L. E. Vorobjev

953 citations

98 papers · 717 indexed · h-index 13

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
Spectroscopy top 5%
- Spectroscopy and Laser Applications

Papers in ⓘ

Atomic and Molecular Physics, and Optics 81
- Semiconductor Quantum Structures and Devices 77
- Quantum and electron transport phenomena 9
Spectroscopy 42
- Spectroscopy and Laser Applications 42

Co-authors: D. A. Firsov (85 shared papers)Gregory Belenky (13 shared papers)D. Donetsky (6 shared papers)Stefan P. Svensson (1 shared paper)A. N. Sofronov (34 shared papers)V. Yu. Panevin (37 shared papers)V. A. Shalygin (36 shared papers)E. L. Ivchenko (3 shared papers)
Journals: Semiconductor Science and Technology (7 papers)Superlattices and Microstructures (6 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (5 papers)Optical and Quantum Electronics (3 papers)
Partner nations: Russia Germany United States

In The Last Decade

L. E. Vorobjev

92 papers receiving 677 citations

Peers

Countries citing papers authored by L. E. Vorobjev

Since Specialization

Citations

This map shows the geographic impact of L. E. Vorobjev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. E. Vorobjev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. E. Vorobjev more than expected).

Fields of papers citing papers by L. E. Vorobjev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. E. Vorobjev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. E. Vorobjev. The network helps show where L. E. Vorobjev may publish in the future.

Co-authors

The 25 scholars most cited alongside L. E. Vorobjev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. E. Vorobjev Line = papers co-authored together L. E. Vorobjev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 98 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Applied Physics Letters ·D. Donetsky, Stefan P. Svensson, L. E. Vorobjev, Gregory Belenky	2009	126
2	Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells Applied Physics Letters ·Sergey Ganichev, Hermann Ketterl, W. Prettl, E. L. Ivchenko, L. E. Vorobjev	2000	76
3	Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure Journal of Applied Physics ·V. A. Shalygin, M. D. Moldavskaya, M. Ya. Vinnichenko, K. V. Maremyanin, A A Artemyev, V. Yu. Panevin, L. E. Vorobjev, D. A. Firsov, V. V. Korotyeyev, A. V. Sakharov, E. E. Zavarin, D S Arteev, W. V. Lundin, A. F. Tsatsul’nikov, Sami Suihkonen, Christoffer Kauppinen	2019	24
4	Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field Journal of Applied Physics ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, V. Yu. Panevin, A. N. Sofronov, G. A. Melentyev, А. В. Антонов, V. I. Gavrilenko, A. V. Andrianov, A. O. Zakharyin, Sami Suihkonen, P.T. Törmä, M. Ali, Harri Lipsanen	2009	21
5	Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field Journal of Applied Physics ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov	2011	20
6	Terahertz luminescence in strained GaAsN:Be layers under strong electric fields Applied Physics Letters ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, V. Yu. Panevin, A. N. Sofronov, A. V. Andrianov, A. O. Zakhar’in, A. Yu. Egorov, A. G. Gladyshev, О. В. Бондаренко, V. M. Ustinov, N. N. Zinov’ev, Д. В. Козлов	2007	18
7	Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation Journal of Applied Physics ·G A Melentev, V. A. Shalygin, L. E. Vorobjev, V. Yu. Panevin, D. A. Firsov, Lauri Riuttanen, Sami Suihkonen, V. V. Korotyeyev, Yu.M. Lyaschuk, V. A. Kochelap, V. N. Poroshin	2016	18
8	Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm Semiconductors ·A. V. Babichev, Adel Bousseksou, N. A. Pikhtin, I. S. Tarasov, E. V. Nikitina, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov	2016	17
9	Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping Semiconductors ·A. Yu. Egorov, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, E. V. Nikitina, Maria Tchernycheva, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev, N. A. Pikhtin, I. S. Tarasov	2015	15
10	Continuous wave operated 3.2 µm type-I quantum-well diode lasers with the quinary waveguide layer Semiconductor Science and Technology ·Gregory Belenky, L. Shterengas, D Wang, G. Kipshidze, L. E. Vorobjev	2009	14
11	Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment Nanomaterials ·H.A. Sarkisyan, David B. Hayrapetyan, Lyudvig S. Petrosyan, É. M. Kazaryan, A. N. Sofronov, R M Balagula, D. A. Firsov, L. E. Vorobjev, A. A. Tonkikh	2019	14
12	Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping Semiconductors ·D. A. Firsov, L. E. Vorobjev, V. Yu. Panevin, A. N. Sofronov, R M Balagula, Ivan Makhov, Д. В. Козлов, А. П. Васильев	2015	13
13	Optical Spin Orientation Under Inter- and Intra-Subband Transitions in QWs Journal of Superconductivity ·S. A. Tarasenko, E. L. Ivchenko, Vassilij Belkov, Sergey Ganichev, D. Schowalter, Petra Schneider, M. Sollinger, Wilhelm Prettl, V. M. Ustinov, A. E. Zhukov, L. E. Vorobjev	2003	13
14	A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots IEEE Journal of Quantum Electronics ·A. Kastalsky, L. E. Vorobjev, D. A. Firsov, V. L. Zerova, E. Towe	2001	11
15	<title>Toward far- and mid-IR intraband lasers based on hot carrier intervalley/real-space transfer in multiple quantum well systems</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·V. Ya. Aleshkin, Alexander A. Andronov, А. В. Антонов, Е. В. Демидов, А. А. Дубинов, V. I. Gavrilenko, D. G. Revin, Б. Н. Звонков, N. B. Zvonkov, E. A. Uskova, L. E. Vorobjev, D. A. Firsov, S. N. Danilov, Ilya E. Titkov, V. A. Shalygin, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov	2001	11
16	Lateral photoconductivity in structures with Ge/Si quantum dots Semiconductors ·V. Yu. Panevin, A. N. Sofronov, L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, M. Ya. Vinnichenko, R M Balagula, A. A. Tonkikh, P. Werner, B. Fuhrman, G. Schmidt	2013	10
17	Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs Physica E Low-dimensional Systems and Nanostructures ·Sergey Ganichev, S. N. Danilov, V. V. Bel’kov, E. L. Ivchenko, Hermann Ketterl, L. E. Vorobjev, M. Bichler, W. Wegscheider, W. Prettl	2001	10
18	Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots Superlattices and Microstructures ·A. N. Sofronov, L. E. Vorobjev, D. A. Firsov, V. Yu. Panevin, R M Balagula, P. Werner, A. A. Tonkikh	2015	10
19	Surface plasmon-phonon polaritons in GaAs Journal of Physics Conference Series ·G A Melentev, V. A. Shalygin, D. A. Firsov, M. Ya. Vinnichenko, L. E. Vorobjev	2017	9
20	Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels Physics of the Solid State ·V. F. Agekyan, Evgenii Borisov, L. E. Vorobjev, G. A. Melentyev, Henri Nykänen, Lauri Riuttanen, A. Yu. Serov, Sami Suihkonen, O. Svensk, N. G. Filisofov, V. A. Shalygin, L. A. Shelukhin	2015	9

About L. E. Vorobjev

L. E. Vorobjev is a scholar working on Atomic and Molecular Physics, and Optics, Spectroscopy, Electrical and Electronic Engineering, Acoustics and Ultrasonics and Condensed Matter Physics, having authored 98 papers that have together received 717 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (77 papers), Spectroscopy and Laser Applications (42 papers), Terahertz technology and applications (26 papers), Semiconductor Lasers and Optical Devices (21 papers), Advanced Semiconductor Detectors and Materials (15 papers), Silicon Nanostructures and Photoluminescence (11 papers), GaN-based semiconductor devices and materials (10 papers) and Quantum and electron transport phenomena (9 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (517 citations), Spectroscopy (170 citations), Condensed Matter Physics (106 citations), Electrical and Electronic Engineering (521 citations) and Materials Chemistry (141 citations). L. E. Vorobjev has collaborated with scholars based in Russia, Germany and United States. Frequent co-authors include D. A. Firsov, Gregory Belenky, D. Donetsky, Stefan P. Svensson, A. N. Sofronov, V. Yu. Panevin, V. A. Shalygin, E. L. Ivchenko, Sergey Ganichev and W. Prettl. Their work appears in journals such as Semiconductor Science and Technology, Superlattices and Microstructures, Applied Physics Letters, Journal of Applied Physics and Optical and Quantum Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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