J. Huran

1.2k total citations
88 papers, 1.1k citations indexed

About

J. Huran is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Huran has authored 88 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 30 papers in Materials Chemistry and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Huran's work include Thin-Film Transistor Technologies (33 papers), Silicon Carbide Semiconductor Technologies (21 papers) and Semiconductor materials and devices (18 papers). J. Huran is often cited by papers focused on Thin-Film Transistor Technologies (33 papers), Silicon Carbide Semiconductor Technologies (21 papers) and Semiconductor materials and devices (18 papers). J. Huran collaborates with scholars based in Slovakia, Russia and Poland. J. Huran's co-authors include I. Hotový, Lothar Spieß, V. Řeháček, Š. Haščı́k, Pietro Siciliano, S. Capone, A.P. Kobzev, Ján Janík, A.P. Kobzev and V. N. Padalko and has published in prestigious journals such as Journal of Materials Science, Sensors and Actuators B Chemical and Applied Surface Science.

In The Last Decade

J. Huran

79 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Huran Slovakia 15 657 569 495 135 126 88 1.1k
R.K. Puri India 19 293 0.4× 224 0.4× 238 0.5× 76 0.6× 65 0.5× 57 886
Yang Zhao China 18 412 0.6× 692 1.2× 134 0.3× 344 2.5× 64 0.5× 122 1.1k
M. D. Migahed Egypt 15 231 0.4× 284 0.5× 395 0.8× 92 0.7× 59 0.5× 53 834
T. Whitcher Singapore 14 392 0.6× 444 0.8× 108 0.2× 101 0.7× 20 0.2× 27 743
Yan Cheng China 20 723 1.1× 629 1.1× 126 0.3× 128 0.9× 66 0.5× 66 1.1k
G. de M. Azevedo Brazil 21 373 0.6× 526 0.9× 72 0.1× 233 1.7× 128 1.0× 61 1.1k
J. N. Huiberts Netherlands 15 656 1.0× 929 1.6× 437 0.9× 152 1.1× 30 0.2× 16 1.8k
J. Darville Belgium 13 681 1.0× 787 1.4× 155 0.3× 107 0.8× 20 0.2× 28 1.1k
E.N. Galashov Russia 17 494 0.8× 853 1.5× 48 0.1× 177 1.3× 242 1.9× 29 1.1k
C. Sénémaud France 18 572 0.9× 657 1.2× 68 0.1× 88 0.7× 221 1.8× 82 1.1k

Countries citing papers authored by J. Huran

Since Specialization
Citations

This map shows the geographic impact of J. Huran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Huran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Huran more than expected).

Fields of papers citing papers by J. Huran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Huran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Huran. The network helps show where J. Huran may publish in the future.

Co-authorship network of co-authors of J. Huran

This figure shows the co-authorship network connecting the top 25 collaborators of J. Huran. A scholar is included among the top collaborators of J. Huran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Huran. J. Huran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mikolášek, Miroslav, et al.. (2019). Amorphous silicon PEC-PV hybrid structure for photo-electrochemical water splitting. Journal of Electrical Engineering. 70(7). 107–111. 4 indexed citations
2.
Potemkin, A. K., et al.. (2017). Electron gun with a transmission photocathode for the Joint Institute for Nuclear Research photoinjector. Physics-Uspekhi. 60(10). 1051–1058. 1 indexed citations
3.
Huran, J., et al.. (2017). HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology. Integrated ferroelectrics. 184(1). 23–31. 1 indexed citations
4.
Bystritsky, V. M., G. N. Dudkin, A. R. Krylov, et al.. (2016). A method for investigation of the D(4He, γ)6Li reaction in the Ultralow energy region under a high background. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 825. 24–30. 3 indexed citations
5.
Bystritsky, V. M., Š. Gaži, J. Huran, et al.. (2015). Studying the D(p, γ)3He reaction in zirconium deuteride within the proton energy range of 9–35 keV. Physics of Particles and Nuclei Letters. 12(4). 550–558. 4 indexed citations
6.
Bystritsky, V. M., M. Filipowicz, Š. Gaži, et al.. (2014). First experimental evidence of D(p, γ)3He reaction in titanium deuteride in ultralow collision energy region. Journal of Experimental and Theoretical Physics. 119(1). 54–62. 4 indexed citations
7.
Huran, J., et al.. (2014). Transmission photocathodes based on stainless steel mesh coated with deuterated diamond like carbon films. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 753. 14–18. 2 indexed citations
8.
Dudkin, G. N., M. Filipowicz, Š. Gaži, et al.. (2014). Experimental verification of hypothesis of dd reaction enhancement by channeling of deuterons in titanium deuteride at ultralow energies. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 764. 42–47. 11 indexed citations
9.
Bystritsky, V. M., A.P. Kobzev, A. R. Krylov, et al.. (2013). Study of the d(p, γ)3He reaction at ultralow energies using a zirconium deuteride target. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 737. 248–252. 14 indexed citations
10.
Huran, J., et al.. (2013). Optimalization of Amorphous Silicon Carbide Thin Films for Heterojunction Solar Cells. EU PVSEC. 1915–1918. 2 indexed citations
11.
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13.
Chromík, Š., J. Huran, V. Štrbı́k, et al.. (2006). Nanogranular MgB2thin films on SiC buffered Si substrates prepared by anin situmethod. Superconductor Science and Technology. 19(6). 577–580. 15 indexed citations
14.
Hotový, I., et al.. (2006). NiO-based nanostructured thin films with Pt surface modification for gas detection. Thin Solid Films. 515(2). 658–661. 31 indexed citations
15.
16.
Hotový, I., J. Huran, & Lothar Spieß. (2004). Characterization of sputtered NiO films using XRD and AFM. Journal of Materials Science. 39(7). 2609–2612. 53 indexed citations
17.
Huran, J., et al.. (2002). Properties of amorphous SiC thin films prepared by plasma enhanced chemical vapour deposition. 49. 249–252. 1 indexed citations
18.
Huran, J., et al.. (2002). Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD. Vacuum. 67(3-4). 567–570. 5 indexed citations
19.
Hotový, I., et al.. (1998). Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability. Vacuum. 50(3-4). 403–406. 2 indexed citations
20.
Haščı́k, Š., et al.. (1991). Plasma etching of deep Si-trenches with CBrF 3 and dilutions.. 41(2). 122–127.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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