactions on Nuclear Science ·Pengfei Wan, Jianqun Yang, Tao Ying, Gang Lv, Ling Lv, Shangli Dong, Lei Dong, Xueqiang Yu, Zhaofeng Zhen, Weiqi Li, Xingji Li	2021	13

About Ling Lv

Ling Lv is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 66 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (30 papers), Semiconductor materials and devices (24 papers), ZnO doping and properties (10 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor Quantum Structures and Devices (7 papers), Radio Frequency Integrated Circuit Design (7 papers) and Radiation Effects in Electronics (6 papers). The work is most often cited by research in Condensed Matter Physics (418 citations), Electronic, Optical and Magnetic Materials (274 citations), Electrical and Electronic Engineering (508 citations), Water Science and Technology (110 citations) and Nuclear Energy and Engineering (3 citations). Ling Lv has collaborated with scholars based in China, United Kingdom and United States. Frequent co-authors include Xiaohua Ma, Yue Hao, Yuan‐Ru Guo, Xingkui Guo, Kai Sun, Zhanhu Guo, Evan K. Wujcik, Yujie Fu, Sijie Guo and Tingting Wu. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Applied Physics Letters, IEEE Electron Device Letters and Journal of Applied Physics.

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