L. C. Tran

523 total citations
13 papers, 368 citations indexed

About

L. C. Tran is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, L. C. Tran has authored 13 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 5 papers in Electronic, Optical and Magnetic Materials and 2 papers in Materials Chemistry. Recurrent topics in L. C. Tran's work include Semiconductor materials and devices (9 papers), Ferroelectric and Negative Capacitance Devices (4 papers) and Advanced Memory and Neural Computing (4 papers). L. C. Tran is often cited by papers focused on Semiconductor materials and devices (9 papers), Ferroelectric and Negative Capacitance Devices (4 papers) and Advanced Memory and Neural Computing (4 papers). L. C. Tran collaborates with scholars based in United States, Taiwan and Netherlands. L. C. Tran's co-authors include Y.J. Wang, Nick Yu, Chrong Jung Lin, Sangmo Kang, Xiaochun Zhu, Jonathan Chang, S. Natarajan, Yu-Der Chih, Ku-Feng Lin and Fu-Lung Hsueh and has published in prestigious journals such as IEEE Transactions on Electron Devices.

In The Last Decade

L. C. Tran

12 papers receiving 354 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. C. Tran United States 7 310 173 56 53 30 13 368
Nick Yu United States 5 301 1.0× 202 1.2× 50 0.9× 38 0.7× 30 1.0× 7 347
T. André United States 8 233 0.8× 202 1.2× 52 0.9× 30 0.6× 60 2.0× 14 309
Niladri Narayan Mojumder United States 10 397 1.3× 264 1.5× 62 1.1× 56 1.1× 41 1.4× 20 468
Y.J. Wang Taiwan 5 268 0.9× 163 0.9× 38 0.7× 30 0.6× 29 1.0× 8 307
Kon‐Woo Kwon South Korea 10 318 1.0× 237 1.4× 42 0.8× 45 0.8× 27 0.9× 30 384
Virgile Javerliac France 7 487 1.6× 372 2.2× 72 1.3× 70 1.3× 63 2.1× 10 572
Richard Dorrance United States 10 404 1.3× 183 1.1× 97 1.7× 82 1.5× 47 1.6× 25 515
Bi Wu China 14 422 1.4× 205 1.2× 81 1.4× 69 1.3× 40 1.3× 63 516
David M. Bromberg United States 11 283 0.9× 140 0.8× 30 0.5× 13 0.2× 30 1.0× 23 352

Countries citing papers authored by L. C. Tran

Since Specialization
Citations

This map shows the geographic impact of L. C. Tran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Tran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Tran more than expected).

Fields of papers citing papers by L. C. Tran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Tran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Tran. The network helps show where L. C. Tran may publish in the future.

Co-authorship network of co-authors of L. C. Tran

This figure shows the co-authorship network connecting the top 25 collaborators of L. C. Tran. A scholar is included among the top collaborators of L. C. Tran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. C. Tran. L. C. Tran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Tran, L. C., et al.. (2025). Are Edge MicroDCs Equipped to Tackle Memory Contention?. 38–44.
2.
Lin, Ku-Feng, et al.. (2013). Cycling endurance optimization scheme for 1Mb STT-MRAM in 40nm technology. 224–225. 35 indexed citations
3.
4.
Chiang, Wen‐Jen, K. C. Tzeng, Kevin Huang, et al.. (2011). A high-performance low-power highly manufacturable embedded DRAM technology using backend hi-k MIM capacitor at 40nm node and beyond. 1–2. 3 indexed citations
5.
6.
Attenborough, K., G.A.M. Hurkx, Romain Delhougne, et al.. (2010). Phase change memory line concept for embedded memory applications. 29.2.1–29.2.4. 7 indexed citations
7.
Lin, Chrong Jung, Sangmo Kang, Y.J. Wang, et al.. (2009). 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell. 1–4. 257 indexed citations
8.
9.
Busch, B., et al.. (2004). A 78nm 6F/sup 2/ DRAM technology for multigigabit densities. 28–29. 6 indexed citations
10.
Busch, B., et al.. (2004). A 78nm 6F DRAM Technology for Multigigabit Densities. 6 indexed citations
11.
Tran, L. C.. (2004). Challenges of DRAM and flash scaling - potentials in advanced emerging memory devices. 668–672 vol.1. 5 indexed citations
12.
Tran, L. C., et al.. (1993). Development of polysilicon TFTs for 16 MB SRAMs and beyond. IEEE Transactions on Electron Devices. 40(11). 2125–2126. 3 indexed citations
13.
Mondal, Kalyan, et al.. (1985). A programmable digital signal processor with 32b floating point arithmetic. 92–93. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026