Karl Hofmann

645 total citations
29 papers, 422 citations indexed

About

Karl Hofmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Karl Hofmann has authored 29 papers receiving a total of 422 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in Karl Hofmann's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Karl Hofmann is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Karl Hofmann collaborates with scholars based in Germany, United States and Brazil. Karl Hofmann's co-authors include Tobias Wietler, Björn Fischer, P. Nguyen, G. Paasch, E. Bugiel, Robby Peibst, Udo Römer, Jan Krügener, Nils‐Peter Harder and Bianca Lim and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Access.

In The Last Decade

Karl Hofmann

27 papers receiving 409 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Karl Hofmann Germany 12 379 122 60 31 25 29 422
Shuu’ichirou Yamamoto Japan 10 307 0.8× 126 1.0× 65 1.1× 36 1.2× 14 0.6× 40 381
H. Aikawa Japan 11 177 0.5× 150 1.2× 31 0.5× 20 0.6× 23 0.9× 36 318
C. Claeys Belgium 10 397 1.0× 39 0.3× 20 0.3× 62 2.0× 6 0.2× 14 440
D. Moy United States 11 372 1.0× 88 0.7× 27 0.5× 38 1.2× 47 1.9× 31 395
D. Petre Romania 7 115 0.3× 33 0.3× 112 1.9× 20 0.6× 5 0.2× 16 158
Martin von Haartman Sweden 12 479 1.3× 78 0.6× 66 1.1× 91 2.9× 14 0.6× 27 521
M. Inuishi Japan 13 539 1.4× 75 0.6× 31 0.5× 32 1.0× 64 2.6× 77 556
Toshihiro Sekigawa Japan 9 339 0.9× 34 0.3× 46 0.8× 40 1.3× 39 1.6× 48 353
D. Gogl Germany 9 268 0.7× 152 1.2× 48 0.8× 31 1.0× 16 0.6× 13 328
J.Y.-C. Sun Taiwan 10 646 1.7× 133 1.1× 55 0.9× 121 3.9× 21 0.8× 28 666

Countries citing papers authored by Karl Hofmann

Since Specialization
Citations

This map shows the geographic impact of Karl Hofmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karl Hofmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karl Hofmann more than expected).

Fields of papers citing papers by Karl Hofmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karl Hofmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karl Hofmann. The network helps show where Karl Hofmann may publish in the future.

Co-authorship network of co-authors of Karl Hofmann

This figure shows the co-authorship network connecting the top 25 collaborators of Karl Hofmann. A scholar is included among the top collaborators of Karl Hofmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Karl Hofmann. Karl Hofmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wiefels, Stefan, et al.. (2023). Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory. physica status solidi (a). 221(22). 11 indexed citations
2.
Wiefels, Stefan, et al.. (2023). RESET Kinetics of 28 nm Integrated ReRAM. 1–4. 1 indexed citations
3.
Wiefels, Stefan, et al.. (2022). Endurance of 2 Mbit Based BEOL Integrated ReRAM. IEEE Access. 10. 122696–122705. 11 indexed citations
4.
Hofmann, Karl, et al.. (2014). Comprehensive statistical investigation of STT-MRAM thermal stability. 1–2. 8 indexed citations
5.
6.
Hofmann, Karl, et al.. (2011). A method to analyze the impact of fast-recovering NBTI degradation on the stability of large-scale SRAM arrays. Solid-State Electronics. 65-66. 191–196. 3 indexed citations
7.
Tempel, G., et al.. (2011). Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells. IEEE Transactions on Electron Devices. 58(3). 819–825. 1 indexed citations
8.
Hofmann, Karl, et al.. (2010). Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays. 146–149. 8 indexed citations
9.
Fischer, Thomas, et al.. (2009). Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation. 92–95. 7 indexed citations
10.
Arnim, K. von, K. Schruefer, Thomas Baumann, et al.. (2009). A voltage scaling model for performance evaluation in digital CMOS circuits. 1–4.
11.
Fischer, Thomas, et al.. (2008). A 65nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors. 51–54. 24 indexed citations
12.
Wietler, Tobias, E. Bugiel, & Karl Hofmann. (2006). Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates. Materials Science in Semiconductor Processing. 9(4-5). 659–663. 8 indexed citations
13.
Hofmann, Karl, et al.. (2005). Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxides. Microelectronic Engineering. 80. 444–447. 2 indexed citations
14.
Wietler, Tobias, et al.. (2004). Advances in surfactant-mediated growth of germanium on silicon: high-quality p-type Ge films on Si. Materials Science in Semiconductor Processing. 8(1-3). 73–77. 15 indexed citations
15.
Nguyen, P., Karl Hofmann, & G. Paasch. (2003). Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates. Journal of Applied Physics. 94(1). 375–386. 46 indexed citations
16.
Nguyen, P., Karl Hofmann, & G. Paasch. (2002). Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis. Journal of Applied Physics. 92(9). 5359–5370. 7 indexed citations
17.
18.
Fischer, Björn & Karl Hofmann. (2000). A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon. Applied Physics Letters. 76(5). 583–585. 29 indexed citations
19.
Kammler, M., et al.. (1997). High Electron Mobilities in Surfactant-Grown Germanium on Silicon Substrates. Japanese Journal of Applied Physics. 36(8B). L1082–L1082. 10 indexed citations
20.
Hofmann, Karl. (1991). Charge Control in SiGe Quantum-Well MOSFETs and MODFETs. MRS Proceedings. 220. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Rankless by CCL
2026