L. Nattermann

467 total citations
20 papers, 368 citations indexed

About

L. Nattermann is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, L. Nattermann has authored 20 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 15 papers in Electrical and Electronic Engineering and 8 papers in Condensed Matter Physics. Recurrent topics in L. Nattermann's work include Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (7 papers) and GaN-based semiconductor devices and materials (6 papers). L. Nattermann is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (7 papers) and GaN-based semiconductor devices and materials (6 papers). L. Nattermann collaborates with scholars based in Germany, United Kingdom and Netherlands. L. Nattermann's co-authors include Kerstin Volz, W. Stolz, Peter Ludewig, Nikolai Knaub, Stephen J. Sweeney, K. Hild, S. R. Jin, Igor P. Marko, S. Reinhard and Sangam Chatterjee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

L. Nattermann

20 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Nattermann Germany 10 314 241 82 76 48 20 368
Alexander Sperl Germany 11 327 1.0× 249 1.0× 21 0.3× 115 1.5× 36 0.8× 18 415
Д. В. Дмитриев Russia 10 341 1.1× 195 0.8× 80 1.0× 120 1.6× 5 0.1× 67 421
Andrew Mounce United States 12 230 0.7× 148 0.6× 112 1.4× 127 1.7× 11 0.2× 37 403
D. Watanabe Japan 7 468 1.5× 120 0.5× 77 0.9× 146 1.9× 25 0.5× 11 508
A. Chernikov Germany 14 329 1.0× 342 1.4× 65 0.8× 205 2.7× 24 0.5× 29 516
S. G. Han United States 8 132 0.4× 74 0.3× 178 2.2× 58 0.8× 16 0.3× 14 328
J. G. Eden United States 13 225 0.7× 249 1.0× 15 0.2× 70 0.9× 126 2.6× 35 442
Nagaatsu Ogasawara Japan 15 402 1.3× 452 1.9× 23 0.3× 57 0.8× 37 0.8× 34 594
R. Schwabe Germany 12 387 1.2× 293 1.2× 108 1.3× 113 1.5× 19 0.4× 59 455
Sebastian F. Maehrlein United States 12 287 0.9× 439 1.8× 66 0.8× 330 4.3× 37 0.8× 20 608

Countries citing papers authored by L. Nattermann

Since Specialization
Citations

This map shows the geographic impact of L. Nattermann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Nattermann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Nattermann more than expected).

Fields of papers citing papers by L. Nattermann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Nattermann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Nattermann. The network helps show where L. Nattermann may publish in the future.

Co-authorship network of co-authors of L. Nattermann

This figure shows the co-authorship network connecting the top 25 collaborators of L. Nattermann. A scholar is included among the top collaborators of L. Nattermann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Nattermann. L. Nattermann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Broderick, Christopher A., L. Nattermann, Joseph L. Keddie, et al.. (2019). Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys. Scientific Reports. 9(1). 6835–6835. 11 indexed citations
2.
Nattermann, L., et al.. (2019). Decomposition Mechanisms of Di-tert-butylaminoarsane (DTBAA). Organometallics. 38(16). 3181–3186. 4 indexed citations
3.
Nattermann, L., et al.. (2018). Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry. Journal of Applied Physics. 123(4). 9 indexed citations
5.
Nattermann, L., et al.. (2018). An experimental approach for real time mass spectrometric CVD gas phase investigations. Scientific Reports. 8(1). 319–319. 10 indexed citations
6.
Nattermann, L., et al.. (2018). Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE. Applied Surface Science. 458. 512–516. 2 indexed citations
7.
Nattermann, L., K. Jandieri, Shashank Gupta, et al.. (2018). 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA). AIP Advances. 8(5). 9 indexed citations
8.
Nattermann, L., et al.. (2018). Structural and electronic properties of isovalent boron atoms in GaAs. Journal of Applied Physics. 123(16). 8 indexed citations
9.
Belz, Jürgen, Andreas Beyer, L. Nattermann, & Kerstin Volz. (2017). On The Effects of Column Occupancy and Static Atomic Disorder on the Analysis of Chemical Ordering in Ga(P(1-x)Bix) Compounds. Microscopy and Microanalysis. 23(S1). 1474–1475. 1 indexed citations
10.
Nattermann, L., et al.. (2017). (GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA). Journal of Crystal Growth. 467. 132–136. 12 indexed citations
11.
Nattermann, L., et al.. (2017). Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE. Journal of Crystal Growth. 470. 15–19. 9 indexed citations
12.
Nattermann, L., et al.. (2017). MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%. Journal of Crystal Growth. 463. 151–155. 8 indexed citations
13.
Beyer, Andreas, et al.. (2016). Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE. Journal of Crystal Growth. 454. 173–179. 2 indexed citations
14.
Nattermann, L., Peter Ludewig, Nikolai Knaub, et al.. (2016). MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications. Applied Materials Today. 5. 209–214. 13 indexed citations
15.
Beyer, Andreas, L. Nattermann, Ralf Tonner, et al.. (2016). Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA). Journal of Crystal Growth. 439. 19–27. 16 indexed citations
16.
Ludewig, Peter, L. Nattermann, W. Stolz, & Kerstin Volz. (2015). MOVPE growth mechanisms of dilute bismide III/V alloys. Semiconductor Science and Technology. 30(9). 94017–94017. 9 indexed citations
17.
Nattermann, L., et al.. (2015). MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors. Journal of Crystal Growth. 426. 54–60. 14 indexed citations
18.
Marko, Igor P., Peter Ludewig, S. R. Jin, et al.. (2014). Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. Journal of Physics D Applied Physics. 47(34). 345103–345103. 51 indexed citations
19.
Ludewig, Peter, et al.. (2014). Growth of Ga(AsBi) on GaAs by continuous flow MOVPE. Journal of Crystal Growth. 396. 95–99. 52 indexed citations
20.
Ludewig, Peter, Nikolai Knaub, N. Hossain, et al.. (2013). Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters. 102(24). 119 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026