J.C. Hsieh

477 citations

26 papers · 373 indexed · h-index 9

Co-authors: Albert Chin Chyong‐Huey Lai K.T. Chan Y.K. Fang E. Quévy Roger T. Howe David Elata N. S. Tsai
Topics: Semiconductor materials and devices (17 papers)Advancements in Semiconductor Devices and Circuit Design (12 papers)Integrated Circuits and Semiconductor Failure Analysis (5 papers)
Cited by: Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics Journal of Physics D Applied Physics
Partner nations: Taiwan United States China

In The Last Decade

J.C. Hsieh

26 papers receiving 355 citations

Peers

Countries citing papers authored by J.C. Hsieh

Since Specialization

Citations

This map shows the geographic impact of J.C. Hsieh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.C. Hsieh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.C. Hsieh more than expected).

Fields of papers citing papers by J.C. Hsieh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.C. Hsieh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.C. Hsieh. The network helps show where J.C. Hsieh may publish in the future.

Co-authorship network of co-authors of J.C. Hsieh

This figure shows the co-authorship network connecting the top 25 collaborators of J.C. Hsieh. A scholar is included among the top collaborators of J.C. Hsieh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.C. Hsieh. J.C. Hsieh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Nondestructive, quantitative viability analysis of 3D tissue cultures using machine learning image segmentation 2024 ·APL Bioengineering ·(unknown),J.C. Hsieh,Weikun Xiao,Jerry Lee,Andrea M. Armani	3
2	Fully Differential Internal Electrostatic Transduction of a Lamé-Mode Resonator 2009 ·(unknown),David Elata,J.C. Hsieh,(unknown),E. Quévy,Roger T. Howe	22
3	Higher-order mode internal electrostatic transduction of a bulk-mode ring resonator on a quartz substrate 2009 ·TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference ·(unknown),J.C. Hsieh,(unknown),E. Quévy,David Elata,Roger T. Howe	8
4	Origins of flash lamp annealing induced p–n junction leakages in a 45 nm p-MOSFET with strained SiGe source/drain 2009 ·Journal of Physics D Applied Physics ·(unknown),Y.K. Fang,J.C. Hsieh,(unknown),Shiwei Lin,(unknown),(unknown),Yu‐Miin Sheu	1
5	Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors 2008 ·Applied Physics Letters ·Ching‐Yang Cheng,Y.K. Fang,J.C. Hsieh,(unknown),(unknown),Shiwei Lin,(unknown)	6
6	Investigation and Localization of the SiGe Source/Drain (S/D) Strain-Induced Defects in PMOSFET With 45-nm CMOS Technology 2007 ·IEEE Electron Device Letters ·(unknown),Y.K. Fang,J.C. Hsieh,(unknown),Yu‐Miin Sheu,(unknown),(unknown),Shiwei Lin	27
7	Dynamics analysis of a single-stage isolated high power factor converter with a magnetic switch 2005 ·IEE Proceedings - Electric Power Applications ·Jong‐Liang Lin,J.C. Hsieh,Tsung‐Heng Tsai	4
8	RF MIM capacitors using high-K Al/sub 2/O/sub 3/ and AlTiO/sub x/ dielectrics 2003 ·(unknown),Chyong‐Huey Lai,Albert Chin,J.C. Hsieh,(unknown)	15
9	Predicting hyperkalemia by a two-staged artificial neural network 2003 ·Ming‐Feng Wu,Jen‐Huai Chiang,(unknown),(unknown),(unknown),(unknown),J.C. Hsieh	4
10	40-GHz coplanar waveguide bandpass filters on silicon substrate 2002 ·IEEE Microwave and Wireless Components Letters ·K.T. Chan,(unknown),Albert Chin,J.C. Hsieh,(unknown),(unknown),Wuu‐Jyh Lin	33
11	High-density MIM capacitors using Al₂O₃ and AlTiO_x dielectrics 2002 ·IEEE Electron Device Letters ·(unknown),Chyong‐Huey Lai,Albert Chin,J.C. Hsieh,(unknown)	153
12	Frequency-dependent capacitance reduction in high-k AlTiO<sub>x</sub> and Al<sub>2</sub>O<sub>3</sub> gate dielectrics from IF to RF frequency range 2002 ·IEEE Electron Device Letters ·(unknown),Chyong‐Huey Lai,K.T. Chan,Albert Chin,J.C. Hsieh,(unknown)	40
13	High performance concrete in Washington state SR 18/SR 516 overcrossing : interim report on girder monitoring 2000 ·Rosa P: A digital library for transportation research (United States Department of Transportation) ·Paul Barr,(unknown),Marc O. Eberhard,John F. Stanton,(unknown),J.C. Hsieh	4
14	Extra interface state generation enhanced by fluorine in tungsten-polycided metal-oxide-semiconductor devices with nitrided oxide gate dielectric 1995 ·Applied Physics Letters ·C. W. Chen,Y.K. Fang,(unknown),J.C. Hsieh,M.S. Liang	1
15	The origins of the performance degradation of implanted p/sup +/ polysilicon gated p-channel MOSFET with/without rapid thermal annealing 1994 ·IEEE Transactions on Electron Devices ·J.C. Hsieh,Y.K. Fang,(unknown),N. S. Tsai,(unknown),(unknown)	5
16	The anomalous threshold voltage shift of N- and P-MOSFET under flow and reflow of BPSG film with RTA and/or furnace 1994 ·IEEE Transactions on Electron Devices ·J.C. Hsieh,Y.K. Fang,(unknown),N. S. Tsai,(unknown),(unknown)	2
17	Effect of rapid thermal annealing on gate induced drain leakage in a n-channel metal-oxide-semiconductor field effect transistor 1993 ·Applied Physics Letters ·J.C. Hsieh,Y.K. Fang,(unknown),N. S. Tsai,(unknown),(unknown)	1
18	Study and improvement of anomalous interface states of metal-oxide-semiconductor structures induced by rapid thermal post-oxide annealing 1993 ·Journal of Applied Physics ·J.C. Hsieh,Y.K. Fang,C. W. Chen,N. S. Tsai,(unknown),(unknown)	12
19	Characteristics of MOS capacitors of BF/sub 2/ or B implanted polysilicon gate with and without POCl/sub 3/ co-doped 1993 ·IEEE Electron Device Letters ·J.C. Hsieh,Y.K. Fang,(unknown),N. S. Tsai,(unknown),(unknown)	6
20	Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor structure in n+ polycrystalline silicon gate complementary metal-oxide-semiconductor technology 1992 ·Applied Physics Letters ·Y.K. Fang,J.C. Hsieh,C. W. Chen,(unknown),N. S. Tsai,(unknown),(unknown)	4

About J.C. Hsieh

J.C. Hsieh is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Biophysics, having authored 26 papers that have together received 373 indexed citations. Recurring topics across this work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (354 citations), Electronic, Optical and Magnetic Materials (56 citations) and Materials Chemistry (88 citations). J.C. Hsieh has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include Albert Chin, Chyong‐Huey Lai, K.T. Chan, Y.K. Fang, E. Quévy, Roger T. Howe, David Elata, N. S. Tsai, Wuu‐Jyh Lin and Yu‐Miin Sheu. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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