J.L. Bischoff

2.3k total citations
83 papers, 2.0k citations indexed

About

J.L. Bischoff is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, J.L. Bischoff has authored 83 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 26 papers in Surfaces, Coatings and Films. Recurrent topics in J.L. Bischoff's work include Semiconductor materials and devices (59 papers), Electron and X-Ray Spectroscopy Techniques (23 papers) and Silicon Carbide Semiconductor Technologies (18 papers). J.L. Bischoff is often cited by papers focused on Semiconductor materials and devices (59 papers), Electron and X-Ray Spectroscopy Techniques (23 papers) and Silicon Carbide Semiconductor Technologies (18 papers). J.L. Bischoff collaborates with scholars based in France, Switzerland and Spain. J.L. Bischoff's co-authors include L. K�ubler, D. Bolmont, Robert J. Rosenbauer, F. Lutz, B. Kolb, Didier Dentel, Mustapha Diani, K. L. Von Damm, Dominique Aubel and Laurent Simon and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J.L. Bischoff

82 papers receiving 1.9k citations

Peers

J.L. Bischoff

EEE

AMPO

GEOPH

Ding Pan China

Yuki Kimura Japan

Lukáš Vlček United States

W. T. Elam United States

M. W. Williams United States

Paula P. Provencio United States

G. J. Foran Australia

J. Pelous France

Milan Předota Czechia

Maureen I. McCarthy United States

Ding Pan China

J.L. Bischoff

638 ×0.6

EEE

741 ×1.1

377 ×0.7

AMPO

123 ×0.4

256 ×0.9

GEOPH

Citations per year, relative to J.L. Bischoff J.L. Bischoff (= 1×) peers Ding Pan

Countries citing papers authored by J.L. Bischoff

Since Specialization

Citations

This map shows the geographic impact of J.L. Bischoff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Bischoff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Bischoff more than expected).

Fields of papers citing papers by J.L. Bischoff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Bischoff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Bischoff. The network helps show where J.L. Bischoff may publish in the future.

Co-authorship network of co-authors of J.L. Bischoff

This figure shows the co-authorship network connecting the top 25 collaborators of J.L. Bischoff. A scholar is included among the top collaborators of J.L. Bischoff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.L. Bischoff. J.L. Bischoff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bischoff, J.L., Hussein Mortada, Didier Dentel, et al.. (2012). Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO₃(001) substrate. physica status solidi (a). 209(4). 657–662. 3 indexed citations

Aït−Mansour, Kamel, et al.. (2005). Ge epitaxial island growth on a graphitized C-rich 4H-SiC(0001) surface. Journal of Crystal Growth. 275(1-2). e2275–e2280. 3 indexed citations

Aït−Mansour, Kamel, L. K�ubler, Mustapha Diani, et al.. (2004). A structural parallel between Ge- and Si-induced 4×4 and 3×3 reconstructions on SiC(0001) drawn from comparative RHEED oscillations. Surface Science. 565(1). 57–69. 5 indexed citations

Aït−Mansour, Kamel, Didier Dentel, L. K�ubler, et al.. (2004). Epitaxy relationships between Ge-islands and SiC(0001). Applied Surface Science. 241(3-4). 403–411. 5 indexed citations

Simon, Laurent, P. Louis, C. Pirri, et al.. (2003). Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth. Journal of Crystal Growth. 256(1-2). 1–6. 4 indexed citations

Rosenbauer, Robert J., et al.. (2001). An Experimental Approach to CO 2 Sequestration in Saline Aquifers: Application to Paradox Valley, CO. AGU Fall Meeting Abstracts. 2001. 11 indexed citations

Simon, Laurent, M. Stoffel, Philippe Sonnet, et al.. (2001). Atomic structure of carbon-inducedSi(001)c(4×4)reconstruction as a Si-Si homodimer and C-Si heterodimer network. Physical review. B, Condensed matter. 64(3). 38 indexed citations

Stoffel, M., Laurent Simon, J.L. Bischoff, Dominique Aubel, & L. K�ubler. (2000). MBE Si regrowth on carbon-induced Si(001)-c(4×4) reconstructions studied by RHEED. Thin Solid Films. 380(1-2). 259–262. 6 indexed citations

Romeo, Michelangelo, J.P. Deville, J. Werckmann, et al.. (1998). HRTEM study of strained Si/Ge multilayers. Thin Solid Films. 319(1-2). 168–171. 2 indexed citations

10.

Bischoff, J.L., Didier Dentel, & L. K�ubler. (1998). 6H-SiC{0001} X-ray photoelectron diffraction characterization used for polarity determination. Surface Science. 415(3). 392–402. 17 indexed citations

11.

Simon, Laurent, et al.. (1997). A C 1s core level x-ray photoelectron diffraction characterization of substitutional carbon in epitaxial Si1−yCy alloys grown on Si(111) and Si(001). Journal of Applied Physics. 81(6). 2635–2642. 13 indexed citations

12.

Aubel, Dominique, L. K�ubler, J.L. Bischoff, Laurent Simon, & D. Bolmont. (1996). X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001). Applied Surface Science. 99(2). 169–183. 10 indexed citations

13.

Simon, Laurent, L. K�ubler, J.L. Bischoff, et al.. (1996). Epitaxial growth ofSi1−yCyalloys characterized as self-organized, ordered, nanometer-sized C-rich aggregates in monocrystalline Si. Physical review. B, Condensed matter. 54(15). 10559–10564. 22 indexed citations

14.

Diani, Mustapha, A. Mesli, L. K�ubler, et al.. (1995). Observation of Si out-diffusion related defects in SiC growth on Si(001). Materials Science and Engineering B. 29(1-3). 110–113. 11 indexed citations

15.

Diani, Mustapha, Azzam N. Mansour, L. K�ubler, J.L. Bischoff, & D. Bolmont. (1994). Reply to the comment on “Search for carbon nitride CNx compounds with a high nitrogen content by electron cyclotron resonance plasma deposition”, Diamond relat. mater., 3 (1994) 264–269. Diamond and Related Materials. 3(10). 1279–1279. 1 indexed citations

16.

Diani, Mustapha, J.L. Bischoff, L. K�ubler, & D. Bolmont. (1993). X-ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxy on Si (001) 2×1. Journal of Applied Physics. 73(11). 7412–7415. 7 indexed citations

17.

Diani, Mustapha, J.L. Bischoff, L. K�ubler, & D. Bolmont. (1993). X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001). Applied Surface Science. 68(4). 575–582. 20 indexed citations

18.

Lutz, F., J.L. Bischoff, L. K�ubler, & D. Bolmont. (1993). An X-ray photoelectron spectroscopy study of the thermal oxidation and nitridation of Si(100)-2 × 1 by NO2. Applied Surface Science. 72(4). 427–433. 7 indexed citations

19.

K�ubler, L., F. Lutz, J.L. Bischoff, & D. Bolmont. (1990). Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2. Vacuum. 41(4-6). 1124–1127. 3 indexed citations

20.

Bischoff, J.L., L. K�ubler, & D. Bolmont. (1989). Comparative photoemission study of the adsorption ofNO2,N2O, andNH3ona-Si surfaces at low temperature. Physical review. B, Condensed matter. 39(6). 3653–3658. 15 indexed citations

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