J. G. Broerman

637 total citations
30 papers, 465 citations indexed

About

J. G. Broerman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. G. Broerman has authored 30 papers receiving a total of 465 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 12 papers in Materials Chemistry. Recurrent topics in J. G. Broerman's work include Advanced Semiconductor Detectors and Materials (14 papers), Semiconductor Quantum Structures and Devices (13 papers) and Chalcogenide Semiconductor Thin Films (10 papers). J. G. Broerman is often cited by papers focused on Advanced Semiconductor Detectors and Materials (14 papers), Semiconductor Quantum Structures and Devices (13 papers) and Chalcogenide Semiconductor Thin Films (10 papers). J. G. Broerman collaborates with scholars based in United States. J. G. Broerman's co-authors include Charles R. Whitsett, S. L. Lehoczky, C. J. Summers, D. J. Leopold, D. J. Peterman, K. N. Pathak, M. Cardona, Fred H. Pollak, B. J. Feldman and J. M. Ballingall and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. G. Broerman

30 papers receiving 438 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. G. Broerman United States 13 345 328 196 28 20 30 465
R. Granger France 11 314 0.9× 229 0.7× 118 0.6× 16 0.6× 18 0.9× 48 361
R. R. Saxena United States 11 292 0.8× 253 0.8× 124 0.6× 28 1.0× 14 0.7× 19 387
P. E. Greene United States 6 226 0.7× 249 0.8× 104 0.5× 36 1.3× 27 1.4× 7 346
Steven Groves United States 6 286 0.8× 356 1.1× 127 0.6× 47 1.7× 13 0.7× 6 459
Charles R. Whitsett United States 10 189 0.5× 154 0.5× 140 0.7× 25 0.9× 15 0.8× 12 303
B. M. Askerov Azerbaijan 6 134 0.4× 219 0.7× 201 1.0× 59 2.1× 26 1.3× 23 380
M. Baudet France 12 337 1.0× 463 1.4× 151 0.8× 57 2.0× 8 0.4× 25 526
W. D. Lawson India 8 329 1.0× 166 0.5× 156 0.8× 8 0.3× 22 1.1× 12 409
T. Kusunoki Japan 15 459 1.3× 410 1.3× 160 0.8× 27 1.0× 18 0.9× 34 551
Charles C. Robinson United States 10 201 0.6× 161 0.5× 131 0.7× 21 0.8× 11 0.6× 15 366

Countries citing papers authored by J. G. Broerman

Since Specialization
Citations

This map shows the geographic impact of J. G. Broerman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. G. Broerman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. G. Broerman more than expected).

Fields of papers citing papers by J. G. Broerman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. G. Broerman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. G. Broerman. The network helps show where J. G. Broerman may publish in the future.

Co-authorship network of co-authors of J. G. Broerman

This figure shows the co-authorship network connecting the top 25 collaborators of J. G. Broerman. A scholar is included among the top collaborators of J. G. Broerman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. G. Broerman. J. G. Broerman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Peterman, D. J., et al.. (1989). Controlled p-type impurity doping of HgTe-CdTe superlattices during molecular-beam-epitaxial growth. Journal of Applied Physics. 65(4). 1550–1553. 5 indexed citations
2.
Peterman, D. J., et al.. (1988). Controlled p‐type impurity doping of Hg1−xCdxTe during growth by molecular‐beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(4). 2826–2829. 12 indexed citations
3.
Ballingall, J. M., et al.. (1986). HgTe-CdTe superlattices grown on GaAs (100) oriented substrates by molecular beam epitaxy. Applied Physics Letters. 49(14). 871–873. 8 indexed citations
4.
Leopold, D. J., J. M. Ballingall, D. J. Peterman, et al.. (1986). HgTe–CdTe superlattices grown on lattice-mismatched GaAs substrates. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(6). 1306–1309. 11 indexed citations
5.
Broerman, J. G., et al.. (1981). Theory of surface polaritons in a polar zero-gap semiconductor. Physical review. B, Condensed matter. 24(4). 2018–2024. 3 indexed citations
6.
Broerman, J. G.. (1981). Dielectric Response of a Thin-Layer Zero-Gap Semiconductor. Physical Review Letters. 46(14). 958–958. 3 indexed citations
7.
Summers, C. J. & J. G. Broerman. (1980). Optical absorption inHg1xCdxSealloys. Physical review. B, Condensed matter. 21(2). 559–573. 32 indexed citations
8.
Broerman, J. G.. (1980). Dielectric Response of a Thin-Layer Zero-Gap Semiconductor. Physical Review Letters. 45(9). 747–750. 5 indexed citations
9.
Lehoczky, S. L., et al.. (1974). Temperature-dependent electrical properties of HgSe. Physical review. B, Solid state. 9(4). 1598–1620. 82 indexed citations
10.
Whitsett, Charles R., et al.. (1973). Lattice Thermal Conductivity of Mercury Selenide. Physical review. B, Solid state. 7(10). 4625–4640. 21 indexed citations
11.
Broerman, J. G.. (1972). Random-Phase-Approximation Dielectric Function ofa-Sn in the Far Infrared. Physical review. B, Solid state. 5(2). 397–408. 24 indexed citations
12.
Broerman, J. G., et al.. (1971). Effect ofp32Intraband Polarization on the Mobility of Zero-Gap Semiconductors. Physical review. B, Solid state. 4(2). 664–667. 21 indexed citations
13.
Broerman, J. G.. (1971). A conjecture on the anomalous mobility of α-Sn. Journal of Physics and Chemistry of Solids. 32(6). 1263–1267. 8 indexed citations
14.
Broerman, J. G.. (1970). Temperature Dependence of the Static Dielectric Constant of a Symmetry-Induced Zero-Gap Semiconductor. Physical Review Letters. 25(24). 1658–1660. 21 indexed citations
15.
Broerman, J. G.. (1970). Ionized-Impurity-Limited Mobility ofα-Sn in the Random-Phase Approximation. Physical review. B, Solid state. 1(12). 4568–4572. 26 indexed citations
16.
Broerman, J. G.. (1970). Anomalous Mobility and Dielectric Singularity ofα-Sn. Physical Review Letters. 24(9). 450–451. 18 indexed citations
17.
Broerman, J. G.. (1970). Evidence for a Dielectric Singularity in HgSe and HgTe. Physical review. B, Solid state. 2(6). 1818–1821. 22 indexed citations
18.
Broerman, J. G.. (1969). Ionized-Impurity-Limited Mobility and the Band Structure of Mercuric Selenide. Physical Review. 183(3). 754–757. 30 indexed citations
19.
Broerman, J. G.. (1968). Nonlinear background-to-signal coupling in lateral photoeffects. IEEE Transactions on Electron Devices. 15(11). 860–864. 3 indexed citations
20.
Cardona, M., Fred H. Pollak, & J. G. Broerman. (1965). Band structure of gallium arsenide: Spin-orbit splitting. Physics Letters. 19(4). 276–277. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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