Katsufusa Shohno

457 total citations
28 papers, 336 citations indexed

About

Katsufusa Shohno is a scholar working on Materials Chemistry, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Katsufusa Shohno has authored 28 papers receiving a total of 336 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Materials Chemistry, 12 papers in Atomic and Molecular Physics, and Optics and 12 papers in Electrical and Electronic Engineering. Recurrent topics in Katsufusa Shohno's work include Boron and Carbon Nanomaterials Research (13 papers), Semiconductor materials and interfaces (9 papers) and MXene and MAX Phase Materials (7 papers). Katsufusa Shohno is often cited by papers focused on Boron and Carbon Nanomaterials Research (13 papers), Semiconductor materials and interfaces (9 papers) and MXene and MAX Phase Materials (7 papers). Katsufusa Shohno collaborates with scholars based in Japan, United States and Netherlands. Katsufusa Shohno's co-authors include Makoto Hirayama, Yasuo Kanai, M. Takigawa, T. Nakada, Yutaka Hirai, J. Bloem, Hideyuki Ohtake, Akiyoshi Suzuki and Yoshio Oka and has published in prestigious journals such as Journal of The Electrochemical Society, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Katsufusa Shohno

27 papers receiving 309 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Katsufusa Shohno Japan 11 248 137 119 63 33 28 336
V. J. Silvestri United States 11 114 0.5× 185 1.4× 93 0.8× 19 0.3× 35 1.1× 28 287
G. Quintana Argentina 10 159 0.6× 283 2.1× 90 0.8× 45 0.7× 51 1.5× 17 364
R. Bisaro France 9 222 0.9× 268 2.0× 95 0.8× 36 0.6× 54 1.6× 27 366
P. D. Richard United States 6 215 0.9× 284 2.1× 34 0.3× 64 1.0× 34 1.0× 8 337
L. Żdanowicz Poland 11 204 0.8× 158 1.2× 196 1.6× 13 0.2× 23 0.7× 26 335
Seiji Shinoyama Japan 12 129 0.5× 299 2.2× 177 1.5× 13 0.2× 34 1.0× 21 370
A. D. Stewart United Kingdom 8 316 1.3× 246 1.8× 34 0.3× 96 1.5× 17 0.5× 17 361
E. I. Salkovitz United States 10 137 0.6× 71 0.5× 109 0.9× 35 0.6× 20 0.6× 24 305
E. M. Griswold Canada 11 190 0.8× 168 1.2× 147 1.2× 37 0.6× 111 3.4× 22 335
Kun‐An Chiu Taiwan 9 131 0.5× 299 2.2× 83 0.7× 39 0.6× 21 0.6× 31 351

Countries citing papers authored by Katsufusa Shohno

Since Specialization
Citations

This map shows the geographic impact of Katsufusa Shohno's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Katsufusa Shohno with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Katsufusa Shohno more than expected).

Fields of papers citing papers by Katsufusa Shohno

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Katsufusa Shohno. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Katsufusa Shohno. The network helps show where Katsufusa Shohno may publish in the future.

Co-authorship network of co-authors of Katsufusa Shohno

This figure shows the co-authorship network connecting the top 25 collaborators of Katsufusa Shohno. A scholar is included among the top collaborators of Katsufusa Shohno based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Katsufusa Shohno. Katsufusa Shohno is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shohno, Katsufusa, et al.. (1980). Boron Diffusion into Si from CVD‐BN Covered with Si3 N 4 and Application to Master Slice p‐MOS IC. Journal of The Electrochemical Society. 127(7). 1546–1550. 7 indexed citations
2.
Shohno, Katsufusa, et al.. (1978). 47-Stage P-MOS Ring Oscillator Circuit Using the Two-Photomask Fabrication Process. Japanese Journal of Applied Physics. 17(6). 1133–1134. 1 indexed citations
3.
Shohno, Katsufusa, Hideyuki Ohtake, & J. Bloem. (1978). Crystal growth of boron monophosphide using a B2H6-PH3-H2 system. Journal of Crystal Growth. 45. 187–191. 9 indexed citations
4.
Suzuki, Akiyoshi, et al.. (1977). Free Boron Monophosphide Wafers. Japanese Journal of Applied Physics. 16(6). 1053–1054. 4 indexed citations
5.
Shohno, Katsufusa, et al.. (1977). Boron monophosphide on Si and device applications. 490–493. 1 indexed citations
6.
Shohno, Katsufusa, et al.. (1977). Hardness of Epitaxially Grown Rhombohedral Boron Phosphide. Japanese Journal of Applied Physics. 16(4). 637–638. 2 indexed citations
7.
Hirai, Yutaka & Katsufusa Shohno. (1977). Crystalline properties of BP epitaxially grown on Si substrates using B2H6-PH3-H2 system. Journal of Crystal Growth. 41(1). 124–132. 11 indexed citations
8.
Shohno, Katsufusa, et al.. (1976). Hardness of Boron Monophosphide. Japanese Journal of Applied Physics. 15(11). 2235–2236. 11 indexed citations
9.
Shohno, Katsufusa, et al.. (1976). Dielectric Constant and Refractive Index of Boron Monophosphide. Japanese Journal of Applied Physics. 15(10). 2021–2022. 13 indexed citations
10.
Shohno, Katsufusa, et al.. (1975). Boron Monophosphide and Some of Its Electrical Properties. Japanese Journal of Applied Physics. 14(4). 579–580. 10 indexed citations
11.
Hirayama, Makoto & Katsufusa Shohno. (1975). CVD‐BN for Boron Diffusion in Si and Its Application to Si Devices. Journal of The Electrochemical Society. 122(12). 1671–1676. 46 indexed citations
12.
Shohno, Katsufusa, M. Takigawa, & T. Nakada. (1974). Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system. Journal of Crystal Growth. 24-25. 193–196. 47 indexed citations
13.
Hirayama, Makoto, et al.. (1974). Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B2H6-PH3-H2System. Japanese Journal of Applied Physics. 13(3). 411–416. 25 indexed citations
14.
Shohno, Katsufusa, et al.. (1974). Double-Layer Epitaxial Growth of Si and B13P2on Si Substrates and Some Electrical Properties of Si Layers. Japanese Journal of Applied Physics. 13(8). 1211–1215. 4 indexed citations
15.
Hirayama, Makoto & Katsufusa Shohno. (1973). Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH3-B2H6-H2System. Japanese Journal of Applied Physics. 12(12). 1960–1961. 11 indexed citations
16.
Shohno, Katsufusa. (1966). Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes. Japanese Journal of Applied Physics. 5(5). 358–358. 4 indexed citations
17.
Shohno, Katsufusa. (1966). Gate Controlled Si PIN-Structure. Japanese Journal of Applied Physics. 5(5). 414–414. 2 indexed citations
18.
Shohno, Katsufusa. (1965). Current Voltage Characteristics and Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes. Japanese Journal of Applied Physics. 4(2). 114–114. 6 indexed citations
19.
Shohno, Katsufusa. (1965). Current Oscillations in the Forward Direction of Si PIN-Diodes. Japanese Journal of Applied Physics. 4(9). 699–699. 3 indexed citations
20.
Kanai, Yasuo & Katsufusa Shohno. (1963). Dielectric Constant of PbTe. Japanese Journal of Applied Physics. 2(1). 6–6. 56 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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