Ignasi Fina

5.8k total citations · 1 hit paper
127 papers, 4.3k citations indexed

About

Ignasi Fina is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Ignasi Fina has authored 127 papers receiving a total of 4.3k indexed citations (citations by other indexed papers that have themselves been cited), including 110 papers in Materials Chemistry, 71 papers in Electronic, Optical and Magnetic Materials and 60 papers in Electrical and Electronic Engineering. Recurrent topics in Ignasi Fina's work include Ferroelectric and Piezoelectric Materials (69 papers), Multiferroics and related materials (63 papers) and Ferroelectric and Negative Capacitance Devices (47 papers). Ignasi Fina is often cited by papers focused on Ferroelectric and Piezoelectric Materials (69 papers), Multiferroics and related materials (63 papers) and Ferroelectric and Negative Capacitance Devices (47 papers). Ignasi Fina collaborates with scholars based in Spain, France and United States. Ignasi Fina's co-authors include F. Sánchez, J. Fontcuberta, X. Martí, Jaume Gàzquez, N. Dix, Saúl Estandía, Jike Lyu, L. Fàbrega, Huan Tan and T. Jungwirth and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Angewandte Chemie International Edition.

In The Last Decade

Ignasi Fina

124 papers receiving 4.2k citations

Hit Papers

Room-temperature antiferromagnetic memory resistor 2014 2026 2018 2022 2014 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Room-temperature antiferromagnetic memory resistor
    2014 535 citations Ignasi Fina, J. Fontcuberta et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ignasi Fina Spain 34 3.0k 2.1k 1.9k 785 658 127 4.3k
Daisuke Kan Japan 33 3.4k 1.1× 3.0k 1.5× 992 0.5× 481 0.6× 1.2k 1.8× 119 4.4k
Young Jun Chang South Korea 28 2.5k 0.8× 1.2k 0.6× 1.2k 0.6× 528 0.7× 531 0.8× 115 3.1k
Zhigao Sheng China 30 1.8k 0.6× 1.9k 0.9× 854 0.4× 372 0.5× 636 1.0× 140 3.0k
Yurong Yang China 28 1.8k 0.6× 1.2k 0.6× 802 0.4× 412 0.5× 340 0.5× 111 2.4k
Maël Guennou Luxembourg 26 2.0k 0.7× 1.4k 0.7× 1.0k 0.5× 297 0.4× 427 0.6× 70 2.6k
Darshana Wickramaratne United States 25 2.5k 0.8× 561 0.3× 1.5k 0.8× 516 0.7× 445 0.7× 82 3.0k
Jae‐Young Leem South Korea 26 2.0k 0.7× 736 0.4× 1.7k 0.9× 640 0.8× 287 0.4× 243 2.6k
Zhongqiang Hu China 30 2.3k 0.8× 1.9k 0.9× 1.2k 0.6× 573 0.7× 240 0.4× 198 3.5k
Ren‐Kui Zheng China 28 1.9k 0.6× 1.2k 0.6× 892 0.5× 232 0.3× 419 0.6× 154 2.5k
Craig J. Fennie United States 37 4.9k 1.6× 4.6k 2.2× 1.8k 0.9× 567 0.7× 1.9k 2.8× 78 6.8k

Countries citing papers authored by Ignasi Fina

Since Specialization
Citations

This map shows the geographic impact of Ignasi Fina's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ignasi Fina with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ignasi Fina more than expected).

Fields of papers citing papers by Ignasi Fina

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ignasi Fina. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ignasi Fina. The network helps show where Ignasi Fina may publish in the future.

Co-authorship network of co-authors of Ignasi Fina

This figure shows the co-authorship network connecting the top 25 collaborators of Ignasi Fina. A scholar is included among the top collaborators of Ignasi Fina based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ignasi Fina. Ignasi Fina is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ochoa, Diego A., Enric Menéndez, Jesús López‐Sánchez, et al.. (2024). Reversible optical control of magnetism in engineered artificial multiferroics. Nanoscale. 16(9). 4900–4908. 3 indexed citations
2.
Fina, Ignasi, et al.. (2023). Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films. Materials Today Physics. 34. 101064–101064. 21 indexed citations
3.
Tan, Huan, Tingfeng Song, N. Dix, F. Sánchez, & Ignasi Fina. (2023). Vector piezoelectric response and ferroelectric domain formation in Hf0.5Zr0.5O2 films. Journal of Materials Chemistry C. 11(22). 7219–7226. 9 indexed citations
4.
Tan, Huan, Saúl Estandía, F. Sánchez, & Ignasi Fina. (2023). Effects of Doping, Stress, and Thickness on the Piezoelectric Response and Its Relation with Polarization in Ferroelectric HfO2. ACS Applied Electronic Materials. 5(12). 6630–6639. 3 indexed citations
5.
Song, Tingfeng, et al.. (2023). Highly Stable Epitaxially Crystallized Ferroelectric Hf0.5Zr0.5O2 Films. ACS Applied Electronic Materials. 5(11). 6142–6148. 2 indexed citations
6.
Song, Tingfeng, Saúl Estandía, Ignasi Fina, & F. Sánchez. (2022). Ferroelectric (Hf,Zr,La)O2 films. Applied Materials Today. 29. 101661–101661. 13 indexed citations
7.
Quintana, Alberto, et al.. (2022). Voltage-driven strain-mediated modulation of exchange bias in Ir20Mn80/Fe80Ga20/Ta/⟨011⟩-oriented PMN-32PT heterostructures. Applied Physics Letters. 120(14). 5 indexed citations
8.
Турченко, В. А., Ignasi Fina, В. В. Коровушкин, et al.. (2022). Microscopic Mechanism of Ferroelectric Properties in Barium Hexaferrites. SSRN Electronic Journal. 2 indexed citations
9.
Song, Tingfeng, F. Sánchez, & Ignasi Fina. (2022). Impact of non-ferroelectric phases on switching dynamics in epitaxial ferroelectric Hf0.5Zr0.5O2 films. APL Materials. 10(3). 17 indexed citations
10.
Sambri, A., F. Miletto Granozio, Ignasi Fina, et al.. (2022). Optical Second-Harmonic Polarimetry on Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 Interfaces. ACS Applied Electronic Materials. 4(4). 2040–2046.
11.
Song, Tingfeng, Romain Bachelet, Guillaume Saint‐Girons, et al.. (2021). Thickness effect on the ferroelectric properties of La-doped HfO2 epitaxial films down to 4.5 nm. Journal of Materials Chemistry C. 9(36). 12224–12230. 30 indexed citations
12.
Estandía, Saúl, Jaume Gàzquez, M. Varela, et al.. (2021). Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf0.5Zr0.5O2thin films. Journal of Materials Chemistry C. 9(10). 3486–3492. 36 indexed citations
13.
Tan, Huan, Saúl Estandía, Jaume Gàzquez, et al.. (2021). Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions. ACS Applied Electronic Materials. 3(8). 3657–3666. 45 indexed citations
14.
Estandía, Saúl, N. Dix, Matthew F. Chisholm, Ignasi Fina, & F. Sánchez. (2020). Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001). Crystal Growth & Design. 20(6). 3801–3806. 78 indexed citations
15.
Fina, Ignasi, et al.. (2020). Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2. Applied Physics Letters. 117(14). 18 indexed citations
16.
Fina, Ignasi, N. Dix, Enric Menéndez, et al.. (2020). Flexible Antiferromagnetic FeRh Tapes as Memory Elements. ACS Applied Materials & Interfaces. 12(13). 15389–15395. 14 indexed citations
17.
Estandía, Saúl, Xiao Long, Jike Lyu, et al.. (2019). Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions. Advanced Electronic Materials. 6(1). 52 indexed citations
18.
Estandía, Saúl, N. Dix, Jaume Gàzquez, et al.. (2019). Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress. ACS Applied Electronic Materials. 1(8). 1449–1457. 147 indexed citations
19.
Lyu, Jike, et al.. (2018). Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films. Applied Physics Letters. 113(8). 90 indexed citations
20.
Lyu, Jike, et al.. (2018). Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon. CrystEngComm. 20(40). 6225–6229. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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